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Electronics
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Thin Film Transistors for Flexible Electronics
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Thin Film Transistors for Flexible Electronics

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Flexible Electronics".

Deadline for manuscript submissions: 16 December 2024 | Viewed by 3828

Special Issue Editor

Dr. Mohammad Masum Billah

E-Mail Website
Guest Editor
Department of Information Display, Advanced Display Research Center, Kyung Hee University, Seoul, Korea
Interests: LTPO TFT; oxide and LTPS TFT; mechanical aging behavior of flexible TFTs; flexible TFTs for sensor; display applications

Special Issue Information

Dear Colleagues,

Integration of Thin-film transistors (TFTs) onto flexible, stretchable, foldable, and rollable substrate is a challenging task to overcome for flexible electronics applications. Colleagues all over the world are performing extensive research on the flexible substrate material and related TFT engineering to make it compatible with the future electronic application.

There are several technological challenges to achieving true flexible electronics. These include process variations related to substrate preparation and the thin film process. Laser crystallization of silicon to achieve poly-si might damage the plastic substrate. Also, there is research on whether flexible organic substrate diffuses impurities into TFT active channel. Researchers over the world are trying to adopt TFT structure engineering to make it suitable for future flexible electronic applications. Comparatively, fabricating oxide semiconductors TFTs at low temperature and related low-temperature annealing meets the demand for the damage-free substrate. However, oxide TFTs still have reliability issues to overcome. Therefore, innovative minds are working to achieve stable flexible TFTs.

There are many issues regarding the design, fabrication, and applications of advanced flexible field effect transistors (oxide, LTPS, LTPO, etc.), and substrate engineering. Also, mechanical strain (stress, stretching, cyclic folding, rolling) induced aging and degradation mechanism is highly important to study. It is my pleasure to invite you to share your expertise in this Special Issue. Full papers, communications, and reviews are all welcome.

Dr. Mohammad Masum Billah
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • flexible transistors
  • flexible electronics
  • flexible LTPO
  • flexible substrate engineering
  • solution process TFT
  • device modeling
  • flexible TFTs for sensor application
  • large area flexible electronics

Published Papers (2 papers)

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Research

9 pages, 2152 KiB  
Article
High-Performance Amorphous InGaSnO Thin-Film Transistor with ZrAlOx Gate Insulator by Spray Pyrolysis
by Yeoungjin Chang, Ravindra Naik Bukke, Youngoo Kim, Kiwan Ahn, Jinbaek Bae and Jin Jang
Electronics 2023, 12(3), 688; https://doi.org/10.3390/electronics12030688 - 30 Jan 2023
Cited by 2 | Viewed by 1648
Abstract
Here, we report the high-performance amorphous gallium indium tin oxide (a-IGTO) thin-film transistor (TFT) with zirconium aluminum oxide (ZAO) gate insulator by spray pyrolysis. The Ga ratio in the IGTO precursor solution varied up to 20%. The spray pyrolyzed a-IGTO with a high-k [...] Read more.
Here, we report the high-performance amorphous gallium indium tin oxide (a-IGTO) thin-film transistor (TFT) with zirconium aluminum oxide (ZAO) gate insulator by spray pyrolysis. The Ga ratio in the IGTO precursor solution varied up to 20%. The spray pyrolyzed a-IGTO with a high-k ZAO gate insulator (GI) exhibits the field-effect mobility (μFE) of 16 cm2V−1s−1, threshold voltage (VTH) of −0.45 V subthreshold swing (SS) of 133 mV/dec., and ON/OFF current ratio of ~108. The optimal a-IGTO TFT shows excellent stability under positive-bias-temperature stress (PBTS) with a small ΔVTH shift of 0.35 V. The enhancements are due to the high film quality and fewer interfacial traps at the a-IGTO/ZAO interface. Therefore, the spray pyrolyzed a-IGTO TFT can be a promising candidate for flexible TFT in the next-generation display. Full article
(This article belongs to the Special Issue Thin Film Transistors for Flexible Electronics)
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15 pages, 2189 KiB  
Article
Design of Portable Self-Oscillating VCSEL-Pumped Cesium Atomic Magnetometer
by Kai Jin, Xuxing Geng, Zhi Liang, Wangwang Tang, Jianfeng Xiao, Heng Hu, Guangming Huang, Gaoxiang Li, Guoqing Yang and Shangqing Liang
Electronics 2022, 11(22), 3666; https://doi.org/10.3390/electronics11223666 - 9 Nov 2022
Cited by 4 | Viewed by 1836
Abstract
With the demand for fast response of magnetic field measurement and the development of laser diode technology, self-oscillating laser-pumped atomic magnetometers have become a new development trend. In this work, we designed a portable self-oscillating VCSEL-pumped Cs atom magnetometer, including the probe (optical [...] Read more.
With the demand for fast response of magnetic field measurement and the development of laser diode technology, self-oscillating laser-pumped atomic magnetometers have become a new development trend. In this work, we designed a portable self-oscillating VCSEL-pumped Cs atom magnetometer, including the probe (optical path) and circuits. The signal amplification and feedback loop of the magnetometer, VCSEL laser control unit, and atomic cell temperature control unit were realized. We tested the performance of the magnetometer in the metering station. Finally, The performance of the VCSEL-pumped magnetometer designed in this work was compared with that of a CS-3 lamp-pumped self-oscillating atomic magnetometer; their performance was found to be mostly in the same order of magnitude, while the power consumption of our magnetometer was 3 W less than that of the CS-3. This work represents an exploratory attempt to integrate and miniaturize a portable self-oscillating VCSEL-pumped Cs atomic magnetometer. Full article
(This article belongs to the Special Issue Thin Film Transistors for Flexible Electronics)
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