Next Article in Journal
Efficient Addition Circuits Using Three-Gate Reconfigurable Field Effect Transistors
Previous Article in Journal
A Low Power Injection-Locked CDR Using 28 nm FDSOI Technology for Burst-Mode Applications
 
 
Article

Article Versions Notes

J. Low Power Electron. Appl. 2024, 14(2), 23; https://doi.org/10.3390/jlpea14020023
Action Date Notes Link
article pdf uploaded. 13 April 2024 12:07 CEST Version of Record https://www.mdpi.com/2079-9268/14/2/23/pdf-vor
article xml file uploaded 16 April 2024 09:42 CEST Original file -
article xml uploaded. 16 April 2024 09:42 CEST Update https://www.mdpi.com/2079-9268/14/2/23/xml
article pdf uploaded. 16 April 2024 09:42 CEST Updated version of record https://www.mdpi.com/2079-9268/14/2/23/pdf
article html file updated 16 April 2024 09:44 CEST Original file https://www.mdpi.com/2079-9268/14/2/23/html
Back to TopTop