Previous Issue
Volume 14, March
 
 

J. Low Power Electron. Appl., Volume 14, Issue 2 (June 2024) – 8 articles

  • Issues are regarded as officially published after their release is announced to the table of contents alert mailing list.
  • You may sign up for e-mail alerts to receive table of contents of newly released issues.
  • PDF is the official format for papers published in both, html and pdf forms. To view the papers in pdf format, click on the "PDF Full-text" link, and use the free Adobe Reader to open them.
Order results
Result details
Select all
Export citation of selected articles as:
12 pages, 1482 KiB  
Article
Gate-Level Hardware Priority Resolvers for Embedded Systems
by Padmanabhan Balasubramanian and Douglas L. Maskell
J. Low Power Electron. Appl. 2024, 14(2), 25; https://doi.org/10.3390/jlpea14020025 - 17 Apr 2024
Viewed by 301
Abstract
An N-bit priority resolver having N inputs and N outputs functions as polling hardware in an embedded system, enabling access to a resource when multiple devices initiate access requests at its inputs which may be located on-chip or off-chip. Subsystems such as data [...] Read more.
An N-bit priority resolver having N inputs and N outputs functions as polling hardware in an embedded system, enabling access to a resource when multiple devices initiate access requests at its inputs which may be located on-chip or off-chip. Subsystems such as data buses, comparators, fixed- and floating-point arithmetic units, interconnection network routers, etc., utilize the priority resolver function. In the literature, there are many transistor-level designs for the priority resolver based on dynamic CMOS logic, some of which are modular and others are not. This article presents a novel gate-level modular design of priority resolvers that can accommodate any number of inputs and outputs. Based on our modular design architecture, small-size priority resolvers can be conveniently combined to form medium- or large-size priority resolvers along with extra logic. The proposed modular design approach helps to reduce the coding complexity compared to the conventional direct design approach and facilitates scalability. We discuss the gate-level implementation of 4-, 8-, 16-, 32-, 64-, and 128-bit priority resolvers based on the direct and modular approaches and provide a performance comparison between these based on the design metrics. According to the modular approach, different sizes of priority resolver modules were used to implement larger-size priority resolvers. For example, a 4-bit priority resolver module was used to implement 8-, 16-, 32-, 64-, and 128-bit priority resolvers in a modular fashion. We used a 28 nm CMOS standard digital cell library and Synopsys EDA tools to synthesize the priority resolvers. The estimated design metrics show that the modular approach tends to facilitate increasing reductions in delay and power-delay product (PDP) compared to the direct approach, especially as the size of the priority resolver increases. For example, a 32-bit modular priority resolver utilizing 16-bit priority resolver modules had a 39.4% reduced delay and a 23.1% reduced PDP compared to a directly implemented 32-bit priority resolver, and a 128-bit modular priority resolver utilizing 16-bit priority resolver modules had a 71.8% reduced delay and a 61.4% reduced PDP compared to a directly implemented 128-bit priority resolver. Full article
Show Figures

Figure 1

8 pages, 2415 KiB  
Brief Report
Efficient Addition Circuits Using Three-Gate Reconfigurable Field Effect Transistors
by Fanny Spagnolo, Pasquale Corsonello, Fabio Frustaci and Stefania Perri
J. Low Power Electron. Appl. 2024, 14(2), 24; https://doi.org/10.3390/jlpea14020024 - 14 Apr 2024
Viewed by 333
Abstract
Reconfigurable FETs (RFETs) are widely recognized as a promising way to overcome conventional CMOS architectures. This paper presents novel addition circuit intentionally designed to exploit the ability of RFETs to operate efficiently on demand as n- or p-type FETs. First, a novel Full [...] Read more.
Reconfigurable FETs (RFETs) are widely recognized as a promising way to overcome conventional CMOS architectures. This paper presents novel addition circuit intentionally designed to exploit the ability of RFETs to operate efficiently on demand as n- or p-type FETs. First, a novel Full Adder (FA) is proposed and characterized. A comparison with other designs shows that the proposed FA achieves a worst-case delay and a dynamic power consumption of up to 43.5% and 79% lower. As a drawback, in terms of the estimated area, it is up to 32% larger than the competitors. Then, the new FA is used to implement Ripple-Carry Adders (RCAs). A 32-bit adder designed as proposed herein reaches an energy–delay product (EDP) ~25.7× and ~141× lower than its CMOS and the RFET-based counterparts. Full article
Show Figures

Figure 1

15 pages, 1776 KiB  
Article
Vehicle Detection in Adverse Weather: A Multi-Head Attention Approach with Multimodal Fusion
by Nujhat Tabassum and Mohamed El-Sharkawy
J. Low Power Electron. Appl. 2024, 14(2), 23; https://doi.org/10.3390/jlpea14020023 - 13 Apr 2024
Viewed by 305
Abstract
In the realm of autonomous vehicle technology, the multimodal vehicle detection network (MVDNet) represents a significant leap forward, particularly in the challenging context of weather conditions. This paper focuses on the enhancement of MVDNet through the integration of a multi-head attention layer, aimed [...] Read more.
In the realm of autonomous vehicle technology, the multimodal vehicle detection network (MVDNet) represents a significant leap forward, particularly in the challenging context of weather conditions. This paper focuses on the enhancement of MVDNet through the integration of a multi-head attention layer, aimed at refining its performance. The integrated multi-head attention layer in the MVDNet model is a pivotal modification, advancing the network’s ability to process and fuse multimodal sensor information more efficiently. The paper validates the improved performance of MVDNet with multi-head attention through comprehensive testing, which includes a training dataset derived from the Oxford Radar RobotCar. The results clearly demonstrate that the multi-head MVDNet outperforms the other related conventional models, particularly in the average precision (AP) of estimation, under challenging environmental conditions. The proposed multi-head MVDNet not only contributes significantly to the field of autonomous vehicle detection but also underscores the potential of sophisticated sensor fusion techniques in overcoming environmental limitations. Full article
Show Figures

Figure 1

18 pages, 12068 KiB  
Article
A Low Power Injection-Locked CDR Using 28 nm FDSOI Technology for Burst-Mode Applications
by Yuqing Mao, Yoann Charlon, Yves Leduc and Gilles Jacquemod
J. Low Power Electron. Appl. 2024, 14(2), 22; https://doi.org/10.3390/jlpea14020022 - 07 Apr 2024
Viewed by 489
Abstract
In this paper, a low-power Injection-Locked Clock and Data Recovery (ILCDR) using a 28 nm Ultra-Thin Body and Box-Fully Depleted Silicon On Insulator (UTBB-FDSOI) technology is presented. The back-gate auto-biasing of UTBB-FDSOI transistors enables the creation of a Quadrature Ring Oscillator (QRO) reducing [...] Read more.
In this paper, a low-power Injection-Locked Clock and Data Recovery (ILCDR) using a 28 nm Ultra-Thin Body and Box-Fully Depleted Silicon On Insulator (UTBB-FDSOI) technology is presented. The back-gate auto-biasing of UTBB-FDSOI transistors enables the creation of a Quadrature Ring Oscillator (QRO) reducing both size and power consumption compared to an LC tank oscillator. By injecting a digital signal into this circuit, we realize an Injection-Locked Oscillator (ILO) with low jitter. Thanks to the good performance of this oscillator, we propose a low-power ILCDR with fast locking time and low jitter for burst-mode applications. The main novelty consists of the implementation of a complementary QRO based on back-gate control using FDSOI technology to realize a simple and efficient ILCDR circuit. With a Pseudo-Random Binary Sequence (PRBS7) at 868 Mbps, the recovered clock jitter is 26.7 ps (2.3% UIp-p) and the recovered data jitter is 11.9 ps (1% UIp-p). With a 0.6 V power supply, the power consumption is 318μW. All the results presented here are based on post-layout simulations, as no prototypes have been produced. Similarly, we can estimate the surface area of the chip (without the pad ring) at around 6600 μm2. Full article
Show Figures

Figure 1

19 pages, 677 KiB  
Article
A 0.3 V OTA with Enhanced CMRR and High Robustness to PVT Variations
by Riccardo Della Sala, Francesco Centurelli, Giuseppe Scotti and Alessandro Trifiletti
J. Low Power Electron. Appl. 2024, 14(2), 21; https://doi.org/10.3390/jlpea14020021 - 02 Apr 2024
Viewed by 657
Abstract
In this paper, we present a 0.3 V body-driven operational transconductance amplifier (OTA) that exploits a biasing approach based on the use of a replica loop with gain. An auxiliary amplifier is exploited both in the current mirror load of the first stage [...] Read more.
In this paper, we present a 0.3 V body-driven operational transconductance amplifier (OTA) that exploits a biasing approach based on the use of a replica loop with gain. An auxiliary amplifier is exploited both in the current mirror load of the first stage of the OTA and in the replica loop in order to achieve super-diode behavior, resulting in low mirror gain error, which enhances CMRR, and robust biasing. Common-mode feedforward, provided by the replica loop, further enhances CMRR. Simulations in a 180 nm CMOS technology show 65 dB gain with 2 kHz unity-gain frequency on a 200 pF load when consuming 9 nW. Very high linearity with a 0.24% THD at 90% full-scale and robustness to PVT variations are also achieved. Full article
Show Figures

Figure 1

14 pages, 4880 KiB  
Article
Dual-Band Large-Frequency Ratio Power Divider Using Mode Composite Transmission Line for 5G Communication Systems
by Kaijun Song, Lele Fang and Yedi Zhou
J. Low Power Electron. Appl. 2024, 14(2), 20; https://doi.org/10.3390/jlpea14020020 - 31 Mar 2024
Viewed by 647
Abstract
In this paper, a novel kind of mode composite transmission line (MC-TL) is proposed, and a dual-band power divider with a large frequency ratio using this novel MC-TL for 5G communication systems was developed. The proposed MC-TL was developed using spoof surface plasmon [...] Read more.
In this paper, a novel kind of mode composite transmission line (MC-TL) is proposed, and a dual-band power divider with a large frequency ratio using this novel MC-TL for 5G communication systems was developed. The proposed MC-TL was developed using spoof surface plasmon polaritons (SSPPs) and a corrugated substrate-integrated waveguide (CSIW) transmission line, which supports both a surface plasmon mode and TE10 mode, independently. The surface plasmon mode operates in the grooves of the surface metal layer, while the TE10 mode works in the substrate between two metal layers. These two parts can transmit different modes at independent frequencies. This structure can be used in dual-band transmission lines with a high frequency ratio. The characteristics and design of the MC-TL (SSPPs and CSIW) are analyzed and illustrated. The MC-TL was fabricated and measured to demonstrate its performance. Moreover, based on the proposed MC-TL, a dual-band power divider with a large frequency ratio (operating at 3 GHz and 28 GHz simultaneously) was also designed and fabricated. It can cover the frequency of a fifth-generation communication system perfectly. The measured outcomes align closely with the simulated results, demonstrating robust agreement and showcasing excellent transmission capabilities. Full article
Show Figures

Figure 1

20 pages, 3068 KiB  
Article
A Citizen Science Tool Based on an Energy Autonomous Embedded System with Environmental Sensors and Hyperspectral Imaging
by Charalampos S. Kouzinopoulos, Eleftheria Maria Pechlivani, Nikolaos Giakoumoglou, Alexios Papaioannou, Sotirios Pemas, Panagiotis Christakakis, Dimosthenis Ioannidis and Dimitrios Tzovaras
J. Low Power Electron. Appl. 2024, 14(2), 19; https://doi.org/10.3390/jlpea14020019 - 27 Mar 2024
Viewed by 897
Abstract
Citizen science reinforces the development of emergent tools for the surveillance, monitoring, and early detection of biological invasions, enhancing biosecurity resilience. The contribution of farmers and farm citizens is vital, as volunteers can strengthen the effectiveness and efficiency of environmental observations, improve surveillance [...] Read more.
Citizen science reinforces the development of emergent tools for the surveillance, monitoring, and early detection of biological invasions, enhancing biosecurity resilience. The contribution of farmers and farm citizens is vital, as volunteers can strengthen the effectiveness and efficiency of environmental observations, improve surveillance efforts, and aid in delimiting areas affected by plant-spread diseases and pests. This study presents a robust, user-friendly, and cost-effective smart module for citizen science that incorporates a cutting-edge developed hyperspectral imaging (HI) module, integrated in a single, energy-independent device and paired with a smartphone. The proposed module can empower farmers, farming communities, and citizens to easily capture and transmit data on crop conditions, plant disease symptoms (biotic and abiotic), and pest attacks. The developed HI-based module is interconnected with a smart embedded system (SES), which allows for the capture of hyperspectral images. Simultaneously, it enables multimodal analysis using the integrated environmental sensors on the module. These data are processed at the edge using lightweight Deep Learning algorithms for the detection and identification of Tuta absoluta (Meyrick), the most important invaded alien and devastating pest of tomato. The innovative Artificial Intelligence (AI)-based module offers open interfaces to passive surveillance platforms, Decision Support Systems (DSSs), and early warning surveillance systems, establishing a seamless environment where innovation and utility converge to enhance crop health and productivity and biodiversity protection. Full article
Show Figures

Figure 1

9 pages, 2773 KiB  
Communication
A Compact 0.73~3.1 GHz CMOS VCO Based on Active-Inductor and Active-Resistor Topology
by Chatrpol Pakasiri, Ke-Chung Hsu and Sen Wang
J. Low Power Electron. Appl. 2024, 14(2), 18; https://doi.org/10.3390/jlpea14020018 - 25 Mar 2024
Viewed by 679
Abstract
In this paper, a wideband VCO that covers popular Long-Term Evolution (LTE) 0.7 GHz and LTE 2.6 GHz frequencies is designed and developed in a standard 0.18 μm CMOS process. The VCO utilizes active inductors to achieve coarse-tuning of the inductance and a [...] Read more.
In this paper, a wideband VCO that covers popular Long-Term Evolution (LTE) 0.7 GHz and LTE 2.6 GHz frequencies is designed and developed in a standard 0.18 μm CMOS process. The VCO utilizes active inductors to achieve coarse-tuning of the inductance and a compact chip area. Moreover, an active feedback resistor is introduced into the active inductor for fine-tuning of the inductance. The feedback resistor also affects the equivalent resistance of the active inductor; therefore, wide inductance tuning and low power consumption can be obtained by optimizing the resistor. The core area of the fabricated CMOS chip is merely 0.046 mm2, excluding all testing pads. With a 6.7~10.1 mW DC consumption, the measured oscillation frequencies range from 0.73 GHz to 3.1 GHz, which demonstrates a 123.8% tuning range. At the frequencies of interest, the measured phase noises are from −80.7 to −84.5 dBc/Hz at a 1 MHz offset frequency. Full article
(This article belongs to the Special Issue Analog/Mixed-Signal Integrated Circuit Design)
Show Figures

Figure 1

Previous Issue
Back to TopTop