Embedded Nano-Crystals: From Micro-Electronics to Electro-Optics Devices

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (25 November 2021) | Viewed by 6303

Special Issue Editors


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Guest Editor
Advanced Laboratory of Electro-Optics (ALEO), Applied Physics/Electro-Optics Engineering Department, Lev Academic Center – Jerusalem College of Technology (JCT), Israel
Interests: silicon photonics devices; quality and reliability engineering of devices and chips; enhancement of electro-optics measurement techniques

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Guest Editor
Faculty of Engineering, Bar-Ilan University, 52900 Ramat-Gan, Israel
Interests: super resolution; bio-photonics; electro-optical nano devices; silicon photonics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Looking at the evolution of the well-established silicon-based microelectronics industry, one can observe that we are approaching the limit of high-speed communication rates. According to Moore's law, the number of transistors in a dense integrated circuit doubles approximately every two years. This means that the total calculating ability of a chip also doubles every two years. Unfortunately, a few years ago, it was established that there might not be a way to follow Moore's law anymore, since the miniaturization of transistors increases their defects.

Looking forward to the next generations of high-speed computers, several alternatives are under investigation, all of which try to combine optical communication channels with the well-established silicon-based microelectronics industry. Since silicon is not replaceable – sand represents 28% of the planet – the challenge is to add optical properties to the existing electronic devices. The principal target is still integrating silicon photonics in a smart, elegant, and transparent way. To this end, and in light of the growing demand for high-speed processing and big data, several types of electro-optics components and photonic integrated circuits (PIC) have been designed, simulated, and fabricated.

Several techniques are under investigation to combine silicon-based electro-optic devices in the microelectronics industry. One of these techniques takes into account the creation of nano-crystals or nano-dots. These nano components are embedded in part of the electronic device’s layers, while creating some nano-dots of material, changing the basic properties of the layer, and enabling photon absorption as a function of crystal size, number, density, penetration depth, and other material parameters.

This Special Issue will publish articles, based on previous research and current work accentuating nano-crystal influence on electronic and electro-optic devices.

Dr. Avi Karsenty
Prof. Zeev Zalevsky
Guest Editors

Manuscript Submission Information

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Keywords

  • Embedded nano-crystals
  • Electro-optics devices
  • Micro-electronics devices
  • CMOS technology
  • High-speed devices
  • Tunable devices
  • Ion implantation
  • Nano-dots
  • Improved properties

Published Papers (2 papers)

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14 pages, 3302 KiB  
Article
Improving Compactness of 3D Metallic Microstructures Printed by Laser-Induced Forward Transfer
by Niv Gorodesky, Sharona Sedghani-Cohen, Ofer Fogel, Amir Silber, Maria Tkachev, Zvi Kotler and Zeev Zalevsky
Crystals 2021, 11(3), 291; https://doi.org/10.3390/cryst11030291 - 16 Mar 2021
Cited by 13 | Viewed by 2706
Abstract
Laser-induced forward transfer (LIFT) has been shown to be a useful technique for the manufacturing of micron-scale metal structures. LIFT is a high-resolution, non-contact digital printing method that can support the fabrication of complex shapes and multi-material structures in a single step under [...] Read more.
Laser-induced forward transfer (LIFT) has been shown to be a useful technique for the manufacturing of micron-scale metal structures. LIFT is a high-resolution, non-contact digital printing method that can support the fabrication of complex shapes and multi-material structures in a single step under ambient conditions. However, LIFT printed metal structures often suffer from inferior mechanical, electrical, and thermal properties when compared to their bulk metal counterparts, and often are prone to enhanced chemical corrosion. This is due mostly to their non-compact structures, which have voids and inter-droplet delamination. In this paper, a theoretical framework together with experimental results of achievable compactness limits is presented for a variety of metals. It is demonstrated that compactness limits depend on material properties and jetting conditions. It is also shown how a specific choice of materials can yield compact structures, for example, when special alloys are chosen along with a suitable donor construct. The example of printed amorphous ZrPd is detailed. This study contributes to a better understanding of the limits of implementing LIFT for the fabrication of metal structures, and how to possibly overcome some of these limitations. Full article
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16 pages, 4748 KiB  
Perspective
Embedded Silicon Nanoparticles as Enabler of a Novel CMOS-Compatible Fully Integrated Silicon Photonics Platform
by Alfredo A. González-Fernández, Mariano Aceves-Mijares, Oscar Pérez-Díaz, Joaquin Hernández-Betanzos and Carlos Domínguez
Crystals 2021, 11(6), 630; https://doi.org/10.3390/cryst11060630 - 31 May 2021
Cited by 6 | Viewed by 2853
Abstract
The historical bottleneck for truly high scale integrated photonics is the light emitter. The lack of monolithically integrable light sources increases costs and reduces scalability. Quantum phenomena found in embedded Si particles in the nanometer scale is a way of overcoming the limitations [...] Read more.
The historical bottleneck for truly high scale integrated photonics is the light emitter. The lack of monolithically integrable light sources increases costs and reduces scalability. Quantum phenomena found in embedded Si particles in the nanometer scale is a way of overcoming the limitations for bulk Si to emit light. Integrable light sources based in Si nanoparticles can be obtained by different CMOS (Complementary Metal Oxide Semiconductor) -compatible materials and techniques. Such materials in combination with Si3N4 photonic elements allow for integrated Si photonics, in which photodetectors can also be included directly in standard Si wafers, taking advantage of the emission in the visible range by the embedded Si nanocrystals/nanoparticles. We present the advances and perspectives on seamless monolithic integration of CMOS-compatible visible light emitters, photonic elements, and photodetectors, which are shown to be viable and promising well within the technological limits imposed by standard fabrication methods. Full article
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