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Micromachines
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Infrared Nanophotonics: Materials, Devices and Applications, Volume II
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Infrared Nanophotonics: Materials, Devices and Applications, Volume II

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A：Physics".

Deadline for manuscript submissions: closed (30 September 2021) | Viewed by 8077

Special Issue Editor

Prof. Dr. Tadaaki Nagao

E-Mail Website
Guest Editor
1. Photonics Nano-Engineering Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0047, Ibaraki, Japan
2. Nano-System Photonics Group, Department of Condensed Matter Physics, Graduate School of Science, Hokkaido University, Sapporo, Japan
Interests: surface and interface physics; nanoplasmonics; energy nano-materials/devices
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Infrared light radiates from almost all matter on earth and its strategic use will be an important issue for the enhancement of human life and the sustainable development of modern industry.  In this Special Issue, following the success of Volume I, we again invite the submissions from researchers who are working on infrared nanophotonics based on MEMS/NEMS, and nanomaterials science, ranging from materials synthesis, device fabrications, to theoretical analyses of surface electromagnetic field as well as heat transfer in nano/micro systems. Important topics of interest can be wavelength-selective infrared emitters and detectors where we can see rapid development in the field of nano-plasmonics and metamaterials. We also encourage contribution from nano-materials science field and their devices, such as from 2D-layered transition metal dichalogenides (TMDCs), graphene or carbon nanotube (CNT)-based infrared detectors/emitters, as well as nanostructured narrow-band gap semiconductors. We warmly encourage submissions from researchers who are actively working on these topics.

Prof. Dr. Tadaaki Nagao
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Thermal radiation
  • Infrared detectors
  • Infrared emitters
  • Plasmonics
  • Metamaterials
  • Nanomaterials

Related Special Issue

Published Papers (2 papers)

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Research

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7 pages, 1998 KiB  
Article
Effect of Hole Shift on Threshold Characteristics of GaSb-Based Double-Hole Photonic-Crystal Surface-Emitting Lasers
by Yu-Hsun Huang, Zi-Xian Yang, Su-Ling Cheng, Chien-Hung Lin, Gray Lin, Kien-Wen Sun and Chien-Ping Lee
Micromachines 2021, 12(5), 468; https://doi.org/10.3390/mi12050468 - 21 Apr 2021
Cited by 4 | Viewed by 1620
Abstract
Photonic-crystal (PC) surface-emitting lasers (SELs) with double-hole structure in the square-lattice unit cell were fabricated on GaSb-based type-I InGaAsSb/AlGaAsSb heterostructures. The relative shift of two holes was varied within one half of the lattice period. We measured the lasing wavelengths and threshold pumping [...] Read more.
Photonic-crystal (PC) surface-emitting lasers (SELs) with double-hole structure in the square-lattice unit cell were fabricated on GaSb-based type-I InGaAsSb/AlGaAsSb heterostructures. The relative shift of two holes was varied within one half of the lattice period. We measured the lasing wavelengths and threshold pumping densities of 16 PC-SELs and investigated their dependence on the double-hole shift. The experimental results were compared to the simulated wavelengths and threshold gains of four band-edge modes. The measured lasing wavelength did not exhibit switching of band-edge mode; however, the calculated lowest threshold mode switched as the double-hole shift exceeded one quarter of the lattice period. The identification of band-edge lasing mode revealed that modal gain discrimination was dominated over by its mode wavelength separation. Full article
(This article belongs to the Special Issue Infrared Nanophotonics: Materials, Devices and Applications, Volume II)
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Review

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30 pages, 6721 KiB  
Review
Device Architecture for Visible and Near-Infrared Photodetectors Based on Two-Dimensional SnSe2 and MoS2: A Review
by Emma P. Mukhokosi, Gollakota V.S. Manohar, Tadaaki Nagao, Saluru B. Krupanidhi and Karuna K. Nanda
Micromachines 2020, 11(8), 750; https://doi.org/10.3390/mi11080750 - 31 Jul 2020
Cited by 19 | Viewed by 5951
Abstract
While band gap and absorption coefficients are intrinsic properties of a material and determine its spectral range, response time is mainly controlled by the architecture of the device and electron/hole mobility. Further, 2D-layered materials such as transition metal dichalogenides (TMDCs) possess inherent and [...] Read more.
While band gap and absorption coefficients are intrinsic properties of a material and determine its spectral range, response time is mainly controlled by the architecture of the device and electron/hole mobility. Further, 2D-layered materials such as transition metal dichalogenides (TMDCs) possess inherent and intriguing properties such as a layer-dependent band gap and are envisaged as alternative materials to replace conventional silicon (Si) and indium gallium arsenide (InGaAs) infrared photodetectors. The most researched 2D material is graphene with a response time between 50 and 100 ps and a responsivity of <10 mA/W across all wavelengths. Conventional Si photodiodes have a response time of about 50 ps with maximum responsivity of about 500 mA/W at 880 nm. Although the responsivity of TMDCs can reach beyond 104 A/W, response times fall short by 3–6 orders of magnitude compared to graphene, commercial Si, and InGaAs photodiodes. Slow response times limit their application in devices requiring high frequency. Here, we highlight some of the recent developments made with visible and near-infrared photodetectors based on two dimensional SnSe2 and MoS2 materials and their performance with the main emphasis on the role played by the mobility of the constituency semiconductors to response/recovery times associated with the hetero-structures. Full article
(This article belongs to the Special Issue Infrared Nanophotonics: Materials, Devices and Applications, Volume II)
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