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Micromachines
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Semiconductors and Nanostructures for Electronics and Photonics, Second Edition
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Semiconductors and Nanostructures for Electronics and Photonics, Second Edition

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: closed (30 April 2024) | Viewed by 2726

Special Issue Editor

Dr. Krishna Prasad Dhakal

E-Mail Website
Guest Editor
Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
Interests: 2D materials; lattice engineering; twist-optics; electronic properties; photoluminescence and raman spectroscopy
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Multi-dimensional including zero- to three-dimensional materials have been studied for photonic applications. Recently, two-dimensional flakes of transition metal chalcogenides have been shown to exhibit exceptional electronic properties that must be understood in order to provide the framework for modern electronic and photonic quantum technologies, such as superconductivity, charge density wave (CDW) state, metal insulator transition, ferromagnetism, correlated insulation, spin and valley polarization, exciton condensate state, etc. According to ongoing research, the critical temperature for these quantum physical phenomena lies in variable cryogenic range (~1~200 K), which is one of the hurdles in employing 2D materials for real-world practical applications. Now, it is necessary to realize the utility based on 2D materials in various quantum technologies by increasing the critical temperature of these quantum states in 2D materials. As we all know, these days, discovering 2D magnets and superconductors that are accessible at room temperature is a quickly growing research interest. The worldwide quest for more information on this topic is ongoing. Among them, doping 2D materials twisting between layers are recognized for customizing a wide range of fundamental optical and electrical properties to the atomically thin TMD films, in particular, doping-induced generation of the multi-exciton states, superconductivity, and ferromagnetism, to distinct phase transitions, are ideal for a wide range of optoelectronic applications, as well as the realization of quantum mechanical phenomena that were previously just theoretical.

We look forward to receiving your submissions!

Dr. Krishna Prasad Dhakal
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • 2D materials
  • doping
  • twisting
  • exciton
  • phonon
  • quantum states
  • critical temperature

Published Papers (3 papers)

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Research

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11 pages, 2452 KiB  
Article
Solution Process-Based Thickness Engineering of InZnO Semiconductors for Oxide Thin-Film Transistors with High Performance and Stability
by Xuan Zhang and Sung-Woon Cho
Micromachines 2024, 15(2), 193; https://doi.org/10.3390/mi15020193 - 27 Jan 2024
Viewed by 800
Abstract
To fabricate oxide thin-film transistors (TFTs) with high performance and excellent stability, preparing high-quality semiconductor films in the channel bulk region and minimizing the defect states in the gate dielectric/channel interfaces and back-channel regions is necessary. However, even if an oxide transistor is [...] Read more.
To fabricate oxide thin-film transistors (TFTs) with high performance and excellent stability, preparing high-quality semiconductor films in the channel bulk region and minimizing the defect states in the gate dielectric/channel interfaces and back-channel regions is necessary. However, even if an oxide transistor is composed of the same semiconductor film, gate dielectric/channel interface, and back channel, its electrical performance and operational stability are significantly affected by the thickness of the oxide semiconductor. In this study, solution process-based nanometer-scale thickness engineering of InZnO semiconductors was easily performed via repeated solution coating and annealing. The thickness-controlled InZnO films were then applied as channel regions, which were fabricated with almost identical film quality, gate dielectric/channel interface, and back-channel conditions. However, excellent operational stability and electrical performance suitable for oxide TFT backplane was only achieved using an 8 nm thick InZnO film. In contrast, the ultrathin and thicker films exhibited electrical performances that were either very resistive (high positive VTh and low on-current) or excessively conductive (high negative VTh and high off-current). This investigation confirmed that the quality of semiconductor materials, solution process design, and structural parameters, including the dimensions of the channel layer, must be carefully designed to realize high-performance and high-stability oxide TFTs. Full article
(This article belongs to the Special Issue Semiconductors and Nanostructures for Electronics and Photonics, Second Edition)
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10 pages, 4775 KiB  
Article
Performance Investigations of InAs/InP Quantum-Dash Semiconductor Optical Amplifiers with Different Numbers of Dash Layers
by Youxin Mao, Xiaoran Xie, Chunying Song, Zhenguo Lu, Philip J. Poole, Jiaren Liu, Mia Toreja, Yang Qi, Guocheng Liu, Pedro Barrios, Daniel Poitras, John Weber, Ping Zhao, Martin Vachon, Mohamed Rahim, Penghui Ma, Silas Chen and Ahmad Atieh
Micromachines 2023, 14(12), 2230; https://doi.org/10.3390/mi14122230 - 12 Dec 2023
Viewed by 718
Abstract
We present here a performance comparison of quantum-dash (Qdash) semiconductor amplifiers (SOAs) with three, five, eight, and twelve InAs dash layers grown on InP substrates. Other than the number of Qdash layers, the structures were identical. The eight-layer Qdash SOA gave the highest [...] Read more.
We present here a performance comparison of quantum-dash (Qdash) semiconductor amplifiers (SOAs) with three, five, eight, and twelve InAs dash layers grown on InP substrates. Other than the number of Qdash layers, the structures were identical. The eight-layer Qdash SOA gave the highest amplified spontaneous emission power (4.3 dBm) and chip gain (26.4 dB) at 1550 nm, with a 300 mA CW bias current and at 25 °C temperature, while SOAs with fewer Qdash layers (for example, three-layer Qdash SOA), had a wider ASE bandwidth (90 nm) and larger 3 dB gain saturated output power (18.2 dBm) in a shorter wavelength range. The noise figure (NF) of the SOAs increased nearly linearly with the number of Qdash layers. The longest gain peak wavelength of 1570 nm was observed for the 12-layer Qdash SOA. The most balanced performance was obtained with a five-layer Qdash SOA, with a 25.4 dB small-signal chip gain, 15.2 dBm 3 dB output saturated power, and 5.7 dB NF at 1532 nm, 300 mA and 25 °C. These results are better than those of quantum well SOAs reported in a recent review paper. The high performance of InAs/InP Qdash SOAs with different Qdash layers shown in this paper could be important for many applications with distinct requirements under uncooled scenarios. Full article
(This article belongs to the Special Issue Semiconductors and Nanostructures for Electronics and Photonics, Second Edition)
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Review

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35 pages, 6611 KiB  
Review
Recent Advances in Broadband Photodetectors from Infrared to Terahertz
by Wei Si, Wenbin Zhou, Xiangze Liu, Ke Wang, Yiming Liao, Feng Yan and Xiaoli Ji
Micromachines 2024, 15(4), 427; https://doi.org/10.3390/mi15040427 - 22 Mar 2024
Viewed by 990
Abstract
The growing need for the multiband photodetection of a single scene has promoted the development of both multispectral coupling and broadband detection technologies. Photodetectors operating across the infrared (IR) to terahertz (THz) regions have many applications such as in optical communications, sensing imaging, [...] Read more.
The growing need for the multiband photodetection of a single scene has promoted the development of both multispectral coupling and broadband detection technologies. Photodetectors operating across the infrared (IR) to terahertz (THz) regions have many applications such as in optical communications, sensing imaging, material identification, and biomedical detection. In this review, we present a comprehensive overview of the latest advances in broadband photodetectors operating in the infrared to terahertz range, highlighting their classification, operating principles, and performance characteristics. We discuss the challenges faced in achieving broadband detection and summarize various strategies employed to extend the spectral response of photodetectors. Lastly, we conclude by outlining future research directions in the field of broadband photodetection, including the utilization of novel materials, artificial microstructure, and integration schemes to overcome current limitations. These innovative methodologies have the potential to achieve high-performance, ultra-broadband photodetectors. Full article
(This article belongs to the Special Issue Semiconductors and Nanostructures for Electronics and Photonics, Second Edition)
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