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Micromachines
Special Issues
Flexible/Transparent Optoelectronic Devices for Wearable Application
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Flexible/Transparent Optoelectronic Devices for Wearable Application

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A：Physics".

Deadline for manuscript submissions: closed (30 April 2020) | Viewed by 10808

Special Issue Editor

Dr. Min Suk Oh

E-Mail Website
Guest Editor
Display Research Center, Korea Electronics Technology Institute, 68 Yatap-dong, Bundang-gu, Seongnam 463-816, Korea
Interests: oxide TFT; QD-LED; photodiode; transparent oxide semiconductor

Special Issue Information

Dear Colleagues,

Recently, various optoelectronic devices such as light-emitting diodes, photovoltaic cells, and photo-detecting devices have been developed to be applied as wearable implements. For these applications, the device properties should not degrade during device bending or stretching, and materials such as semiconductors, dielectric materials, and electrodes should display high transmittance in the visible range for high-efficient light extraction. It is very important to design materials with high mechanical flexibility and optical transmittance, while maintaining their own electrical properties. This Special Issue seeks to showcase research papers, short communications, and review articles that focus on materials such as source, drain, gate electrodes for driving thin-film transistors, electron and hole transport layers, and anodes and cathodes for optoelectronic devices. We are also interested in works dealing with various technologies such as doping, post-treatment, and bandgap engineering to improve the conductivity and transmittance of materials.

Dr. Min Suk Oh
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • materials and processes for wearable devices
  • flexible/stretchable and transparent semiconductors/electrodes
  • light-emitting device
  • photo-detecting device
  • photovoltaic device

Published Papers (3 papers)

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Research

11 pages, 2162 KiB  
Article
Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array
by Hyun Jae Kim, Chul Jong Han, Byungwook Yoo, Jeongno Lee, Kimoon Lee, Kyu Hyoung Lee and Min Suk Oh
Micromachines 2020, 11(5), 508; https://doi.org/10.3390/mi11050508 - 18 May 2020
Cited by 9 | Viewed by 2990
Abstract
We report on the effects of the intense pulsed light (IPL) rapid annealing process and back-channel passivation on the solution-processed In-Ga-Zn-O (IGZO) thin film transistors (TFTs) array. To improve the electrical properties, stability and uniformity of IGZO TFTs, the oxide channel layers were [...] Read more.
We report on the effects of the intense pulsed light (IPL) rapid annealing process and back-channel passivation on the solution-processed In-Ga-Zn-O (IGZO) thin film transistors (TFTs) array. To improve the electrical properties, stability and uniformity of IGZO TFTs, the oxide channel layers were treated by IPL at atmospheric ambient and passivated by photo-sensitive polyimide (PSPI). When we treated the IGZO channel layer by the IPL rapid annealing process, saturation field effect mobility and subthreshold swing (S.S.) were improved. And, to protect the back-channel of oxide channel layers from oxygen and water molecules, we passivated TFT devices with photo-sensitive polyimide. The IGZO TFTs on glass substrate treated by IPL rapid annealing without PSPI passivation showed the field effect mobility (μFE) of 1.54 cm2/Vs and subthreshold swing (S.S.) of 0.708 V/decade. The PSPI-passivated IGZO TFTs showed higher μFE of 2.17 cm2/Vs than that of device without passivation process and improved S.S. of 0.225 V/decade. By using a simple and fast intense pulsed light treatment with an appropriate back-channel passivation layer, we could improve the electrical characteristics and hysteresis of IGZO-TFTs. We also showed the improved uniformity of electrical characteristics for IGZO TFT devices in the area of 10 × 40 mm2. Since this IPL rapid annealing process could be performed at a low temperature, it can be applied to flexible electronics on plastic substrates in the near future. Full article
(This article belongs to the Special Issue Flexible/Transparent Optoelectronic Devices for Wearable Application)
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9 pages, 1993 KiB  
Article
The Effect of Multi-Layer Stacking Sequence of TiOx Active Layers on the Resistive-Switching Characteristics of Memristor Devices
by Minho Kim, Kungsang Yoo, Seong-Pil Jeon, Sung Kyu Park and Yong-Hoon Kim
Micromachines 2020, 11(2), 154; https://doi.org/10.3390/mi11020154 - 30 Jan 2020
Cited by 11 | Viewed by 3579
Abstract
The oxygen vacancies in the TiOx active layer play the key role in determining the electrical characteristics of TiOx–based memristors such as resistive-switching behaviour. In this paper, we investigated the effect of a multi-layer stacking sequence of TiOx active [...] Read more.
The oxygen vacancies in the TiOx active layer play the key role in determining the electrical characteristics of TiOx–based memristors such as resistive-switching behaviour. In this paper, we investigated the effect of a multi-layer stacking sequence of TiOx active layers on the resistive-switching characteristics of memristor devices. In particular, the stacking sequence of the multi-layer TiOx sub-layers, which have different oxygen contents, was varied. The optimal stacking sequence condition was confirmed by measuring the current–voltage characteristics, and also the retention test confirmed that the characteristics were maintained for more than 10,000 s. Finally, the simulation using the Modified National Institute of Standards and Technology handwriting recognition data set revealed that the multi-layer TiOx memristors showed a learning accuracy of 89.18%, demonstrating the practical utilization of the multi-layer TiOx memristors in artificial intelligence systems. Full article
(This article belongs to the Special Issue Flexible/Transparent Optoelectronic Devices for Wearable Application)
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Graphical abstract

6 pages, 3698 KiB  
Article
Hybrid Quantum Dot Light-Emitting Diodes for White Emission Using Blue Phosphorescent Organic Molecules and Red Quantum Dots
by Aram Moon and Jiwan Kim
Micromachines 2019, 10(9), 609; https://doi.org/10.3390/mi10090609 - 14 Sep 2019
Cited by 4 | Viewed by 3816
Abstract
Hybrid quantum dot light-emitting diodes (QLEDs) with no buffer layer were developed to achieve white emission using red quantum dots by spin-coating, and blue phosphorescent organic molecules by thermal evaporation. These unique bichromatic devices exhibit two distinct electroluminescent peaks with similar intensities at [...] Read more.
Hybrid quantum dot light-emitting diodes (QLEDs) with no buffer layer were developed to achieve white emission using red quantum dots by spin-coating, and blue phosphorescent organic molecules by thermal evaporation. These unique bichromatic devices exhibit two distinct electroluminescent peaks with similar intensities at 10.5 V. For white emission, these hybrid QLEDs present a maximum luminance of 6195 cd/m2 and a current efficiency of 2.02 cd/A. These results indicate that the unique double emission layers have the potential for bright and efficient white devices using fewer materials. Full article
(This article belongs to the Special Issue Flexible/Transparent Optoelectronic Devices for Wearable Application)
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