Search Results (9)

Radio frequency identification (RFID) technology has gained significant attention in various industry sectors due to its potential for efficient inventory management, asset tracking, and object localization. Different RFID technologies are available; resorting to harmonic signals is currently less used but, recently, has gained interest in research activity. In this study, we present the design, prototype realization, and performance evaluation of a dual-band dual-polarized harmonic tag. The tag incorporates a dual-band matching circuit utilizing a zero-bias Schottky diode HSMS-2850 connected to a perturbed annular ring patch antenna. The antenna, in fact, is able to radiate in cross-polarization at the higher frequency. Through a comprehensive design methodology, including simulation optimization and prototype fabrication, we demonstrate the successful implementation of the tag. Measurements to validate the impedance matching properties, radiation patterns, and backscattering capability of the tag are also shown. Full article

In this work, a GaN-on-Si quasi-vertical Schottky diode was demonstrated on a locally grown n-GaN drift layer using Selective Area Growth (SAG). The diode achieved a current density of 2.5 kA/cm², a specific on-resistance ${\mathrm{R}}_{\mathrm{O}\mathrm{N},\mathrm{s}\mathrm{p}}$ of 1.9 mΩ cm² despite the current crowding effect in quasi-vertical structures, and an on/off current ratio (I_on/I_off) of 10¹⁰. Temperature-dependent current–voltage characteristics were measured in the range of 313–433 K to investigate the mechanisms of leakage conduction in the device. At near-zero bias, thermionic emission (TE) was found to dominate. By increasing up to 10 V, electrons gained enough energy to excite into trap states, leading to the dominance of Frenkel–Poole emission (FPE). For a higher voltage range (−10 V to −40 V), the increased electric field facilitated the hopping of electrons along the continuum threading dislocations in the “bulk” GaN layers, and thus, variable range hopping became the main mechanism for the whole temperature range. This work provides an in-depth insight into the leakage conduction transport on pseudo-vertical GaN-on-Si Schottky barrier diodes (SBDs) grown by localized epitaxy. Full article

Graphene–silicon Schottky diodes are intriguing devices that straddle the border between classical models and two-dimensional ones. Many papers have been published in recent years studying their operation based on the classical model developed for metal–silicon Schottky diodes. However, the results obtained for diode parameters vary widely in some cases showing very large deviations with respect to the expected range. This indicates that our understanding of their operation remains incomplete. When modeling these devices, certain aspects strictly connected with the quantum mechanical features of both graphene and the interface with silicon play a crucial role and must be considered. In particular, the dependence of the graphene Fermi level on carrier density, the relation of the latter with the density of surface states in silicon and the coupling between in-plane and out-of-plane dynamics in graphene are key aspects for the interpretation of their behavior. Within the thermionic regime, we estimate the zero-bias Schottky barrier height and the density of silicon surface states in graphene/type-p silicon diodes by adapting a kown model and extracting ideality index values close to unity. The ohmic regime, beyond the flat band potential, is modeled with an empirical law, and the current density appears to be roughly proportional to the electric field at the silicon interface; moreover, the graphene-to-silicon electron tunneling efficiency drops significantly in the transition from the thermionic to ohmic regime. We attribute these facts to (donor) silicon surface states, which tend to be empty in the ohmic regime. Full article

Triboelectric nanogenerators (TENGs) based on sliding metal–semiconductor junctions are an emerging technology that can efficiently convert mechanical into electrical energy. These miniature autonomous power sources can output large direct current (DC) densities, but often suffer from limited durability; hence, their practical scope remains uncertain. Herein, through a combination of conductive atomic force microscopy (C-AFM) and photocurrent decay (PCM) experiments, we explored the underlying cause of surface wear during the operation of DC-TENGs. Using monolayer-functionalized Si(211) surfaces as the model system, we demonstrate the extent to which surface damage develops during TENG operation. We reveal that the introduction of surface defects (oxide growth) during TENG operation is not caused by the passage of the rather large current densities (average output of ~2 × 10⁶ A/m²); it is instead mainly caused by the large pressure (~GPa) required for the sliding Schottky diode to output a measurable zero-bias current. We also discovered that the drop in output during operation occurs with a delay in the friction/pressure event, which partially explains why such deterioration of DC-TENG performance is often underestimated or not reported. Full article

We present the characterization of a Zero-bias Schottky diode-based Terahertz (THz) detector up to 5.56 THz. The detector was operated with both a table-top system until 1.2 THz and at a Free-Electron Laser (FEL) facility at singular frequencies from 1.9 to 5.56 THz. We used two measurement techniques in order to discriminate the sub-ns-scale (via a 20 GHz oscilloscope) and the ms-scale (using the lock-in technique) responsivity. While the lock-in measurements basically contain all rectification effects, the sub-ns-scale detection with the oscilloscope is not sensitive to slow bolometric effects caused by changes of the IV characteristic due to temperature. The noise equivalent power (NEP) is 10 pW/$\sqrt{\mathrm{Hz}}$ in the frequency range from 0.2 to 0.6 THz and 17 pW/$\sqrt{\mathrm{Hz}}$ at 1.2 THz and increases to 0.9 $\mathsf{\mu }$W/$\sqrt{\mathrm{Hz}}$ at 5.56 THz, which is at the state of the art for room temperature zero-bias Schottky diode-based THz detectors with non-resonant antennas. The voltage and current responsivity of ∼500 kV/W and ∼100 mA/W, respectively, is demonstrated over a frequency range of 0.2 to 1.2 THz with the table-top system. Full article

Traditional GaAs-based frequency multipliers still exhibit great challenges to meet the demand for solid-state high-power THz sources due to low breakdown voltage and heat dissipation of the Schottky barrier diode (SBD). In this study, a GaN SBD chain was fabricated with n⁻/n⁺-GaN structure. As a consequence, the breakdown voltage of 54.9 V at 1 μA and cut-off frequency of 587.5 GHz at zero bias were obtained. A 120 GHz frequency-doubler module based on the GaN SBD chain was designed and fabricated. When driven with 500 mW input power in a continuous wave, the output power of the frequency-doubler module was 15.1 mW at 120 GHz. Moreover, the experiments show that the frequency-doubler module can endure an input power of 2 W. In addition, it is worth noting that the SBD chain works well at an anode temperature of 337.2 °C. Full article

In this paper, the design, fabrication, and measurement of a compact broadband (4–8 GHz) analog complex correlator for a passive millimeter-wave imaging system are presented. To achieve high sensitivity and high integration of the imaging system, the wideband and miniaturization of the correlator are required. The correlator achieves wide bandwidth by using the add-and-square method, which is composed of a six-port circuit and a detection circuit. In order to realize the miniaturization of the correlator, the six-port circuit is realized on the chip base on the 0.15-μm gallium arsenide (GaAs) process. The influence of mismatch of the detection circuit that employs zero-bias Schottky diodes on the correlator is also analyzed to guide the design of the correlator. The measurement results of the designed chips and detector are consistent with the simulation result. Finally, a Sweep-frequency test is applied to the designed correlator, and the measurement results show that, within the frequency range of 4–8 GHz, the correlation amplitude fluctuation is less than 1.9 dB and the correlation efficiency is larger than 99%, which reveal that the correlator is suited for interferometric passive millimeter-wave imaging applications. Full article

In this paper, D-band (110–170 GHz) frequency tripler module is presented using anti-parallel GaAs Schottky diode pair and waveguide-to-microstrip transitions. The anti-parallel diode pair is used as a nonlinear device generating harmonic components for Q-band input signal (33–50 GHz). The diode is zero-biased to eliminate the bias circuits and thus minimize the number of circuit components for low-cost hybrid fabrication. The anti-parallel connection of two identical diodes effectively suppresses DC and even harmonics in the output. Furthermore, the first and second harmonics of Q-band input signal are cut off by D-band rectangular waveguide. Input and output impedance matching networks are designed based on the optimum impedances determined by harmonic source- and load-pull simulations using the developed nonlinear diode model. Waveguide-to-microstrip transitions at Q- and D-bands are also designed using E-plane probe to package the frequency tripler in the waveguide module. The compensation circuit is added to reduce the impedance mismatches by bond-wires connecting two separate substrates. The fabricated frequency tripler module produces a maximum output power of 5.4 dBm at 123 GHz under input power of 20.5 dBm. A 3 dB bandwidth is as wide as 22.5% from 118.5 to 148.5 GHz at the input power of 15.0 dBm. This result corresponds to the excellent bandwidth performance with a conversion gain comparable to the previously reported frequency tripler operating at D-band. Full article

This paper presents and discusses three different low-cost microstrip implementations of Schottky-diode detectors in W Band, based on the use of the Zero Bias Diode (ZBD) from VDI (Virginia Diodes, Charlottesville, VA, USA). Designs are based on a previous work of modeling of the ZBD diode. Designs also feature low-cost, easy-to-use tooling substrates (RT Duroid 5880, 5 mils thickness) and even low-cost discrete SMD components such as SOTA resistances (State Of The Art ^TM miniaturized surface mount resistors), which are modeled to be used well above commercial frequency margins. Intensive use of 3D EM simulation tools such as HFSS ^TM is done to support microstrip board modeling. Measurements of the three designs fabricated are compared to simulations and discussed. Full article