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Micromachines
Special Issues
2D Materials: Devices and Functionalities
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2D Materials: Devices and Functionalities

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D：Materials and Processing".

Deadline for manuscript submissions: closed (15 December 2023) | Viewed by 3535

Special Issue Editor

Dr. Yao Wen

E-Mail Website
Guest Editor
School of Physics and Technology, Wuhan University, Wuhan 430072, China
Interests: synthesis of 2D materials; 2D electronic and optoelectronic devices; 2D magnetic materials and devices

Special Issue Information

Dear Colleagues,

In two-dimensional (2D) materials with dangling-bond-free surfaces free from defects, the charge carriers are less prone to scattering. Each layer of 2D materials is weakly bound to neighbouring layers by van der Waals (vdW) interactions, which allow the arbitrary stacking of different 2D materials to form vdW heterostructures without considering the lattice mismatch. Different 2D materials with diverse properties can be combined for multifunctional devices. Two-dimensional materials have also exhibited intriguing physical properties at an atomically thin scale. Novel 2D materials, such as 2D transition metal disulfide materials, magnetic materials, ferroelectric materials, etc., are regarded as potential candidates for next-generation integrated circuits. Silicon-based transistors are faced with the scale-down dilemma, and these advantages of 2D materials are satisfied for More-than-Moore and Beyond CMOS technologies. In short, functional devices based on 2D materials with intriguing properties may be used as the building blocks for integrated circuits in the post-Moore era. Therefore, this Special Issue seeks to showcase research papers, communications, and review articles that focus on: the novel design, synthesis and processing techniques of 2D materials; electronic and optoelectronics devices of 2D materials; and magnetic and ferroelectric materials.

Dr. Yao Wen
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • 2D materials
  • 2D electronic devices
  • 2D optoelectronic devices
  • 2D spintronic devices

Published Papers (3 papers)

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Research

18 pages, 34084 KiB  
Communication
Inert-Atmosphere Microfabrication Technology for 2D Materials and Heterostructures
by Aliaksandr Duleba, Mikhail Pugachev, Mark Blumenau, Sergey Martanov, Mark Naumov, Aleksey Shupletsov and Aleksandr Kuntsevich
Micromachines 2024, 15(1), 94; https://doi.org/10.3390/mi15010094 - 31 Dec 2023
Viewed by 1198
Abstract
Most 2D materials are unstable under ambient conditions. Assembly of van der Waals heterostructures in the inert atmosphere of the glove box with ex situ lithography partially solves the problem of device fabrication out of unstable materials. In our paper, we demonstrate an [...] Read more.
Most 2D materials are unstable under ambient conditions. Assembly of van der Waals heterostructures in the inert atmosphere of the glove box with ex situ lithography partially solves the problem of device fabrication out of unstable materials. In our paper, we demonstrate an approach to the next-generation inert-atmosphere (nitrogen, <20 ppm oxygen content) fabrication setup, including optical contact mask lithography with a 2 μm resolution, metal evaporation, lift-off and placement of the sample to the cryostat for electric measurements in the same inert atmosphere environment. We consider basic construction principles, budget considerations, and showcase the fabrication and subsequent degradation of black-phosphorous-based structures within weeks. The proposed solutions are surprisingly compact and inexpensive, making them feasible for implementation in numerous 2D materials laboratories. Full article
(This article belongs to the Special Issue 2D Materials: Devices and Functionalities)
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10 pages, 3656 KiB  
Article
Controllable Carrier Doping in Two-Dimensional Materials Using Electron-Beam Irradiation and Scalable Oxide Dielectrics
by Lu Wang, Zejing Guo, Qing Lan, Wenqing Song, Zhipeng Zhong, Kunlin Yang, Tuoyu Zhao, Hai Huang, Cheng Zhang and Wu Shi
Micromachines 2023, 14(11), 2125; https://doi.org/10.3390/mi14112125 - 19 Nov 2023
Cited by 1 | Viewed by 1331
Abstract
Two-dimensional (2D) materials, characterized by their atomically thin nature and exceptional properties, hold significant promise for future nano-electronic applications. The precise control of carrier density in these 2D materials is essential for enhancing performance and enabling complex device functionalities. In this study, we [...] Read more.
Two-dimensional (2D) materials, characterized by their atomically thin nature and exceptional properties, hold significant promise for future nano-electronic applications. The precise control of carrier density in these 2D materials is essential for enhancing performance and enabling complex device functionalities. In this study, we present an electron-beam (e-beam) doping approach to achieve controllable carrier doping effects in graphene and MoS2 field-effect transistors (FETs) by leveraging charge-trapping oxide dielectrics. By adding an atomic layer deposition (ALD)-grown Al2O3 dielectric layer on top of the SiO2/Si substrate, we demonstrate that controllable and reversible carrier doping effects can be effectively induced in graphene and MoS2 FETs through e-beam doping. This new device configuration establishes an oxide interface that enhances charge-trapping capabilities, enabling the effective induction of electron and hole doping beyond the SiO2 breakdown limit using high-energy e-beam irradiation. Importantly, these high doping effects exhibit non-volatility and robust stability in both vacuum and air environments for graphene FET devices. This methodology enhances carrier modulation capabilities in 2D materials and holds great potential for advancing the development of scalable 2D nano-devices. Full article
(This article belongs to the Special Issue 2D Materials: Devices and Functionalities)
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10 pages, 1284 KiB  
Article
Enhanced Graphene Based Electronically Tunable Phase Shifter
by Muhammad Yasir, Fabio Peinetti and Patrizia Savi
Micromachines 2023, 14(10), 1877; https://doi.org/10.3390/mi14101877 - 29 Sep 2023
Cited by 2 | Viewed by 627
Abstract
In this work, an enhanced tunable microwave phase shifter is presented. The phase shifter consists of three short circuited stubs and a tapered line. The stubs are connected to graphene pads. Graphene’s tunable conductivity is varied by a DC voltage. This in turn [...] Read more.
In this work, an enhanced tunable microwave phase shifter is presented. The phase shifter consists of three short circuited stubs and a tapered line. The stubs are connected to graphene pads. Graphene’s tunable conductivity is varied by a DC voltage. This in turn causes a reactance variation at the input of the tapered line, which causes a phase variation. The physical parameters of the stubs are optimized for a maximum reactance variation by the help of analytical models, circuit and full wave simulations. Measurements of an optimized prototype are performed and a dynamic phase variation of 59∘ is obtained with an amplitude variation of less than 1 dB. Full article
(This article belongs to the Special Issue 2D Materials: Devices and Functionalities)
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