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Electronics
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RF, Microwave and Millimeter Wave Devices and Integrated Systems
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RF, Microwave and Millimeter Wave Devices and Integrated Systems

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Microwave and Wireless Communications".

Deadline for manuscript submissions: closed (31 December 2021) | Viewed by 12784

Special Issue Editor

Prof. Dr. Rodica Ramer

E-Mail Website
Guest Editor
The School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, NSW 2052, Australia
Interests: RF, microwave, millimetre wave and terahertz devices; MEMS and NEMS technology; reconfigurable RF, microwave and millimetre wave integrated systems; integrated MEMS/CMOS circuits; RF-CMOS components; wireless sensors for industrial and biomedical applications

Special Issue Information

Dear Colleagues,

The field of interest of this Special Issue will be novel aspects of theory, techniques and applications of guided wave and wireless technologies spanning the electromagnetic spectrum from RF/microwave through millimetre-waves and terahertz, including the aspects of materials, components, devices, circuits, modules and systems that involve the generation, transmission, sensing and effects of electromagnetic signals.

Prof. Dr. Rodica Ramer
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Reconfigurable filters and systems design
  • Reconfigurable antennas and systems design
  • Terahertz electronic components
  • Electromagnetic applications for biomedicine
  • Novel materials for high-frequency applications

Published Papers (4 papers)

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Research

15 pages, 4588 KiB  
Article
Compact Double Notch Coplanar and Microstrip Bandstop Filters Using Metamaterial—Inspired Open Ring Resonators
by Juan Hinojosa, Félix L. Martínez-Viviente and Alejandro Alvarez-Melcon
Electronics 2021, 10(3), 330; https://doi.org/10.3390/electronics10030330 - 1 Feb 2021
Cited by 6 | Viewed by 2503
Abstract
Compact double notch coplanar and microstrip bandstop filters are described. They are based on a version of the open interconnected split ring resonator (OISRR) integrated in microstrip or coplanar waveguides. The OISRR introduces an RLC resonator connected in parallel with the propagating microstrip [...] Read more.
Compact double notch coplanar and microstrip bandstop filters are described. They are based on a version of the open interconnected split ring resonator (OISRR) integrated in microstrip or coplanar waveguides. The OISRR introduces an RLC resonator connected in parallel with the propagating microstrip line. Therefore, this resonator can be modeled as a shunt circuit to ground, with the R, L and C elements connected in series. The consequence for the frequency response of the device is a notch band at the resonant frequency of the RLC shunt circuit. The number of notch bands can be controlled by adding more OISRRs, since each pair of rings can be modeled as a shunt circuit and therefore introduces an additional notch band. In this paper, we demonstrate that these additional rings can be introduced in a concentric way in the same cell, so the size of the device does not increase and a compact multi-notch bandstop response is achieved, with the same number of notch bands as pairs of concentric rings, plus an additional spurious band at a higher frequency. Full article
(This article belongs to the Special Issue RF, Microwave and Millimeter Wave Devices and Integrated Systems)
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7 pages, 2297 KiB  
Article
H-Band InP HBT Frequency Tripler Using the Triple-Push Technique
by Jinho Jeong, Jisu Choi, Jongyoun Kim and Wonseok Choe
Electronics 2020, 9(12), 2081; https://doi.org/10.3390/electronics9122081 - 6 Dec 2020
Cited by 3 | Viewed by 2299
Abstract
A broadband H-band (220 GHz–325 GHz) frequency tripler using the triple-push technique is presented in 250-nm InP heterojunction bipolar transistors (HBT) technology. It consisted of three identical unit-cell multipliers, which were individually pumped by the W-band input signals with 120° phase [...] Read more.
A broadband H-band (220 GHz–325 GHz) frequency tripler using the triple-push technique is presented in 250-nm InP heterojunction bipolar transistors (HBT) technology. It consisted of three identical unit-cell multipliers, which were individually pumped by the W-band input signals with 120° phase difference. For this purpose, a 120° 3-way power divider was proposed using the 1:2 and 1:1 Lange couplers with 30° phase delay lines. The fundamental and 2nd harmonic signals of each unit-cell multiplier were added out-of-phase at the output, allowing an effective harmonic suppression. On the contrast, the 3rd harmonic components were combined in-phase at the output, so that the entire circuit successfully did the function of the frequency multiplier-by-3. The fabricated frequency tripler exhibited a broadband output power of −7.4 ± 1.4 dBm from 225 GHz to 330 GHz at an input power of 9.6 ± 0.8 dBm, with an average conversion gain of −16.8 dB. Full article
(This article belongs to the Special Issue RF, Microwave and Millimeter Wave Devices and Integrated Systems)
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11 pages, 4823 KiB  
Article
D-Band Frequency Tripler Module Using Anti-Parallel Diode Pair and Waveguide Transitions
by Jihoon Doo, Jongyoun Kim and Jinho Jeong
Electronics 2020, 9(8), 1201; https://doi.org/10.3390/electronics9081201 - 27 Jul 2020
Cited by 6 | Viewed by 3809
Abstract
In this paper, D-band (110–170 GHz) frequency tripler module is presented using anti-parallel GaAs Schottky diode pair and waveguide-to-microstrip transitions. The anti-parallel diode pair is used as a nonlinear device generating harmonic components for Q-band input signal (33–50 GHz). The diode is zero-biased [...] Read more.
In this paper, D-band (110–170 GHz) frequency tripler module is presented using anti-parallel GaAs Schottky diode pair and waveguide-to-microstrip transitions. The anti-parallel diode pair is used as a nonlinear device generating harmonic components for Q-band input signal (33–50 GHz). The diode is zero-biased to eliminate the bias circuits and thus minimize the number of circuit components for low-cost hybrid fabrication. The anti-parallel connection of two identical diodes effectively suppresses DC and even harmonics in the output. Furthermore, the first and second harmonics of Q-band input signal are cut off by D-band rectangular waveguide. Input and output impedance matching networks are designed based on the optimum impedances determined by harmonic source- and load-pull simulations using the developed nonlinear diode model. Waveguide-to-microstrip transitions at Q- and D-bands are also designed using E-plane probe to package the frequency tripler in the waveguide module. The compensation circuit is added to reduce the impedance mismatches by bond-wires connecting two separate substrates. The fabricated frequency tripler module produces a maximum output power of 5.4 dBm at 123 GHz under input power of 20.5 dBm. A 3 dB bandwidth is as wide as 22.5% from 118.5 to 148.5 GHz at the input power of 15.0 dBm. This result corresponds to the excellent bandwidth performance with a conversion gain comparable to the previously reported frequency tripler operating at D-band. Full article
(This article belongs to the Special Issue RF, Microwave and Millimeter Wave Devices and Integrated Systems)
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7 pages, 3283 KiB  
Article
Monolithic Miniaturized Differentially-Fed Branch-Line Directional Coupler in GaAs Monolithic Technology
by Slawomir Gruszczynski, Robert Smolarz, Changying Wu and Krzysztof Wincza
Electronics 2020, 9(3), 446; https://doi.org/10.3390/electronics9030446 - 6 Mar 2020
Cited by 3 | Viewed by 3355
Abstract
In this paper, a design of a miniaturized branch-line directional coupler is presented. The coupler is designed with balanced coupled-line sections, which are electrically shortened by the application of lumped capacitors. To measure the parameters of the coupler, appropriate baluns have been designed. [...] Read more.
In this paper, a design of a miniaturized branch-line directional coupler is presented. The coupler is designed with balanced coupled-line sections, which are electrically shortened by the application of lumped capacitors. To measure the parameters of the coupler, appropriate baluns have been designed. The coupler has been designed in a GaAs PH25 UMS (united monolithic semiconductor) technology with the center frequency of 24 GHz. The measured power split equals 3 dB with the transmission/coupling imbalance not exceeding 0.6 dB. The measured return losses equal 17 dB at the center frequency, whereas the isolation reaches 17 dB. The fabricated coupler‘s size equals 630 um × 487 um, which is 0.19 of the full size of the directional coupler in the chosen technology (1191 um × 1170 um). Full article
(This article belongs to the Special Issue RF, Microwave and Millimeter Wave Devices and Integrated Systems)
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