Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity
Abstract
:1. Introduction
2. Technology and Thermal Measurements
Thermal Resistance Model
3. Experimental Results and Discussion
4. Modeled and Extraction Data Verification
Current-Voltage Characteristics
5. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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[Constant k(T)] | Channel Temperature (Tch) | [Non-Linear k(T)] | Channel Temperature (Tch) [from Non-Linear k(T)] | |
---|---|---|---|---|
0.0039 | 0.0441 | 27.24 | 0.0083 | 27.34 |
0.0039 | 0.0441 | 27.26 | 0.0095 | 27.36 |
0.0082 | 0.0441 | 29.63 | 0.0116 | 29.86 |
0.0083 | 0.0441 | 29.72 | 0.0133 | 29.95 |
0.0124 | 0.0441 | 32.01 | 0.0189 | 32.37 |
0.0127 | 0.0441 | 32.18 | 0.0213 | 32.55 |
0.0474 | 0.0441 | 51.84 | 0.0343 | 54.07 |
0.0587 | 0.0441 | 58.28 | 0.0345 | 61.39 |
0.1024 | 0.0441 | 83.09 | 0.0371 | 90.79 |
0.1243 | 0.0441 | 95.48 | 0.0372 | 106.21 |
0.1599 | 0.0441 | 115.66 | 0.0405 | 132.49 |
0.1913 | 0.0441 | 133.42 | 0.0405 | 156.46 |
[Constant k(T)] | Non-Linear Model | Percentage of Error (%) with Measurement | |||
---|---|---|---|---|---|
0.0039 | 0.0441 | 0.089 | 0.0080 | 27.25 | 0.328 |
0.0039 | 0.0441 | 0.090 | 0.0082 | 27.27 | 0.330 |
0.0082 | 0.0441 | 0.185 | 0.0343 | 29.67 | 0.621 |
0.0083 | 0.0441 | 0.188 | 0.0356 | 29.76 | 0.630 |
0.0124 | 0.0441 | 0.281 | 0.0787 | 32.093 | 0.865 |
0.0127 | 0.0441 | 0.287 | 0.0825 | 32.267 | 0.881 |
0.0474 | 0.0441 | 1.074 | 1.1530 | 52.998 | 1.979 |
0.0587 | 0.0441 | 1.331 | 1.7724 | 60.056 | 2.173 |
0.1024 | 0.0441 | 2.324 | 5.3994 | 88.491 | 2.539 |
0.1243 | 0.0441 | 2.819 | 7.9499 | 103.438 | 2.607 |
0.1599 | 0.0441 | 3.626 | 13.1513 | 128.813 | 2.780 |
0.1913 | 0.0441 | 4.337 | 18.8081 | 152.223 | 2.706 |
Symbol | SiC | Si | Sapphire |
---|---|---|---|
x | 0.45 | 0.21 | 0.20 |
k1 | −0.11 | −0.12 | −0.11 |
k2 (V ∙ cm) | 1.76 × 10−9 | 1.96 × 10−9 | 1.74 × 10−9 |
k3 (V ∙ cm2) | 1.76 × 10−18 | 1.10 × 10−18 | 1.80 × 10−18 |
d (nm) | 8 | 28 | 28 |
VSAT (V/m) | 9.5 × 108 | 9.0 × 108 | 4.5 × 108 |
Voff (V) | −0.88 | −1.54 | −2.63 |
μ0 (m2/V ∙ s) | 0.0126 | 0.0186 | 0.016 |
Sample | Drain Voltage Range | Measured Rth (°C/W) | Charge Control based Rth (°C/W) [Average] | Our Model Rth (°C/W) | ||
---|---|---|---|---|---|---|
VGS = 2 V | VGS = 1 V | VGS = 0 V | ||||
Sapphire | 10–13 V | 645 | 605 | 554 | 630 | 625 |
14–16 V | 650 | 705 | 729 | |||
17–20 V | 673 | 714 | 830 | |||
SiC | 13–15 V | 136 | 178 | - | 150 | 127 |
16–20 V | 140 | 165 | ||||
Si | 10–13 V | - | 593 | 683 | 705 | 712 |
14–16 V | - | 636 | 800 | |||
17–20 V | - | 846 | 905 |
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Chakraborty, S.; Amir, W.; Shin, J.-W.; Shin, K.-Y.; Cho, C.-Y.; Kim, J.-M.; Hoshi, T.; Tsutsumi, T.; Sugiyama, H.; Matsuzaki, H.; et al. Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity. Materials 2022, 15, 8415. https://doi.org/10.3390/ma15238415
Chakraborty S, Amir W, Shin J-W, Shin K-Y, Cho C-Y, Kim J-M, Hoshi T, Tsutsumi T, Sugiyama H, Matsuzaki H, et al. Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity. Materials. 2022; 15(23):8415. https://doi.org/10.3390/ma15238415
Chicago/Turabian StyleChakraborty, Surajit, Walid Amir, Ju-Won Shin, Ki-Yong Shin, Chu-Young Cho, Jae-Moo Kim, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, and et al. 2022. "Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity" Materials 15, no. 23: 8415. https://doi.org/10.3390/ma15238415