Search Results (362)

To investigate the synthesis route and electromagnetic wave absorption performance of SiC nanowires (SiC-NWs), boron was simultaneously employed as both a catalyst and a dopant, and the doped nanowires were embedded into a silicone matrix to fabricate SiC-NW/silicone composites with enhanced mechanical properties and microwave attenuation. Boric acid significantly increased the yield of SiC-NWs, while boron doping enhanced both conductive and relaxation losses. The subsequent nanowire pull-out mechanism improved the tensile strength of the composites by 185%, reaching 5.7 MPa at a filler loading of 5 wt%. The three-dimensional SiC-NW network provided synergistic dielectric and conductive losses, along with good impedance matching, achieving a minimum reflection loss of −35 dB at a thickness of 3.5 mm and an effective absorption bandwidth of 4.2 GHz within the 8.2–12.4 GHz range, with a nanowire content of only 5 wt%. Full article

More and more chemosensors and biosensors are turning to electronic transistors, as they are ideal transducers, precise in current response, miniaturized in size and capable of providing sub-picomolar detection limits. Among these devices, ISFET transistors—Ion-Sensitive Field-Effect Transistors—have the capacity of integrating ion-sensitive layers together with field effect transistors of ultimate generations. Recent studies have indicated that nanoporous materials deposited or grown within the transistor gate space offer a dual advantage—a favorable environment for an optimal capture of liquid state receptors through capillary effects, but also of direct anchoring of these nanoporous structures on a Si wafer. This article aims to review the constructive evolutions of ISFET transistors, along with some newer nanowire devices, as well as their co-integration techniques with nanoporous materials, which are beneficial in the optimization of many chemosensors but of enzymatic biosensors in particular. Full article

In this study we report on the structural, mechanical, and electrical characterization of different structures of vertically aligned zinc oxide (ZnO) nanowires (NWs) synthesized using hydrothermal methods. By optimizing the growth conditions, scanning electron microscopy (SEM) micrographs show that the ZnO NWs could reach an astounding 51.9 ± 0.82 µm in length, 0.7 ± 0.08 µm in diameter, and 3.3 ± 2.1 µm⁻² density of the number of NWs per area within 24 h of growth time, compared with a reported value of ~26.8 µm in length for the same period. The indentation modulus of the as-grown ZnO NWs was determined using contact resonance (CR) measurements using atomic force microscopy (AFM). An indentation modulus of 122.2 ± 2.3 GPa for the NW array sample with an average diameter of ~690 nm was found to be close to the reference bulk ZnO value of 125 GPa. Furthermore, the measurement of the piezoelectric coefficient (d₃₃) using the traceable ESPY33 tool under cyclic compressive stress gave a value of 1.6 ± 0.4 pC/N at 0.02 N with ZnO NWs of 100 ± 10 nm and 2.69 ± 0.05 µm in diameter and length, respectively, which were embedded in an S1818 polymer. Current–voltage (I-V) measurements of the ZnO NWs fabricated on an n-type silicon (Si) substrate utilizing a micromanipulator integrated with a tungsten (W) probe exhibits Ohmic behavior, revealing an important phenomenon which can be attributed to the generated electric field by the tungsten probe, dielectric residue, or conductive material. Full article

This study reports the development of a highly sensitive electrochemical sensor for phosphate ion detection, utilizing silicon nanowires (SiNWs) as the transducing elements and a novel copper (II) phthalocyanine-acrylate polymer adduct (Cu (II) Pc-PAA) as the functional sensing layer. Silicon nanowires were fabricated via metal-assisted chemical etching (MACE) with etching durations of 15, 25, 35, 45, and 60 min. The SiNWs etched for 15 min exhibited the highest sensitivity, showing superior electrochemical performance. Functionalized SiNWs were systematically evaluated for phosphate ion (HPO₄²⁻) detection over a wide concentration range (10⁻¹⁰ to 10⁻⁶ M) using Mott–Schottky measurements. The surface morphology of the SiNWs was thoroughly characterized before and after Cu (II) Pc-PAA layer functionalization. The sensing material was analyzed using contact angle goniometry and scanning electron microscopy (SEM), confirming both its uniform distribution and effective immobilization. The sensor displayed a Nernstian behavior with a sensitivity of 28.25 mV/Decade and an exceptionally low limit of detection (LOD) of 1.5 nM. Furthermore, the capacitive sensor exhibited remarkable selectivity toward phosphate ions, even in the presence of potentially interfering anions such as Cl⁻, NO₃⁻, SO₄²⁻ and ClO₄⁻. These results confirm the sensor’s high sensitivity, selectivity, and fast response, underscoring its suitability for environmental phosphate ion monitoring. Full article

Transparent conductive aluminum-doped zinc oxide (AZO) films were investigated as potential recombination layers for perovskite/silicon tandem solar cells, comparing the results of atomic layer deposition (ALD) and magnetron sputtering (MS) on vertically aligned silicon nanowire (SiNW) scaffolds. Conformality and thickness control were examined by cross-sectional SEM/TEM and profilometry, revealing fully conformal ALD coatings with tunable thicknesses (40–120 nm) versus tip-capped, semi-uniform MS films (100–120 nm). Optical transmission measurements on glass substrates showed that both 120 nm ALD and MS layers exhibit interference maxima near 450–500 nm and 72–89% transmission across 800–1200 nm; the thinnest ALD films reached up to 86% near-IR transparency. Four-point probe analysis demonstrated that ALD reduces surface resistance from 1150 Ω/□ at 40 nm to 245 Ω/□ at 120 nm, while MS layers achieved 317 Ω/□ at 120 nm. These results delineate the balance between conformality, transparency, and conductivity, providing design guidelines for AZO recombination interfaces in next-generation tandem photovoltaics. Full article

Epitaxial growth of β-Ga₂O₃ nanowires on silicon substrates was realized by the low-pressure chemical vapor deposition (LPCVD) method. The as-grown Si/Ga₂O₃ heterojunctions were employed in the Underwater DUV detection. It is found that the carrier type as well as the carrier concentration of the silicon substrate significantly affect the performance of the Si/Ga₂O₃ heterojunction. The p-Si/β-Ga₂O₃ (2.68 × 10¹⁵ cm⁻³) devices exhibit a responsivity of up to 205.1 mA/W, which is twice the performance of the devices on the n-type substrate (responsivity of 93.69 mA/W). Moreover, the devices’ performance is enhanced with the increase in the carrier concentration of the p-type silicon substrates; the corresponding device on the high carrier concentration substrate (6.48 × 10¹⁷ cm⁻³) achieves a superior responsivity of 845.3 mA/W. The performance enhancement is mainly attributed to the built-in electric field at the p-Si/n-Ga₂O₃ heterojunction and the reduction in the Schottky barrier under high carrier concentration. These findings would provide a strategy for optimizing carrier transport and interface engineering in solar-blind UV photodetectors, advancing the practical use of high-performance solar-blind photodetectors for underwater application. Full article

The study of the processes of low-temperature synthesis of one-dimensional particles, which are the basis for two- and three-dimensional structures, is relevant for materials science. The modified metal-stimulated electrochemical etching method made it possible to synthesize silicon nanowires with an average thickness of about 292.6 nm. Scanning electron microscopy has shown the formation of nanowires, flower-like structures, and clusters of matter after the deposition of zinc oxide on the porous surface. The hexagonal structure of ZnO crystallites was determined by X-ray diffraction spectroscopy. Studies of the initial sample by electron paramagnetic resonance (EPR) spectroscopy revealed a narrow signal in the center of the spectrum. The subtraction of the EPR spectra with a sequential increase in microwave power up to 8 mW shows the absence of saturation of the signal. This indicates an almost free flow of charges through the surface nanostructures under the influence of an external field. Heat treatment in an air atmosphere at 300 °C caused a significant increase in the intensity of the EPR spectrum. This led to an increase in the intensity of charge transfer through paramagnetic centers. Full article

The synthesis and characterization of MgO-ZrO₂ heterostructures are examined in this work. To promote the creation of nanowires, the Si substrate is first covered with a catalyst layer of various Au thicknesses. Sputtering is used to achieve this deposition. After that, chemical vapor deposition (CVD) with a Au catalyst layer is used to create MgO nanowire arrays on the silicon substrate. Second, MgO/ZrO₂ Core–shell Nanowire Arrays are created by applying ZrO₂ layers to the surface of MgO nanowires of different diameters using chemical vapor deposition (CVD) procedures. The presence of both magnesium oxide (MgO) and zirconium dioxide (ZrO₂) in their oxidized forms was shown by the detailed characterization of the MgO-ZrO₂ core–shell nanowire samples utilizing a variety of methods. Phase formation, mechanical homogeneity, optical characteristics, and topographical structure and roughness were all thoroughly examined at various stresses. MgO hardness values ranged from 1.4 to 3.2 GPa, whereas MgO-ZrO₂ ranged from 0.38 to 1.2 GPa. The I–V parameter study was a further step in the examination of the heterostructure’s electrical properties. The structural, morphological, optical, mechanical, and electrical properties of the MgO-ZrO₂ heterostructure were all thoroughly described using these techniques. Full article

With the rapid advancement of artificial intelligence and machine learning technologies, the demand for enhanced device computing capabilities has significantly increased. Neuromorphic computing, an emerging computational paradigm inspired by the human brain, has garnered growing attention as a promising research frontier. Inspired by the human brain’s functionality, this technology mimics the behavior of neurons and synapses to enable efficient, low-power computing. Unlike conventional digital systems, this approach offers a potentially superior alternative. This article delves into the application of nanowire materials (and devices) in neuromorphic computing simulations: First, it introduces the synthesis and preparation methods of nanowire materials. Then, it analyzes in detail the key role of nanowire devices in constructing artificial neural networks, especially their advantages in simulating the functions of neurons and synapses. Compared with traditional silicon-based material devices, it focuses on how nanowire devices can achieve higher connection density and lower energy consumption, thereby enabling new types of neuromorphic computing. Finally, it looks forward to the application potential of nanowire devices in the field of future neuromorphic computing, expecting them to become a key force in promoting the development of intelligent computing, with extensive application prospects in the fields of informatics and medicine. Full article

This paper reports the field emission (FE) current stability of a diamond nanowire (DNW) array. Assembled with a silicon anode with a 1.03 μm gap, the FE properties, as well as the current stability of the DNW cathode, were systematically evaluated in a vacuum test system under different vacuum degrees, current densities, and atmospheres. Experiments demonstrate that lower pressure and current density can improve FE properties and current stability. In addition, compared to air and compressed air, DNWs exhibit higher FE properties and current stability in N₂. DNWs achieve a remarkably low turn-on field of 1.65 V/μm and a high current density of 265.38 mA/cm². Notably, they demonstrate merely 0.70% current fluctuation under test conditions of 1.2 × 10⁻⁴ Pa and 0.1 mA/cm². Additionally, based on the Fowler–Nordheim theory, the change in work function after gas adsorption was analyzed, and the noise generation mechanism was derived from the noise power spectrum. The current exponent is determined as 1.94, while the frequency exponent ranges from 0.92 to 1.32, confirming that the dominant noise mechanism in DNWs arises from surface work function fluctuations due to the adsorption and desorption of residual gas. Full article

Silicon-based materials provide a new pathway to break through the energy storage limits of battery systems but their industrialization process is still constrained by inherent diffusion hysteresis and unstable electrode structures. In this work, we propose a novel structural design strategy employing a modified spray freeze drying technique to construct multidimensional carbon nanostructures. The continuous morphological transition from carbon nanowires to carbon nanosheets was facilitated by the inducement of ultralow-temperature phase separation and the effect of polymer self-assembly. The unique wrinkled carbon nanosheet encapsulation effectively mitigated the stress concentration induced by the aggregation of silicon nanoparticles, while the open two-dimensional structure buffered the volume changes of silicon. As expected, the SSC-5M composite retained a reversible capacity of 1279 mAh g⁻¹ after 100 cycles at 0.2 C (1 C = 1700 mAh g⁻¹) and exhibited a capacity retention of 677.1 mAh g⁻¹ after 400 cycles at 1 C, demonstrating excellent cycling stability. This study offers a new strategy for the development of silicon-based energy storage devices. Full article

In situ-grown SiC nanowires (SiCnws) on SiC porous material (SiCnws@SiC) were prepared using sol–gel and carbothermal reduction methods, which substantially improves the electromagnetic wave absorption property of composite material. The crystallinity and purity of SiCnws are the best when the sintering temperature is 1600 °C. When the ratio of the carbon source (C) to the silicon source (Si) is 1:1, SiCnws@SiC composite exhibits excellent electromagnetic wave absorption performance, the minimum reflection loss is −56.95 dB at a thickness of 2.30 mm, and the effective absorption bandwidth covers 1.85 GHz. The optimal effective absorption bandwidth is 4.01 GHz when the thickness is 2.59 mm. The enhancement of the electromagnetic wave absorption performance of SiCnws is mainly attributed to the increase in the heterogeneous interface and multiple reflection and scattering caused by the network structure, increasing dielectric loss and conduction loss. In addition, defects could occur during the growth of SiCnws, which could become the center of dipole polarization and increase the polarization loss of composite materials. Therefore, in situ growth of SiCnws on SiC porous ceramics is a promising method to improve electromagnetic wave absorption. Full article

This paper reviews various design approaches for sensing schemes that utilize silicon nanowire (SiNW) ion-sensitive field-effect transistors (ISFETs) for pH-sensing applications. SiNW ISFETs offer advantageous characteristics, including a high surface-to-volume ratio, fast response time, and suitability for integration with complementary metal oxide semiconductor (CMOS) technology. This review focuses on SiNW ISFET-based biosensors in three key aspects: (1) major fabrication processes and device structures; (2) theoretical analysis of key performance parameters in readout circuits such as sensitivity, linearity, noise immunity, and output range in different system configurations; and (3) an overview of existing readout circuits with quantitative evaluations of N-type and P-type current-mirror-based circuits, highlighting their strengths and limitations. Finally, this paper proposes a modified N-type readout scheme integrating an operational amplifier with a negative feedback network to overcome the low sensitivity of conventional N-type circuits. This design enhances gain control, linearity, and noise immunity while maintaining stability. These advancements are expected to contribute to the advancement of the current state-of-the-art SiNW ISFET-based readout circuits. Full article

Solar-blind ultraviolet photodetectors are gaining attention for their high signal-to-noise ratio and strong anti-interference capabilities. With the rising demand for applications in high-strain environments, such as fire rescue robots and smart firefighting suits, a flexible photodetector that maintains stable performance under bending strain is needed. Current devices struggle to balance strain cycle stability and responsivity. This paper presents a β-Ga₂O₃ nanowire photodetector on a flexible ultra-thin silicon substrate, fabricated using microchannel engraving and chemical vapor deposition. The device achieves a responsivity of 266 mA W⁻¹ without strain, with less than 5.5% variation in photogenerated current under bending strain (0–60°), and a response time of 360 ms. After 500 cycles of 60° bending, the photogenerated current changes by only 1.5%, demonstrating excellent stability and responsivity, with broad application potential in flame detection and biological sensing. Full article

Typical wet-chemical methods for the preparation of silica nanowires use polyvinylpyrrolidone and n-pentanol. This study presents a polyethylene glycol-based emulsion template method for the synthesis of SiO₂ nanowires (SiO₂NWs) in isopropanol. By systematically optimizing key parameters (type of solvent, polyethylene glycol molecular weight and dosage, dosage of sodium citrate, ammonium and tetraethyl orthosilicate, incubation temperature and time), SiO₂NWs with diameters about 530 nm were obtained. Replacing polyvinylpyrrolidone with polyethylene glycol enabled anisotropic growth in isopropanol, overcoming the dependency on traditional solvents like n-pentanol. Scale-up experiments (10× volume) demonstrated robust reproducibility, yielding nanowires with consistent morphology (~580 nm diameter). After calcination at 500 °C for 1 h, the morphology of the nanowires did not change significantly. Full article