Recent Progress in 2D Semiconductor Materials and Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: 31 December 2024 | Viewed by 887

Special Issue Editors


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Guest Editor
School of Microelectronics, Xidian University, Xi’an 710071, China
Interests: 2D semiconductor materials and devices; first-principles calculations; semiconductor device reliability; piezoelectric materials and devices
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Guest Editor
Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
Interests: 2D semiconductor materials and devices; thermal management; micro/nanoscale heat transfer
Special Issues, Collections and Topics in MDPI journals

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Guest Editor
School of Microelectronics, Xidian University, Xi’an 710071, China
Interests: semiconductor; sensors; artificial intelligence chips; optoelectronic computing

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Guest Editor
School of Microelectronics, Xidian University, Xi’an 710071, China
Interests: Piezoelectric materials and transducers; Integrated circuits; Design and fabrication of microsystem; Intelligent optimization algorithms and its applications
Special Issues, Collections and Topics in MDPI journals

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Guest Editor
School of Science, Xi’an Polytechnic University, Xi’an 710048, China
Interests: III-nitride semiconductors; 2D semiconductor materials and devices; luminescence materials and devices

Special Issue Information

Dear Colleagues,

In this Special Issue, “Recent Progress in 2D Semiconductor Materials and Devices”, we will focus on the field of 2D semiconductor materials in terms of their synthesis, fundamental properties, and the design and fabrication of devices. These materials have been intensively studied in recent years due to their unique physicochemical properties, giving them promising potential in electronics, optoelectronics, batteries, and biomedicine applications. The range of available materials include single-element layers, such as graphene, phosphorene, arsenene, antimonene, and bismuthine, and layered materials with mixed elemental compositions, such as transition metal dichalcogenides, MXenes, and van der Waals heterostructures. In our Special Issue, we welcome novel works on 2D semiconductor materials and their device applications that discuss the most recent breakthroughs and potential impacts in related research fields. All interested researchers are invited to contribute original research articles, short communications, and review articles. Manuscripts will be internationally peer-reviewed. Topics we specifically seek to cover include but are not limited to the following:

  • Simulation and design methods of 2D semiconductor materials and their devices;
  • Novel methods for the preparation of 2D semiconductor materials and their devices;
  • Novel physicochemical properties of 2D semiconductor materials and their devices;
  • Novel photoelectrical properties of 2D semiconductor materials and their devices;
  • Novel quantum devices and performance based on 2D semiconductor materials;
  • Advanced electronic device structure and MOSFET performance based on 2D semiconductor materials;
  • Novel studies in interdisciplinary applications of 2D semiconductor materials;
  • Promising applications of 2D semiconductor materials and their devices;
  • Novel synthesis and fabrication of 2-D heterostructures and mixed-dimensional heterostructures.

Dr. Tianlong Zhao
Prof. Dr. Guoqing Xin
Dr. Shulong Wang
Dr. Dongdong Chen
Dr. Dezhong Cao
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • 2D semiconductor materials
  • advanced processes
  • photodetectors
  • quantum devices
  • MOSFET devices
  • semiconductor device reliability
  • first-principles calculations
  • modelling and simulation
  • intelligent design

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Published Papers (1 paper)

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Research

9 pages, 7239 KiB  
Article
Proton-Irradiation Effects and Reliability on GaN-Based MIS-HEMTs
by Zixin Zhen, Chun Feng, Hongling Xiao, Lijuan Jiang and Wei Li
Micromachines 2024, 15(9), 1091; https://doi.org/10.3390/mi15091091 - 29 Aug 2024
Viewed by 535
Abstract
A comprehensive study of proton irradiation reliability on a bilayer dielectrics SiNx/Al2O3 MIS-HEMT, the common Schottky gate HEMT, and a single dielectric layer MIS-HEMT with SiNx and with Al2O3 for comparison is conducted in [...] Read more.
A comprehensive study of proton irradiation reliability on a bilayer dielectrics SiNx/Al2O3 MIS-HEMT, the common Schottky gate HEMT, and a single dielectric layer MIS-HEMT with SiNx and with Al2O3 for comparison is conducted in this paper. Combining the higher displacement threshold energy of Al2O3 with the better surface passivation of the SiNx layer, the bilayer dielectrics MIS-HEMT presents much smaller degradation of structural materials and of device electrical performance after proton irradiation. Firstly, the least of the defects caused by irradiation suggesting the smallest structural material degradation is observed in the bilayer dielectrics MIS-HEMT through simulations. Then, DC and RF electrical performance of four kinds of devices before and after proton irradiation are studied through simulation and experiments. The smallest threshold voltage degradation rate, the smallest maximum on-current degradation and Gm degradation, the largest cut-off frequency, and the lowest cut-off frequency degradation are found in the bilayer dielectrics MIS-HEMT among four kinds of devices. The degradation results of both structural materials and electrical performance reveal that the bilayer dielectrics MIS-HEMT performs best after irradiation and had better radiation resilience. Full article
(This article belongs to the Special Issue Recent Progress in 2D Semiconductor Materials and Devices)
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