Special Issue "Spintronics"
A special issue of Materials (ISSN 1996-1944).
Deadline for manuscript submissions: closed (30 June 2014)
Prof. Dr. Irene D'Amico
Spintronics – or spin-electronics – is an emerging technology which aims to revolutionize traditional electronics by combining the well-known functionalities derived from the charge of carriers (usually electrons or “holes”) with the properties of their spin degrees of freedom. These can be exploited by engineering interactions between spins and electric or magnetic fields. Alternatively spin behaviour can be influenced by the environment offered by different materials, or by constraints due to the system geometry, or by its patterning with nano-structures.
‘Spintronics’ encompasses by now many different subfields and interlaces with spin-based quantum information. While valuable progress and discoveries have been made so far, important open questions remain, from optimizing spin injection in semiconductor device elements to improving understanding and control of spin dynamics and coherence. This special issue focuses on this mixture of prospective applications and open fundamental problems to provide exciting science and technology for many years to come.
Dr. Irene D'Amico
Manuscript Submission Information
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- spin injection
- spin transport
- spin coherence
- spin diffusion
- spin galvanic effect
- spin Seebeck effect
- spin Coulomb drag
- spin Hall effect
- spin torque
- magnetic domain walls
- magnetic semiconductors
- topological insulators
- quantum information
- magnetic nanoparticles
- magnetic recording
- spin orbit coupling
Title: Topological defects in Topological Insulators and bound states at Topological Superconductor vortices
Authors: V. Parente1,2,3, G. Campagnano2, A. Tagliacozzo1,2 and F. Guinea3
Affiliations: 1 Università degli studi di Napoli “Federico II”, Napoli, Italy; 2 CNR-SPIN, Napoli, Italy; 3 Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, Spain
Abstract: Scattering of Dirac electrons by topological defects and bound states have been proposed as the most relevant source of resistance in graphene  and at the boundary surfaces of three dimensional Topological Insulators (3D-TI). Striking enough, when a 3D-TI is proximized by a superconductor, a vortex can bind a Majorana fermionic quasiparticle at the interface .
We will discuss the electron cross section for intravalley scattering at an edge dislocation in graphene and its contribution to the resistivity r within the Boltzmann theory of transport, including corrections coming from the local stress. The result will be compared to the resistivity induced by a localized gaussian bump , curving the surface. The long wavelength continuous limit will be used throughout. The unifying scheme of the Dirac equation on a curved space[4,5] allows us to consider topological point-like defects and bumps for an unrelaxed lattice, on the same foot. While r is proportional to the carrier concentration n when electrons scatter off a bump, an edge dislocation provides the expected inverse dependence rµn-1 . Smooth potentials are likely not to change the isospin and the valley of the scattering electrons, nor their energy spectrum drastically, unless the strain produces gaps or zero energy states[7,8].
Next we present the solution for a bound state at a screw disclination in a two band 3D-TI like Bi2Se3. When the TI is proximized by a superconductor and a vortex pierces the TI, a bound state forms at the interfaces in the vortex core, which acts in analogy with the singularity of a screw disclination. If the parity of the order parameter of the superconductor is even, the bound state excitation is a Majorana bound state. This is not the case if the parity is odd .
 M. I. Katsnelson, F. Guinea and A. K. Geim, Phys.Rev. B 2009, 79, 195426.
 L. Fu and C.L. Kane, Phys. Rev. Lett. 2008, 100, 096407.
 V. Parente, P. Vitale, A. Tagliacozzo and F. Guinea, unpublished.
 F. De Juan, A. Cortijo and M.A. Vozmediano, Phys. Rev. B 2007, 76, 165409.
 V. Parente, P. Lucignano, P. Vitale, A. Tagliacozzo and F. Guinea, Phys. Rev. B 2011, 83, 075424.
 F.Guinea, J. Low. Temp. Phys.2008, 153, 359.
 V.M. Pereira, A.H. Castro Neto, and N.M.R. Peres, Phys. Rev. B 2009, 80, 045401.
 F. Guinea, M. I. Katsnelson and A. K. Geim, Nat.Phys. 2010, 6, 30.
 A. Tagliacozzo, P. Lucignano and F. Tafuri, Phys. Rev. B 2012, 86, 045435.
Keywords: Dirac electrons; topological effects; two band topological insulators; Majorana bound state