Hexagonal Boron Nitride Based Photonic Quantum Technologies
Abstract
:1. Introduction
1.1. Structure of hBN
1.2. Electronic and Vibrational Properties of hBN
1.3. Growth and Transfer of hBN
1.4. SPEs in the Solid State
1.5. SPEs in hBN
Source | Bulk or 2D | T | Brightness (Counts/s) | Purity () | W (%) | Emission Range (nm) |
---|---|---|---|---|---|---|
Diamond NV− | Bulk | RT | ∼1 [71] | 0.1–0.3 [71] | 4–20 [72,73] | 637 [71,74,75] |
Diamond SiV | Bulk | RT | ∼1–5 [76,77] | <0.2 [76,77] | 70–97 [76] | 738 [73,76,77], 726.5 and 740.8 [78] |
InAs QDs | Bulk | up to 80 K [79] | ∼ [80,81], | 0.00044 [69], 0.006 [62] | 1500 [69], 1550 [79] | |
SiC | Bulk | RT | ∼ [82] | <0.13 [82,83] | 8–40 [84,85] | 427–745 [86], 858, [84] 862, 917 [85,87], 1033–1137 [88], 1540 [89], 726.5 and 740.8 [78] |
TMDs | 2D | 4 K | [90] | <0.21 [90] | 0.01–0.64 [91] | 708–757 [63], 1080–1550 [70] |
CNTs | Nanotubes | RT | ∼ [92,93] | 0.01 [92], 0.04–0.39 [94] | 980 and 1120 [95], 975 and 1137 [96], 991 and 1158 [97], 1140–1580 [92] | |
GaN QDs | Bulk | RT | ∼ [98] | 0.01–0.3 [99,100,101] | 270 nm–290 [98,102], 338 nm [100], 1120 nm, 1225 nm, and 1300 nm [101] |
2. Colour Centres in hBN
2.1. Creation of Colour Centres in hBN
2.1.1. Annealing
2.1.2. Ion Implantation, Electron Beam and Laser Pulse Irradiation
2.1.3. Chemical and Plasma Etching
2.1.4. CVD hBN
2.1.5. Strain Activation
2.1.6. Other Methods
2.2. Defect Assignment
3. Graphene/hBN Heterostructure Devices for Electrical Control of hBN SPEs
3.1. Stark Tuning of hBN SPEs
3.2. Electrical Charge Control of hBN SPEs
4. Challenges and Future Perspectives
Author Contributions
Funding
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Prasad, M.K.; Taverne, M.P.C.; Huang, C.-C.; Mar, J.D.; Ho, Y.-L.D. Hexagonal Boron Nitride Based Photonic Quantum Technologies. Materials 2024, 17, 4122. https://doi.org/10.3390/ma17164122
Prasad MK, Taverne MPC, Huang C-C, Mar JD, Ho Y-LD. Hexagonal Boron Nitride Based Photonic Quantum Technologies. Materials. 2024; 17(16):4122. https://doi.org/10.3390/ma17164122
Chicago/Turabian StylePrasad, Madhava Krishna, Mike P. C. Taverne, Chung-Che Huang, Jonathan D. Mar, and Ying-Lung Daniel Ho. 2024. "Hexagonal Boron Nitride Based Photonic Quantum Technologies" Materials 17, no. 16: 4122. https://doi.org/10.3390/ma17164122