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Crystals
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Metal–Semiconductor Photodetector
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Metal–Semiconductor Photodetector

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Hybrid and Composite Crystalline Materials".

Deadline for manuscript submissions: closed (10 May 2023) | Viewed by 3700

Special Issue Editors

Prof. Dr. Liming Wang

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Guest Editor
Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, China
Interests: epitaxial growth of group IV semiconductors; fabrication and characterization of optoelectronic devices
Prof. Dr. Huiyong Hu

E-Mail Website
Guest Editor
Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, China
Interests: optoelectronic properties of group IV devices; silicon photonics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Photodetectors have attracted increasing attention in the past few decades, primarily due to their wide applications in various purposes, such as image sensing, optical communication, biomedical imaging, and motion detection. Metal–semiconductor photodetectors have attracted much attention due to their figures of merit, including fabrication simplicity and direct compatibility with modern high-speed integrated circuitry. Recently, efforts have been made to improve the responsivity, detectivity, and other key parameters of photodetectors.

To bring additional attention to this area of research, this Special Issue highlights progress reports, reviews, and original research articles on “Metal–Semiconductor Photodetectors”; potential topics include, but are not limited to:

  • Manufacturing process for metal–semiconductor photodetectors.
  • Metallic nanostructures in metal–semiconductor photodetectors.
  • Carrier transport in metal–semiconductor photodetectors.
  • Internal gain mechanism in metal–semiconductor photodetectors.
  • Defects and dislocations near metal–semiconductor interfaces and their influence on photodetection properties.

Prof. Dr. Liming Wang
Prof. Dr. Huiyong Hu
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • carrier transport.
  • opto-electronic properties
  • internal gain mechanism
  • interface defect and dislocation
  • nanostructures
  • metal–semiconductor contact

Published Papers (2 papers)

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Research

6 pages, 1655 KiB  
Communication
The Anti-Reflection Coating Design for the Very-Long-Wave Infrared Si-Based Blocked Impurity Band Detectors
by Zuoru Dong, Yangzhou Zhou, Yulu Chen, Jiajia Tao, Wenhui Liu, Xiaowan Dai, Bingbing Wang, Yifei Wu and Xiaodong Wang
Crystals 2023, 13(1), 60; https://doi.org/10.3390/cryst13010060 - 29 Dec 2022
Cited by 5 | Viewed by 1410
Abstract
An anti-reflection coating on a back-illuminated 128 × 128 array Si-based blocked impurity band (BIB) detector in a very-long-wave infrared range was designed in this work. The reflectance and transmittance spectra of ZnS films with different thicknesses on intrinsic Si substrates were studied [...] Read more.
An anti-reflection coating on a back-illuminated 128 × 128 array Si-based blocked impurity band (BIB) detector in a very-long-wave infrared range was designed in this work. The reflectance and transmittance spectra of ZnS films with different thicknesses on intrinsic Si substrates were studied with a FDTD simulation and experiment. Compared to bare Si substrate, the reflectance of Si coated with 1.5, 2.0, 2.5, and 3.0 μm thick ZnS significantly decreased, while the transmittance increased in the range of 10.0~25.0 μm band. The transmittance enhancement ratio reached approximately 32%, 32%, 28%, and 29%, respectively. It was evidenced that the enhanced transmission at a specific wavelength was caused by the effective interference cancellation effect. Then, a 2.0 μm thick ZnS thin film was deposited on the backside of the 128 × 128 array Si-based BIB detector. The spectral responsivity of the detector increased significantly. Additionally, the blackbody responsivity increased by approximately 36%, suggesting that the ZnS film is an ideal anti-reflection material for VLWIR detectors in the range of 10.0~25.0 μm band. Full article
(This article belongs to the Special Issue Metal–Semiconductor Photodetector)
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10 pages, 2997 KiB  
Article
A Facile Centrifuge Coating Method for High-Performance CsPbBr3 Compact and Crack-Free Nanocrystal Thin Film Photodetector
by Phuong-Nam Tran, Ba-Duc Tran, Duy-Cuong Nguyen, Thi-Lan Nguyen, Van-Dang Tran and Thanh-Tung Duong
Crystals 2022, 12(5), 587; https://doi.org/10.3390/cryst12050587 - 22 Apr 2022
Cited by 2 | Viewed by 1975
Abstract
All-inorganic perovskite quantum dots (QDs), a promising semiconductor material, is suitable for new generation optoelectronic application. While there are many kinds of coating procedures for producing perovskite QDs peorovskite film, those methods require post-treatments and an additional dispersion support agent while still retaining [...] Read more.
All-inorganic perovskite quantum dots (QDs), a promising semiconductor material, is suitable for new generation optoelectronic application. While there are many kinds of coating procedures for producing perovskite QDs peorovskite film, those methods require post-treatments and an additional dispersion support agent while still retaining pinholes and cracks. In this work, we report a facile method to produce CsPbBr3 film on a pre-patterned Pt electrode using a centrifuge coating method for photodetector (PD) application. Compact and crack-free films with ~500 nm thick from various particle sizes of 8 nm, 12 nm, and >30 nm were achieved with a suitable ratio of toluene/ethyl acetate solvent for visible light photodetector application. The optimized device has an on/off ratio of 103, detectivity of 3 × 1012 Jones, and responsivity of 6 A/W. In comparison, the on/off ratio of the device fabricated by the centrifuge coating method was 102 times higher than by the drop-coating method. The PD performance exhibited considerable moisture stability at mild high ambient temperature with no encapsulation for more than two weeks. The results suggest that this is a potential method for fabricating all inorganic perovskite nano-semiconductor films for further optoelectronic application in photodetectors, LEDs, and solar cells. Full article
(This article belongs to the Special Issue Metal–Semiconductor Photodetector)
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