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Black Phosphorus: Application in Materials Science

A special issue of Molecules (ISSN 1420-3049). This special issue belongs to the section "Inorganic Chemistry".

Deadline for manuscript submissions: closed (30 November 2018) | Viewed by 4645

Special Issue Editor


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Guest Editor
Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
Interests: black phosphorus; 2D materials; heterostructures; electrocatalysis; photocatalysis; photothermal therapy; drug delivery; synthetic biology

Special Issue Information

Dear Colleagues,

Black phosphorus (BP), also known as phosphorene, has attracted recent scientific attention owing to its unique structure and properties. As a direct-bandgap layered 2D semiconductor, BP has intriguing physical properties, such as high charge carrier mobility, large on-off ratio, significant anisotropy, and layer-dependent bandgap. Therefore, it has shown great application potential in field-effect transistors, photoelectric devices, lithium-ion batteries, photo-therapy, photovoltaics, sensing, and catalysis. Furthermore, the biodegradability and biocompatibility of BP bode well for biomedical applications.

In this Special Issue, articles are invited to provide a recent insight into the synthesis, properties and applications of black phosphorus.

Prof. Xue-Feng Yu
Guest Editor

Manuscript Submission Information

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Keywords

  • Black phosphorus
  • Phosphorene
  • Synthesis
  • Surface modification
  • Functionalization
  • Semiconductor properties
  • Heterostructures
  • Catalysis
  • Photoelectric applications
  • Biomedical applications

Published Papers (1 paper)

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Research

12 pages, 3556 KiB  
Article
First-Principles Calculations of Angular and Strain Dependence on Effective Masses of Two-Dimensional Phosphorene Analogues (Monolayer α-Phase Group-IV Monochalcogenides MX)
by Yuanfeng Xu, Ke Xu and Hao Zhang
Molecules 2019, 24(3), 639; https://doi.org/10.3390/molecules24030639 - 12 Feb 2019
Cited by 13 | Viewed by 4236
Abstract
Group IV monochalcogenides M X (M = Ge, Sn; X = S, Se)-semiconductor isostructure to black phosphorene-have recently emerged as promising two-dimensional materials for ultrathin-film photovoltaic applications owing to the fascinating electronic and optical properties. Herein, using first-principles calculations, we systematically investigate [...] Read more.
Group IV monochalcogenides M X (M = Ge, Sn; X = S, Se)-semiconductor isostructure to black phosphorene-have recently emerged as promising two-dimensional materials for ultrathin-film photovoltaic applications owing to the fascinating electronic and optical properties. Herein, using first-principles calculations, we systematically investigate the orbital contribution electronic properties, angular and strain dependence on the carrier effective masses of monolayer M X . Based on analysis on the orbital-projected band structure, the VBMs are found to be dominantly contributed from the p z orbital of X atom, while the CBM is mainly dominated by p x or p y orbital of M atom. 2D SnS has the largest anisotropy ratio due to the lacking of s orbital contribution which increases the anisotropy. Moreover, the electron/hole effective masses along the x direction have the steeper tendency of increase under the uniaxial tensile strain compared to those along y direction. Full article
(This article belongs to the Special Issue Black Phosphorus: Application in Materials Science)
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