Current Advances in Nanoelectronics, Nanosensors and Devices

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (31 January 2023) | Viewed by 16761

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Superconducting and Other Innovative Materials and Devices Institute—National Research Council (SPIN-CNR), Via Giovanni Paolo II, 132, 84084 Fisciano, Italy
Interests: graphene; 2D materials; electronic properties; field effect transistors; photodetectors; contact resistance; field emission from nanostructures
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Special Issue Information

Dear Colleagues,

The Special Issue “Current Advances in Nanoelectronics, Nanosensors, and Devices” will present a collection of high-quality original research papers as well as comprehensive reviews on the recent advances in the field of nanostructures, 2D materials, nanoelectronics, nanosensors, and devices.

This Special Issue aims to highlight new understanding, new techniques, new results, new theories, and new innovative approaches and developments in all aspects of the fabrication, characterization, and application of nanostructures, 2D materials, nanoelectronics, nanosensors, and devices and their integration in existing and emerging applications. Potential topics include but are not limited to:

  • Nanotubes and nanowires;
  • 2D nanomaterials;
  • Synthesis and characterization of nanostructured and nanoscale materials;
  • Properties of nanoscale materials;
  • Theoretical modeling;
  • Nanoelectronics and nanophotonics;
  • Diode and transistors;
  • Photodetectors and THz detectors;
  • Nanosensors and nanodevices;
  • Electron emitters;
  • Flexible electronics;
  • Optoelectronic devices;
  • Supercapacitors and batteries.

Dr. Filippo Giubileo
Guest Editor

Manuscript Submission Information

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Published Papers (8 papers)

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Research

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14 pages, 45200 KiB  
Communication
Transport Property of Wrinkled Graphene Nanoribbon Tuned by Spin-Polarized Gate Made of Vanadium-Benzene Nanowire
by Hong Yu, Yan Shang, Yangyang Hu, Lei Pei and Guiling Zhang
Nanomaterials 2023, 13(15), 2270; https://doi.org/10.3390/nano13152270 - 07 Aug 2023
Viewed by 878
Abstract
A series of four-terminal V7(Bz)8-WGNR devices were established with wrinkled graphene nanoribbon (WGNR) and vanadium-benzene nanowire (V7(Bz)8). The spin-polarized V7(Bz)8 as the gate channel was placed crossing the plane, the concave (endo-positioned) [...] Read more.
A series of four-terminal V7(Bz)8-WGNR devices were established with wrinkled graphene nanoribbon (WGNR) and vanadium-benzene nanowire (V7(Bz)8). The spin-polarized V7(Bz)8 as the gate channel was placed crossing the plane, the concave (endo-positioned) and the convex (endo-positioned) surface of WGNR with different curvatures via Van der Waals interaction. The density functional theory (DFT) and nonequilibrium Green’s function (NEGF) methods were adopted to calculate the transport properties of these devices at various bias voltages (VS) and gate voltages (VG), such as the conductance, spin-polarized currents, transmission spectra (TS), local density of states (LDOS), and scattering states. The results indicate that the position of V7(Bz)8 and the bending curvature of WGNR play important roles in tuning the transport properties of these four-terminal devices. A spin-polarized transport property is induced for these four-terminal devices by the spin-polarized nature of V7(Bz)8. Particularly, the down-spin channel disturbs strongly on the source-to-drain conductance of WGNR when V7(Bz)8 is endo-positioned crossing the WGNR. Our findings on the novel property of four-terminal V7(Bz)8-WGNR devices provide useful guidelines for achieving flexible graphene-based electronic nanodevices by attaching other similar multidecker metal-arene nanowires. Full article
(This article belongs to the Special Issue Current Advances in Nanoelectronics, Nanosensors and Devices)
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14 pages, 12135 KiB  
Article
Experiments on the Electrical Conductivity of PEG 400 Nanocolloids Enhanced with Two Oxide Nanoparticles
by Elena Ionela Chereches and Alina Adriana Minea
Nanomaterials 2023, 13(9), 1555; https://doi.org/10.3390/nano13091555 - 05 May 2023
Cited by 4 | Viewed by 1126
Abstract
This paper aims to provide some insights into the pH and electrical conductivity of two classes of nanocolloids with PEG 400 as the base fluid. Thus, nanoparticles of two oxides—MgO and TiO2—were added to the base fluid in 5 mass concentrations [...] Read more.
This paper aims to provide some insights into the pH and electrical conductivity of two classes of nanocolloids with PEG 400 as the base fluid. Thus, nanoparticles of two oxides—MgO and TiO2—were added to the base fluid in 5 mass concentrations in the range 0.25–2.5 %wt. The stability was evaluated in terms of pH at ambient temperature, while the electrical conductivity was discussed at both ambient temperature and up to 333.15 K. The electrical conductivity of PEG 400 was previously discussed by this group, while the behavior of the new nanocolloids was debated in terms of the state of the art. More precisely, the influence of MgO increases electrical conductivity, and an enhancement of up to 48% for 0.25% MgO was found, while the influence of TiO2 nanoparticles was found to be in similar ranges. In conclusion, electrical conductivity varies with temperature and the addition of nanoparticles to the base fluid, although the mechanisms that are driving the nanoparticle type and concentration influence are not yet entirely assumed in the available literature. Full article
(This article belongs to the Special Issue Current Advances in Nanoelectronics, Nanosensors and Devices)
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13 pages, 3584 KiB  
Article
A Novel Source/Drain Extension Scheme with Laser-Spike Annealing for Nanosheet Field-Effect Transistors in 3D ICs
by Sanguk Lee, Jinsu Jeong, Bohyeon Kang, Seunghwan Lee, Junjong Lee, Jaewan Lim, Hyeonjun Hwang, Sungmin Ahn and Rockhyun Baek
Nanomaterials 2023, 13(5), 868; https://doi.org/10.3390/nano13050868 - 26 Feb 2023
Viewed by 1869
Abstract
This study proposed a novel source/drain (S/D) extension scheme to increase the stress in nanosheet (NS) field-effect transistors (NSFETs) and investigated the scheme by using technology-computer-aided-design simulations. In three-dimensional integrated circuits, transistors in the bottom tier were exposed to subsequent processes; therefore, selective [...] Read more.
This study proposed a novel source/drain (S/D) extension scheme to increase the stress in nanosheet (NS) field-effect transistors (NSFETs) and investigated the scheme by using technology-computer-aided-design simulations. In three-dimensional integrated circuits, transistors in the bottom tier were exposed to subsequent processes; therefore, selective annealing, such as laser-spike annealing (LSA), should be applied. However, the application of the LSA process to NSFETs significantly decreased the on-state current (Ion) owing to diffusionless S/D dopants. Furthermore, the barrier height below the inner spacer was not lowered even under on-state bias conditions because ultra-shallow junctions between the NS and S/D were formed far from the gate metal. However, the proposed S/D extension scheme overcame these Ion reduction issues by adding an NS-channel-etching process before S/D formation. A larger S/D volume induced a larger stress in the NS channels; thus, the stress was boosted by over 25%. Additionally, an increase in carrier concentrations in the NS channels improved Ion. Therefore, Ion increased by approximately 21.7% (37.4%) in NFETs (PFETs) compared with NSFETs without the proposed scheme. Additionally, the RC delay was improved by 2.03% (9.27%) in NFETs (PFETs) compared with NSFETs using rapid thermal annealing. Therefore, the S/D extension scheme overcame the Ion reduction issues encountered in LSA and significantly enhanced the AC/DC performance. Full article
(This article belongs to the Special Issue Current Advances in Nanoelectronics, Nanosensors and Devices)
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14 pages, 4297 KiB  
Article
Study on Thermal Effect of Aluminum-Air Battery
by Yajun Cai, Yunwei Tong, Yingjie Liu, Xinyu Li, Beiyang Chen, Feng Liu, Baowei Zhou, Yichun Liu, Zhenbo Qin, Zhong Wu and Wenbin Hu
Nanomaterials 2023, 13(4), 646; https://doi.org/10.3390/nano13040646 - 06 Feb 2023
Viewed by 1852
Abstract
The heat released from an aluminum-air battery has a great effect on its performance and operating life during the discharge process. A theoretical model was proposed to evaluate the resulting thermal effect, and the generated heat was divided into the following sources: anodic [...] Read more.
The heat released from an aluminum-air battery has a great effect on its performance and operating life during the discharge process. A theoretical model was proposed to evaluate the resulting thermal effect, and the generated heat was divided into the following sources: anodic aluminum oxidation reaction, cathodic oxygen reduction reaction, heat production against the battery internal resistance, and hydrogen-evolution reaction. Quantitative analysis was conducted on each part, showing that all heat production sources increased with discharge current density. It should be noted that the heat caused by hydrogen evolution accounted for the most, up to 90%. Furthermore, the regulation strategy for inhibiting hydrogen evolution was developed by addition of hybrid additives to the electrolyte, and the hydrogen-evolution rate was greatly reduced by more than 50% as was the generated heat. This research has important guidance for the thermal effect analysis of aluminum–air batteries, together with control of the thermal management process by inhibiting hydrogen evolution, thus promoting their practical application. Full article
(This article belongs to the Special Issue Current Advances in Nanoelectronics, Nanosensors and Devices)
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12 pages, 5287 KiB  
Article
Design and Implementation of Graphene-Based Tunable Microwave Filter for THz Applications
by Cleophas D. K. Mutepfe and Viranjay M. Srivastava
Nanomaterials 2022, 12(24), 4443; https://doi.org/10.3390/nano12244443 - 14 Dec 2022
Cited by 2 | Viewed by 1392
Abstract
A reconfigurable Substrate-Integrated Waveguide (SIW) filter operating in the THz region was designed in this work. Two SIW resonators were coupled through a magnetic iris to form a second-order filter with a double-layer substrate. The first substrate was silicon of permittivity 11.9; on [...] Read more.
A reconfigurable Substrate-Integrated Waveguide (SIW) filter operating in the THz region was designed in this work. Two SIW resonators were coupled through a magnetic iris to form a second-order filter with a double-layer substrate. The first substrate was silicon of permittivity 11.9; on top of it, silicon dioxide of permittivity 3.9 was placed. The ground and upper plane were composed of gold plates. Graphene material was then used for the tunability of the filter. A thin graphene sheet was sandwiched between the silicon dioxide substrate and the upper gold plate. An external DC bias voltage was then applied to change the chemical potential of graphene, which, in turn, managed to change the operational center frequency of the filter within the range of 1.289 THz to 1.297 THz, which translated to a bandwidth range of 8 GHz. The second part of this work centered on changing the aspect ratio of the graphene patch to change the center frequency. It was observed that the frequency changed within the range of 1.2908 THz to 1.2929 THz, which gave a bandwidth of 2.1 GHz change. Full article
(This article belongs to the Special Issue Current Advances in Nanoelectronics, Nanosensors and Devices)
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11 pages, 2620 KiB  
Article
Formation of Diamane Nanostructures in Bilayer Graphene on Langasite under Irradiation with a Focused Electron Beam
by Eugenii V. Emelin, Hak Dong Cho, Vitaly I. Korepanov, Liubov A. Varlamova, Sergey V. Erohin, Deuk Young Kim, Pavel B. Sorokin and Gennady N. Panin
Nanomaterials 2022, 12(24), 4408; https://doi.org/10.3390/nano12244408 - 10 Dec 2022
Cited by 5 | Viewed by 1274
Abstract
In the presented paper, we studied bilayer CVD graphene transferred to a langasite substrate and irradiated with a focused electron beam through a layer of polymethyl methacrylate (PMMA). Changes in the Raman spectra and an increase in the electrical resistance of bigraphene after [...] Read more.
In the presented paper, we studied bilayer CVD graphene transferred to a langasite substrate and irradiated with a focused electron beam through a layer of polymethyl methacrylate (PMMA). Changes in the Raman spectra and an increase in the electrical resistance of bigraphene after irradiation indicate a local phase transition associated with graphene diamondization. The results are explained in the framework of the theory of a chemically induced phase transition of bilayer graphene to diamane, which can be associated with the release of hydrogen and oxygen atoms from PMMA and langasite due to the “knock-on” effect, respectively, upon irradiation of the structure with an electron beam. Theoretical calculations of the modified structure of bigraphene on langasite and the experimental evaluation of sp3-hybridized carbon fraction indicate the formation of diamane nanoclusters in the bigraphene irradiated regions. This result can be considered as the first realization of local tunable bilayer graphene diamondization. Full article
(This article belongs to the Special Issue Current Advances in Nanoelectronics, Nanosensors and Devices)
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Review

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21 pages, 5135 KiB  
Review
A Nanotechnology-Based Approach to Biosensor Application in Current Diabetes Management Practices
by Ambreen Shoaib, Ali Darraj, Mohammad Ehtisham Khan, Lubna Azmi, Abdulaziz Alalwan, Osamah Alamri, Mohammad Tabish and Anwar Ulla Khan
Nanomaterials 2023, 13(5), 867; https://doi.org/10.3390/nano13050867 - 26 Feb 2023
Cited by 16 | Viewed by 4732
Abstract
Diabetes mellitus is linked to both short-term and long-term health problems. Therefore, its detection at a very basic stage is of utmost importance. Research institutes and medical organizations are increasingly using cost-effective biosensors to monitor human biological processes and provide precise health diagnoses. [...] Read more.
Diabetes mellitus is linked to both short-term and long-term health problems. Therefore, its detection at a very basic stage is of utmost importance. Research institutes and medical organizations are increasingly using cost-effective biosensors to monitor human biological processes and provide precise health diagnoses. Biosensors aid in accurate diabetes diagnosis and monitoring for efficient treatment and management. Recent attention to nanotechnology in the fast-evolving area of biosensing has facilitated the advancement of new sensors and sensing processes and improved the performance and sensitivity of current biosensors. Nanotechnology biosensors detect disease and track therapy response. Clinically efficient biosensors are user-friendly, efficient, cheap, and scalable in nanomaterial-based production processes and thus can transform diabetes outcomes. This article is more focused on biosensors and their substantial medical applications. The highlights of the article consist of the different types of biosensing units, the role of biosensors in diabetes, the evolution of glucose sensors, and printed biosensors and biosensing systems. Later on, we were engrossed in the glucose sensors based on biofluids, employing minimally invasive, invasive, and noninvasive technologies to find out the impact of nanotechnology on the biosensors to produce a novel device as a nano-biosensor. In this approach, this article documents major advances in nanotechnology-based biosensors for medical applications, as well as the hurdles they must overcome in clinical practice. Full article
(This article belongs to the Special Issue Current Advances in Nanoelectronics, Nanosensors and Devices)
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25 pages, 8145 KiB  
Review
Sensor to Electronics Applications of Graphene Oxide through AZO Grafting
by Suresh Sagadevan, Md Zillur Rahman, Estelle Léonard, Dusan Losic and Volker Hessel
Nanomaterials 2023, 13(5), 846; https://doi.org/10.3390/nano13050846 - 24 Feb 2023
Cited by 4 | Viewed by 2287
Abstract
Graphene is a two-dimensional (2D) material with a single atomic crystal structure of carbon that has the potential to create next-generation devices for photonic, optoelectronic, thermoelectric, sensing, wearable electronics, etc., owing to its excellent electron mobility, large surface-to-volume ratio, adjustable optics, and high [...] Read more.
Graphene is a two-dimensional (2D) material with a single atomic crystal structure of carbon that has the potential to create next-generation devices for photonic, optoelectronic, thermoelectric, sensing, wearable electronics, etc., owing to its excellent electron mobility, large surface-to-volume ratio, adjustable optics, and high mechanical strength. In contrast, owing to their light-induced conformations, fast response, photochemical stability, and surface-relief structures, azobenzene (AZO) polymers have been used as temperature sensors and photo-switchable molecules and are recognized as excellent candidates for a new generation of light-controllable molecular electronics. They can withstand trans-cis isomerization by conducting light irradiation or heating but have poor photon lifetime and energy density and are prone to agglomeration even at mild doping levels, reducing their optical sensitivity. Graphene derivatives, including graphene oxide (GO) and reduced graphene oxide (RGO), are an excellent platform that, combined with AZO-based polymers, could generate a new type of hybrid structure with interesting properties of ordered molecules. AZO derivatives may modify the energy density, optical responsiveness, and photon storage capacity, potentially preventing aggregation and strengthening the AZO complexes. They are potential candidates for sensors, photocatalysts, photodetectors, photocurrent switching, and other optical applications. This review aimed to provide an overview of the recent progress in graphene-related 2D materials (Gr2MS) and AZO polymer AZO-GO/RGO hybrid structures and their synthesis and applications. The review concludes with remarks based on the findings of this study. Full article
(This article belongs to the Special Issue Current Advances in Nanoelectronics, Nanosensors and Devices)
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