Integrated Circuit Research for Nanoscale Field-Effect Transistors

Dear Colleagues,

As the channel size of field-effect transistors (FETs) shrinks to the nanometer scale, there is increasing demand for atomic-layer materials to minimize the effects of short channels under extreme scaling. Since the proposal of graphene, the first monolayer of graphite, many researchers have developed novel nanomaterials such as two-dimensional chalcogenides and single-element two-dimensional materials on FET devices. These FETs fabricated using nanomaterials have become a hot research topic, and researchers are committed to improving their device performance and expanding their circuit applications.

To draw more attention to this research field, this Special Issue will comprehensively introduce the progress in FET device applications. The potential topics include, but are not limited to, nanomaterials in FET devices and the preparation, circuit design, and application of nano-FET devices. We invite authors to contribute original research and review articles covering the latest developments in aspects such as nanomaterial-based devices, sub-reliability, and material stability.

There are many issues related to the design, fabrication, and application of advanced field-effect transistors. It is my pleasure to invite you to share your expertise in this Special Issue. Full papers, communications, and reviews are all welcome.

Prof. Dr. Huiyong Hu
Guest Editor

Manuscript Submission Information

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• FETs
• nanomaterials
• nanointegrated circuits
• nano-semiconductor device
• channel effect
• simulation

Title: Mapping the Advances in VO2 Applications, Modelling, and Simulation in Microelectronics and Microsystems: A Post-2010 Review
Authors: Mahmoud Darwish
Affiliation: Department of Electron Devices, Budapest University of Technology and Economics, 1117 Budapest, Hungary
Abstract: Vanadium dioxide (VO2) stands out for its versatility in numerous applications, thanks to its unique metal-to-insulator reversible phase transition. This transition can be initiated by various stimuli, leading to significant alterations in the material's characteristics, including its resistivity and optical properties. As the interest in the material is growing year by year, the purpose of this review is to explore the trends and current state of progress on some of the applications proposed for VO2 in the field of microsystems using literature review methods. Some key applications identified are resistive sensors such as strain, temperature, light, gas concentration, thermal fluid flow sensors for microfluidics, and mechanical microactuators. Several critical challenges have been recognized in the field, including the expanded investigation of VO2based applications across multiple domains, exploring various methods to enhance device performance such as modifying the phase transition temperature, advancing the fabrication techniques for VO2 structures, and developing innovative modeling approaches. Current research in the field shows a variety of different microstructures and material combinations, leading to different sensor and actuator performance input ranges and output sensitivities. More work needs to be done in order to come up with more simply manufactured and modelled, robust and reliable sensors and actuators based on VO2.

Title: Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits
Authors: Zichao Ma1*, Meng Liang1, Nasrullah Wazir1, Changjian Zhou1*
Affiliation: 1School of Microelectronics, South China University of Technology
Abstract: As the traditional trajectory defined by Moore’s law encounters challenges, the paradigm of ever-evolving integrated circuit technology shifts to explore unconventional materials and architectures to sustain progress. Two-dimensional (2D) semiconductors, characterized by their atomic-scale thickness and exceptional electronic properties, have emerged as a beacon of promise in this quest for continued advancement of complementary field-effect transistor (FET) technology. The complementary circuit integration necessitates strategic engineering of both n-channel and p-channel 2D FETs to achieve symmetrical high performance. This intricate process mandates the realization of challenging device characteristics, including low contact resistance, precisely controlled doping schemes, elevated carrier mobility, and seamless incorporation of high-k dielectrics. Furthermore, the uniform growth of large-area 2D film is imperative to mitigate defect density, minimize device-to-device variation, and establish pristine interfaces within the integrated circuits. This review systematically examines the latest theoretical frameworks and experimental breakthroughs, with a focus on the device characteristics of 2D semiconductors in advanced complementary FET structures. It also extensively summarizes critical aspects such as the scalability and compatibility of 2D FET devices with existing manufacturing technologies. Additionally, the review analyzes the interplay among material characteristics, electronic properties, and device design, elucidating the synergistic relationships crucial for realizing efficient and high-performance 2D devices. These findings extend to potential integrated circuit applications in diverse fields, ranging from high-performance computing to emerging compute-in-memory technologies.