New Advances in Ionic-Drift Resistive Switching Memory and Neuromorphic Applications
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "E:Engineering and Technology".
Deadline for manuscript submissions: closed (27 February 2022) | Viewed by 36406
Special Issue Editors
Interests: resistive switching device; ReRAM; neuromorphic computing; electronic synapse; semiconductor memory; AI
Special Issues, Collections and Topics in MDPI journals
Interests: memristor; neuromorphic computing; in memory computing; RRAM; resistive switching
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
This Special Issue is open to valuable contributions in the area of emerging memory devices and their applications, such as ReRAM, CBRAM, Schottky diodes, and other memories based on the resistive switching phenomenon. The Special Issue will cover the fundamentals of ionic-driven resistive switching behavior found in emerging memory devices that are designed and fabricated via thin-film deposition techniques, such as ALD, PVD, CVD, thermal oxidation, drop-casting, spin-coating, electrodeposition, sol–gel, etc. It will provide leading research on recent developments in fabrication, miniaturization, and applications of single- and complex-based resistive switching memories utilized as a general memory for its extension to perform synapse, neuron, and other neuromorphic functioning. Freshly given explanations on memory ionic-driven mechanisms would help to tune and benefit the state of the art of resistive switching technology, specifically applicable as a memory or synapse device. Overall, the Special Issue is interested in original research that focuses on new concepts, ideas, and recent progress, covering thin-film materials, memory devices, in-depth physics of the resistive switching mechanism, memory crossbar systems, neuromorphic devices and circuits, and advances in synapse and neuron devices. Contributions to all these related subjects are highly encouraged and appreciated.
Dr. Andrey Sokolov
Prof. Dr. Haider Abbas
Guest Editors
Manuscript Submission Information
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Keywords
- Resistive Switching
- Non-Volatile & Volatile Memory
- Memristors
- Synapse & Neuron Devices
- In Memory Computing
- Crossbar Resistive Memory
- Neuromorphic Computing
- Circuit & CAD Mask Design for Emerging Memory
- Applications of Resistive Switching Memory
- Resistive Random Access Memory
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