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Electronics
Special Issues
Optoelectronic Materials, Heterostructures and Devices
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Optoelectronic Materials, Heterostructures and Devices

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Optoelectronics".

Deadline for manuscript submissions: 15 June 2024 | Viewed by 2874

Special Issue Editors

Dr. Aobo Ren

E-Mail Website
Guest Editor
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
Interests: optoelectronics; compound semiconductors; lasers; light-emitting diodes; halide perovskites; optical engineering
Dr. Kai Shen

E-Mail Website
Guest Editor
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
Interests: semiconductors; nanophotonics; heterostructures; photodetectors; sensing devices; thin-film technology
Dr. Keren Li

E-Mail Website
Guest Editor
College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Interests: quantum algorithms; quantum optimization; control techniques; photonic quantum computing

Special Issue Information

Dear Colleagues,

The field of optoelectronics has seen rapid growth in recent years, driven by the demand for high-performance devices in applications such as sensing, imaging, communication, and energy harvesting. The development of novel materials, heterostructures, and device architectures has uncovered new opportunities for improving the efficiency and performance of these devices. 

This Special Issue covers the development of novel materials and their application in various optoelectronic devices, including photodetectors, light-emitting diodes (LEDs), lasers, solar cells, etc. Emphasis will be placed on the design, synthesis, and characterization of new materials and heterostructures, as well as their integration into functional devices.

Topics of interest include, but are not limited to, the following:

  • Novel optoelectronic materials, such as compound semiconductors, perovskites, colloidal quantum dots, and 2D materials;
  • Heterostructures and interfaces, such as quantum wells/superlattices and van der Waals heterostructures;
  • Simulation, fabrication, and optimization of optoelectronic devices, including photodetectors, LEDs, lasers, and solar cells;
  • Advanced characterization techniques for optoelectronic materials and devices, such as photoluminescence, transient absorption spectroscopy, and near-field scanning optical microscopy;
  • Integration of optoelectronic devices in sensing, imaging, communication, and energy harvesting;
  • Plasmonic materials, devices, and applications, including metamaterials and metasurfaces, spasers and plasmonic nanolasers, plasmonic photoelectronic conversion, and photocatalysis.
We hope that this Special Issue will provide a platform for researchers to share their latest findings and insights in the field of optoelectronic materials, heterostructures, and devices, and contribute to the development of this exciting and rapidly evolving field.

Dr. Aobo Ren
Dr. Kai Shen
Dr. Keren Li
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • optoelectronics
  • compound semiconductors
  • metal halide perovskites
  • 2D materials
  • heterostructures
  • photodetectors
  • light-emitting diodes
  • lasers
  • photovoltaics
  • plasmonics

Published Papers (3 papers)

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Research

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14 pages, 3052 KiB  
Article
Improving Device-to-Device Reproducibility of Light-Emitting Diodes Based on Layered Halide Perovskites
by Quang-Huy Do, Rémi Antony, Bernard Ratier and Johann Bouclé
Electronics 2024, 13(6), 1039; https://doi.org/10.3390/electronics13061039 - 11 Mar 2024
Viewed by 572
Abstract
Layered halide perovskites have emerged as a promising contender in solid-state lighting; however, the fabrication of perovskite light-emitting devices in laboratories usually experiences low device-to-device reproducibility since perovskite crystallization is highly sensitive to ambient conditions. Although device processing inside gloveboxes is primarily used [...] Read more.
Layered halide perovskites have emerged as a promising contender in solid-state lighting; however, the fabrication of perovskite light-emitting devices in laboratories usually experiences low device-to-device reproducibility since perovskite crystallization is highly sensitive to ambient conditions. Although device processing inside gloveboxes is primarily used to reduce the influence of oxygen and moisture, several extraneous variables, including thermal fluctuations in the inert atmosphere or contaminations from residual solvents, can destabilize the crystallization process and alter the properties of the emissive layers. Here, we examine typical experimental configurations used in research laboratories to deposit layered perovskite films in inert atmospheres and discuss their crucial influences on the formation of polycrystalline thin films. Our results demonstrate that fluctuations in the glovebox properties (concentrations of residual O2 and H2O or solvent traces), even in very short timescales, can negatively impact the consistency of the perovskite film formation, while thermal variation plays a relatively minor role in this phenomenon. Furthermore, the careful storage of chemical species inside the workstation is critical for reproducing high-quality perovskite layers. Consequently, when applying our most controlled environment for perovskite deposition, the photoluminescence lifetime of perovskite thin films shows a standard deviation of only 3%, whereas the reference set-up yields a 15% standard deviation. Regarding complete perovskite light-emitting diodes, the uncertainties in statistical luminance and EQE data are significantly reduced from 230% and 140% to 38% and 42%, respectively. Full article
(This article belongs to the Special Issue Optoelectronic Materials, Heterostructures and Devices)
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21 pages, 4152 KiB  
Article
Full-Range Static Method of Calibration for Laser Tracker
by Chang’an Hu, Fei Lv, Liang Xue, Jiangang Li, Xiaoyin Zhong and Yue Xu
Electronics 2023, 12(22), 4709; https://doi.org/10.3390/electronics12224709 - 20 Nov 2023
Viewed by 660
Abstract
This paper focuses on the challenge of the inability to accurately calibrate the static measurement of a laser tracker across the full scale. To address this issue, this paper proposes to add a hollow corner cube prism on a 50 m high-precision composite [...] Read more.
This paper focuses on the challenge of the inability to accurately calibrate the static measurement of a laser tracker across the full scale. To address this issue, this paper proposes to add a hollow corner cube prism on a 50 m high-precision composite guide rail to achieve a double-range measurement of the laser tracker. Data analysis indicated that, in the 77 m identical-directional double-range measurement experiment, the maximum indication error of a single-beam laser interferometer was −29.5 μm, and that of a triple-beam laser interferometer was 14.6 μm, and the measurement indication error was obviously small when the Abbe error was eliminated. The single-point repeatability of the tracker was 0.9 μm. In the 50 m identical-directional verification experiment, the results of the direct measurement outperformed those of the double-range measurement, and the indication errors under standard conditions were −4.0 μm and −8.9 μm, respectively. Overall, the method used in the experiment satisfies the requirements of the laser tracker. In terms of the identical-directional measurement, the measurement uncertainty of the tracker indication error is U ≈ 1.0 μm + 0.2L (k = 2) L = (0~77 m). The proposed method also provides insights for length measurements using other high-precision measuring instruments. Full article
(This article belongs to the Special Issue Optoelectronic Materials, Heterostructures and Devices)
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Review

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27 pages, 6708 KiB  
Review
Organic Light-Emitting Diodes with Ultrathin Emitting Nanolayers
by Yubu Zhou, Huayu Gao, Jing Wang, Fion Sze Yan Yeung, Shenghuang Lin, Xianbo Li, Shaolin Liao, Dongxiang Luo, Hoi Sing Kwok and Baiquan Liu
Electronics 2023, 12(14), 3164; https://doi.org/10.3390/electronics12143164 - 21 Jul 2023
Viewed by 1246
Abstract
Organic light-emitting diodes (OLEDs) are promising for displays and lighting technologies because of their excellent advantages, such as high efficiency, high luminance, low power consumption, light weight, and flexibility. In recent years, ultrathin emitting nanolayers (UENs) have been used to develop OLEDs without [...] Read more.
Organic light-emitting diodes (OLEDs) are promising for displays and lighting technologies because of their excellent advantages, such as high efficiency, high luminance, low power consumption, light weight, and flexibility. In recent years, ultrathin emitting nanolayers (UENs) have been used to develop OLEDs without the doping technique, which can simplify device structure, reduce material loss, achieve good exciton utilization, and realize comparable performance to doped devices such as the external quantum efficiency of 28.16%, current efficiency of 63.84 cd/A, and power efficiency of 76.70 Lm/W for white OLEDs. In this review, we comprehensively summarize the recent progress in the field of UEN-based OLEDs. Firstly, the host–guest-doped OLEDs and doping-free UEN-based OLEDs are compared. Then, various effective approaches for designing UEN-based OLEDs are presented, including both monochromatic and white devices. In particular, the properties of materials, the design of device structures, and the main working mechanisms of UEN-based OLEDs are highlighted. Finally, an outlook on the future development of UEN-based OLEDs is provided. Full article
(This article belongs to the Special Issue Optoelectronic Materials, Heterostructures and Devices)
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