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Journal: Micromachines, 2018
Volume: 9
Number: 622

Article: Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant
Authors: by Wen-Yang Hsu, Yuan-Chi Lian, Pei-Yu Wu, Wei-Min Yong, Jinn-Kong Sheu, Kun-Lin Lin and YewChung Sermon Wu
Link: https://www.mdpi.com/2072-666X/9/12/622

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