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Special Issue Editors

Prof. Dr. Chun-Hsiung Lin

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Guest Editor

International College of Semiconductor Technology, National Chiao Tung University, Hsinchu City 30010, Taiwan
Interests: advanced III–V compound semiconductor and Si CMOS devices; compound semiconductor device manufacturing and integration (GaAs, InP, Sb-based, and GaN); semiconductor process technology of advanced 3D Si CMOS devices (e.g., FinFET)

Prof. Dr. Pei-Hsun Wang

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Guest Editor

Department of Optics and Photonics, National Central University, Taoyuan City 32001, Taiwan
Interests: silicon photonics; semiconductor fabrication; microresonator; frequency comb; ultrafast optics; process integration
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

III-Nitride materials, such as (Al, In, Ga)N, offer numerous advantages that make them highly valuable for various applications, from electronics to photonics. For electronics, the high electron mobility and wide bandgap of III-nitride materials allow high electron mobility transistors (HEMTs) to operate at much higher frequencies and voltages than conventional transistors. Regarding optical applications, III-nitride materials exhibit high efficiency for light-emitting devices and photodetectors. They have been adapted to lighting technologies such as energy-saving LED lighting and laser diodes for data communication and displays. In addition, with their wide bandgap, III-nitride materials yield low optical loss for integrated waveguides, which can be applied in nonlinear and quantum photonics. By varying the composition and crystal structure, III–V materials also offer a wide range of bandgap energies and other electronic properties that can be tuned. With their unique combination of a wide bandgap, high electron mobility, and thermal stability, III-nitride materials are now indispensable in various cutting-edge technologies, including solid-state lighting, 5G communication, artificial intelligence (AI), power electronics, optoelectronics, photonics, and aerospace applications.

The goal of this Special Issue is to seek innovative solutions that take advantage of unique III-nitride material properties, original designs, and fabrication techniques to push the performance of electronic and photonic devices beyond what is conventionally achievable.

Prof. Dr. Chun-Hsiung Lin
Prof. Dr. Pei-Hsun Wang
Guest Editors

Manuscript Submission Information

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Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Related Special Issue

Published Papers (1 paper)

Research

11 pages, 2100 KiB

Open AccessArticle

Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate

by Zhanfei Han, Xiangdong Li, Hongyue Wang, Yuebo Liu, Weitao Yang, Zesheng Lv, Meng Wang, Shuzhen You, Jincheng Zhang and Yue Hao

Micromachines 2024, 15(1), 156; https://doi.org/10.3390/mi15010156 - 20 Jan 2024

Viewed by 806

Abstract

This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate. The two-dimensional electron gas (2DEG) in the quantum well of the polarized AlGaN/GaN heterojunction was efficiently depleted by the p-GaN gate, leading to a high photo-to-dark current ratio (PDCR) of 3.2 × 10⁵. The quantum wells of the p-GaN/AlGaN and AlGaN/GaN heterojunctions can trap the holes and electrons excited by the UV illumination, thus efficiently triggering a photovoltaic effect and photoconductive effect, separately. Furthermore, the prepared photodetectors allow flexible adjustment of the static bias point, making it adaptable to different environments. Compared to traditional thin-film semi-transparent Ni/Au gates, indium tin oxide (ITO) exhibits higher transmittance. Under 355 nm illumination, the photodetector exhibited a super-high responsivity exceeding 3.5 × 10⁴ A/W, and it could even exceed 10⁶ A/W under 300 nm illumination. The well-designed UVPD combines both the advantages of the high-transmittance ITO gate and the structure of the commercialized p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs), which opens a new possibility of fabricating large-scale, low-cost, and high-performance UVPDs in the future. Full article

(This article belongs to the Special Issue III-Nitride Materials in Electronic and Photonic Devices)

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