Search Results (28)

Thermal detectors, owing to their broadband spectral response and ambient operating temperature capabilities, represent a key technological avenue for surpassing the inherent limitations of traditional photon detectors. A fundamental trade-off exists between the thermal properties and the response performance of conventional thermosensitive materials (e.g., vanadium oxide and amorphous silicon), significantly hindering the simultaneous enhancement of device sensitivity and response speed. Recently, low-dimensional materials, with their atomically thin thickness leading to ultralow thermal capacitance and tunable thermoelectric properties, have emerged as a promising perspective for addressing these bottlenecks. Integrating low-dimensional materials with metasurfaces enables the utilization of subwavelength periodic configurations and localized electromagnetic field enhancements. This not only overcomes the limitation of low light absorption efficiency in thermal detectors based on low-dimensional materials (TDLMs) but also imparts full Stokes polarization detection capability, thus offering a paradigm shift towards multidimensional light field sensing. This review systematically elucidates the working principle and device architecture of TDLMs. Subsequently, it reviews recent research advancements in this field, delving into the unique advantages of metasurface design in terms of light localization and interfacial heat transfer optimization. Furthermore, it summarizes the cutting-edge applications of TDLMs in wideband communication, flexible sensing, and multidimensional photodetection. Finally, it analyzes the major challenges confronting TDLMs and provides an outlook on their future development prospects. Full article

The energy transported by the electric current that circulates a thermoelectric element (TE) varies with position due to the Joule and Thomson effects. The Thomson effect may enhance or compensate the Joule effect. A method for measuring the Thomson coefficient of a TE is presented. This method is based on the total compensation of the Joule and Thomson effects. The electric current then flows without delivering power to the TE or absorbing power from it. For a TE, the global Thomson/Joule compensation ratio ${\overline{\Phi }}_{\mathrm{T}/\mathrm{J}}$ is defined as the ratio of the power absorbed by the current due to the Thomson effect and the power delivered by the current to the TE due to the Joule effect. It can be expressed as ${\overline{\Phi }}_{\mathrm{T}/\mathrm{J}}=I_0/I$, where I is the electric current and $I_0$ is the zero-power current, a quantity that is proportional to the average Thomson coefficient. When $I=I_0$, the Thomson effect exactly compensates the Joule effect and the net power delivered by the current to the TE is zero. Since the power delivered by the current is related to the temperature distribution, temperature measurements for currents around $I_0$ can be used as the basis for a measurement technique of the Thomson coefficient. With varying current, the difference between the temperature at the center of the TE and the mean temperature between its extremes reverses its sign at the zero-power current, $I=I_0$. This observation suggests the possibility of measuring the Thomson coefficient, but a quantitative analysis is needed. With calculations using the constant transport coefficients model for ${\mathrm{B}\mathrm{i}}_2{\left({\mathrm{T}\mathrm{e}}_{0.94}{\mathrm{S}\mathrm{e}}_{0.06}\right)}_{3 }$ and ${{\left({\mathrm{B}\mathrm{i}}_{0.25}{\mathrm{S}\mathrm{b}}_{0.75}\right)}_2\mathrm{T}\mathrm{e}}_3$, it is theoretically shown that a null temperature detector with a sensitivity of the order of 1 mK allows for the accurate determination of the Thomson coefficient. Full article

With the widespread application of infrared thermal imagers in various fields, the demand for thermal imagers and their performance parameter testing equipment has increased significantly. There are particularly high demands on the detection accuracy of minimum resolvable temperature difference (MRTD) testers. Traditional MRTD testers have an issue with the four-bar target temperatures being easily affected by the external environment, resulting in non-uniform temperatures and imprecise detection results. This paper proposes an improvement to the four-bar targets by making them temperature-controllable. Temperature is controlled by installing thermoelectric coolers (TECs) and thin-film platinum resistors at the center and periphery of the four-bar targets with different spatial frequencies. The dung beetle algorithm is used to optimize fuzzy PID parameters to regulate the TEC’s heating and cooling, improving the overall temperature uniformity of the four-bar targets. Temperature simulations of the four-bar targets were conducted on the COMSOL platform, with the control part simulated on the Simulink platform. The simulation results show that, compared to traditional PID, the fuzzy PID controller reduces overshoot by approximately 3.6%, although the system still exhibits mild oscillations. The fuzzy PID controller optimized by the dung beetle optimization (DBO) algorithm, in comparison to standard fuzzy PID, reduces the settling time by about 40 s and lowers overshoot by around 7%, with oscillations in the system nearly disappearing. Comparing the fuzzy PID optimized by the particle swarm optimization (PSO) algorithm with the fuzzy PID optimized by the DBO algorithm, the DBO-based controller shows shorter rise and settling times, further illustrating the superiority of the fuzzy PID control optimized by the dung beetle algorithm. This provides a theoretical foundation for improving the accuracy of MRTD detector measurements. Finally, experimental verification was carried out. The experimental results indicate that DBO (drosophila-based optimization) has significant advantages, and its optimized results are closer to the actual values. Full article

The growing need for the multiband photodetection of a single scene has promoted the development of both multispectral coupling and broadband detection technologies. Photodetectors operating across the infrared (IR) to terahertz (THz) regions have many applications such as in optical communications, sensing imaging, material identification, and biomedical detection. In this review, we present a comprehensive overview of the latest advances in broadband photodetectors operating in the infrared to terahertz range, highlighting their classification, operating principles, and performance characteristics. We discuss the challenges faced in achieving broadband detection and summarize various strategies employed to extend the spectral response of photodetectors. Lastly, we conclude by outlining future research directions in the field of broadband photodetection, including the utilization of novel materials, artificial microstructure, and integration schemes to overcome current limitations. These innovative methodologies have the potential to achieve high-performance, ultra-broadband photodetectors. Full article

Bi₂Sr₂Co₂O_y thin films were grown on 10° vicinal-cut Al₂O₃ (0001) single crystalline substrates by pulsed laser-deposition techniques with in situ annealing, post-annealing and non-annealing process, respectively. The pure phase Bi₂Sr₂Co₂O_y thin film was obtained with a non-annealing process. The result of X-ray diffraction showed that Bi₂Sr₂Co₂O_y thin film was obviously c-axis preferred orientation. The laser-induced thermoelectric voltage signals were detected in Bi₂Sr₂Co₂O_y thin films, which originated from the anisotropy of the Seebeck coefficient. The maximum peak value of laser-induced thermoelectric voltage was strong and could reach as large as 0.44 V and the response time was 1.07 μs when the deposition time was 6 min. Furthermore, the peak voltage enhanced linearly with the single-pulse laser energy. These characteristics demonstrate that Bi₂Sr₂Co₂O_y thin film is also an excellent choice for laser energy/power detectors. Full article

Submicron-structured films of thermoelectric materials, exhibiting an improved thermoelectric figure of merit, are reviewed, including methods of fabrication and characterization. The review emphasizes the beneficial role of the grain boundaries in polycrystalline films. The enhanced Seebeck coefficient of lead chalcogenide films is attributed to a potential relief that is built along the grain boundaries. It scatters charge carriers with low energy and does not affect carriers with higher energy. The model that accounts for the thermoelectric properties of the films is described and assessed experimentally. The application of a flexible thermoelectric device (module) based on the nanocrystalline film thermoelectric semiconductors as high sensitivity radiation detectors is suggested. Full article

Inorganic halide perovskites of the type AMX₃, where A is an inorganic cation, M is a metal cation, and X is a halide anion, have attracted attention for optoelectronics applications due to their better optical and electronic properties, and stability, under a moist and elevated temperature environment. In this contribution, the electronic, optical, thermoelectric, and elastic properties of cesium lead bromide, CsPbBr₃, and Rb-doped CsPbBr₃, were evaluated using the density functional theory (DFT). The generalized gradient approximation (GGA) in the scheme of Perdew, Burke, and Ernzerhof (PBE) was employed for the exchange–correlation potential. The calculated value of the lattice parameter is in agreement with the available experimental and theoretical results. According to the electronic property results, as the doping content increases, so does the energy bandgap, which decreases after doping 0.75. These compounds undergo a direct band gap and present an energies gap values of about 1.70 eV (x = 0), 3.76 eV (x = 0.75), and 1.71 eV (x = 1). The optical properties, such as the real and imaginary parts of the dielectric function, the absorption coefficient, optical conductivity, refractive index, and extinction coefficient, were studied. The thermoelectric results show that after raising the temperature to 800 K, the thermal and electrical conductivities of the compound RbxCs_1−xPbBr₃ increases (x = 0, 0.25, 0.50 and 1). Rb_0.75Cs_0.25PbBr₃ (x = 0.75), which has a large band gap, can work well for applications in the ultraviolet region of the spectrum, such as UV detectors, are potential candidates for solar cells; whereas, CsPbBr₃ (x = 0) and RbPbBr₃ (x = 1), have a narrow and direct band gap and outstanding absorption power in the visible ultraviolet energy range. Full article

A highly sensitive room-temperature graphene photothermoelectric terahertz detector, with an efficient optical coupling structure of asymmetric logarithmic antenna, was fabricated by planar micro-nano processing technology and two-dimensional material transfer techniques. The designed logarithmic antenna acts as an optical coupling structure to effectively localize the incident terahertz waves at the source end, thus forming a temperature gradient in the device channel and inducing the thermoelectric terahertz response. At zero bias, the device has a high photoresponsivity of 1.54 A/W, a noise equivalent power of 19.8 pW/Hz^1/2, and a response time of 900 ns at 105 GHz. Through qualitative analysis of the response mechanism of graphene PTE devices, we find that the electrode-induced doping of graphene channel near the metal-graphene contacts play a key role in the terahertz PTE response. This work provides an effective way to realize high sensitivity terahertz detectors at room temperature. Full article

A novel Epitaxial Cadmium Selenide (CdSe) on Lead Selenide (PbSe) type-II heterojunction photovoltaic detector has been demonstrated by Molecular Beam Epitaxy (MBE) growth of n-type CdSe on p-type PbSe single crystalline film. The use of Reflection High-Energy Electron Diffraction (RHEED) during the nucleation and growth of CdSe indicates high-quality single-phase cubic CdSe. This is a first-time demonstration of single crystalline and single phase CdSe growth on single crystalline PbSe, to the best of our knowledge. The current–voltage characteristic indicates a p–n junction diode with a rectifying factor over 50 at room temperature. The detector structure is characterized by radiometric measurement. A 30 μm × 30 μm pixel achieved a peak responsivity of 0.06 A/W and a specific detectivity (D*) of 6.5 × 10⁸ Jones under a zero bias photovoltaic operation. With decreasing temperature, the optical signal increased by almost an order of magnitude as it approached 230 K (with thermoelectric cooling) while maintaining a similar level of noise, achieving a responsivity of 0.441 A/W and a D* of 4.4 × 10⁹ Jones at 230 K. Full article

Infrared imaging sensors are frequently used in thermal signature detection applications in industrial, automotive, military and many other areas. However, advanced infrared detectors are generally associated with high costs and complexity. Infrared detectors usually necessitate a thermoelectric heater–cooler for temperature stabilization and various computationally complex preprocessing algorithms for fixed pattern noise (FPN) correction. In this paper, we leverage the benefits of uncooled focal plane arrays and describe a complete digital circuit design for Field Programmable Gate Array (FPGA)-based infrared image acquisition and pre-processing. The proposed design comprises temperature compensation, non-uniformity correction, defective pixel correction cores, spatial image transformation and registration with RGB images. When implemented on Xilinx Ultrascale+ FPGA, the system achieves a throughput of 30 frames per second using the Fraunhofer IMS Digital 17 μm QVGA-IRFPA with a microbolometer array size of 320 × 240 pixels and an RGB camera with a 1024 × 720 resolution. The maximum ratio of the standard deviation to the mean of 0.35% was achieved after FPN correction. Full article

ZnO/ZnS core/shell nanostructures, which are studied for diverse possible applications, ranging from semiconductors, photovoltaics, and light-emitting diodes (LED), to solar cells, infrared detectors, and thermoelectrics, were synthesized and characterized by XRD, HR-(S)TEM, and analytical TEM (EDX and EELS). Moreover, band-gap measurements of the ZnO/ZnS core/shell nanostructures have been performed using UV/Vis DRS. The experimental results were combined with theoretical modeling of ZnO/ZnS (hetero)structures and band structure calculations for ZnO/ZnS systems, yielding more insights into the properties of the nanoparticles. The ab initio calculations were performed using hybrid PBE0 and HSE06 functionals. The synthesized and characterized ZnO/ZnS core/shell materials show a unique three-phase composition, where the ZnO phase is dominant in the core region and, interestingly, the auxiliary ZnS compound occurs in two phases as wurtzite and sphalerite in the shell region. Moreover, theoretical ab initio calculations show advanced semiconducting properties and possible band-gap tuning in such ZnO/ZnS structures. Full article

This paper presents a single-inductor boost converter for thermoelectric energy harvesting. A two-stages startup circuit with a three-phase operation is adopted to obtain self-startup with a single inductor. To extract the maximum energy, a coarse- and fine-tuning MPPT is proposed to adaptively and effectively track the internal source resistance. By designing a zero-current detector, the synchronization loss is reduced, which significantly improves the peak efficiency. The boost converter is implemented in a 0.18-μm standard CMOS process. Simulation results show that the converter self-starts the operation from a TEG voltage of 128 mV and achieves 88% peak efficiency, providing a maximum output power of 3.78 mW. The improved MPPT enables the converter to sustain the operation at an input voltage as low as 7.5 mV after self-startup. Full article

Correct understanding of the ignition and combustion processes in the combustion chambers are critical for modeling advanced schemes of engines of high-speed aircraft and promising spacecraft. Moreover, experimental data on the ignition delay time are a universal basis for the development and testing of combustion kinetic models. Moreover, the higher the temperature of the fuel mixture, the smaller this time value and the more important its correct determination. The use of a thermoelectric detector allows to measure ignition delay times and record heat fluxes with a high time resolution (to tenths of μs) during ignition in propane–air mixtures. Due to the faster response time, the use of it allows refining the ignition delay time of the combustible mixture, and the detector itself can serve as a useful device that allows a more detailed study of the ignition processes. Full article

In this work, pulse laser detectors based on the transverse thermoelectric effect of YBa₂Cu₃O_7-δ thin films on vicinal cut LaAlO₃ (001) substrates have been fabricated. The anisotropic Seebeck coefficients between ab-plane (S_ab) and c-axis (S_c) of thin films are utilized to generate the output voltage signal in such kind of detectors. Fast response has been determined in these sensors, including both the rise time and the decay time. Under the irradiation of pulse laser with the pulse duration of 5–7 ns, the output voltage of these detectors shows the rise time and the decay time of 6 and 42 ns, respectively, which are much smaller than those from other materials. The small rise time in YBa₂Cu₃O_7-δ-based detectors may be due to its low resistivity. While the high thermal conductivity and the large contribution of electronic thermal conductivity to the thermal conductivity of YBa₂Cu₃O_7-δ are thought to be responsible for the small decay time. In addition, these detectors show good response under the irradiation of pulse lasers with a repetition rate of 4 kHz, including the precise determinations of amplitude and time. These results may pave a simple and convenient approach to manufacture the pulse laser detectors with a fast response. Full article