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Article

Nanostructured Oxide (SnO2, FTO) Thin Films for Energy Harvesting: A Significant Increase in Thermoelectric Power at Low Temperature

1
Groupe de Recherches sur l’Énergétique des Milieux Ionisés, GREMI, Université d’Orléans, CNRS, 14 Rue d’Issoudun, 45067 Orléans, France
2
Department of Physics, Arul Anandar College, Madurai 625514, India
3
Laboratoire Nanotechnologies et Nanosystèmes (LN2)-CNRS IRL-3463, Université de Sherbrooke, Sherbrooke, QC J1K OA5, Canada
*
Authors to whom correspondence should be addressed.
Micromachines 2024, 15(2), 188; https://doi.org/10.3390/mi15020188
Submission received: 27 November 2023 / Revised: 20 January 2024 / Accepted: 23 January 2024 / Published: 26 January 2024
(This article belongs to the Special Issue Nanomaterials Based Catalysis and Energy Conversion)

Abstract

Previous studies have shown that undoped and doped SnO2 thin films have better optical and electrical properties. This study aims to investigate the thermoelectric properties of two distinct semiconducting oxide thin films, namely SnO2 and F-doped SnO2 (FTO), by the nebulizer spray pyrolysis technique. An X-ray diffraction study reveals that the synthesized films exhibit a tetragonal structure with the (200) preferred orientation. The film structural quality increases from SnO2 to FTO due to the substitution of F ions into the host lattice. The film thickness increases from 530 nm for SnO2 to 650 nm for FTO films. Room-temperature electrical resistivity decreases from (8.96 ± 0.02) × 10−2 Ω·cm to (4.64 ± 0.01) × 10−3 Ω·cm for the SnO2 and FTO thin films, respectively. This is due to the increase in the carrier density of the films, (2.92 ± 0.02) × 1019 cm−3 (SnO2) and (1.63 ± 0.03) × 1020 cm−3 (FTO), caused by anionic substitution. It is confirmed that varying the temperature (K) enhances the electron transport properties. The obtained Seebeck coefficient (S) increases as the temperature is increased, up to 360 K. The synthesized films exhibit the S value of −234 ± 3 μV/K (SnO2) and −204 ± 3 μV/K (FTO) at 360 K. The estimated power factor (PF) drastically increases from ~70 (μW/m·K2) to ~900 (μW/m·K2) for the SnO2 and FTO film, respectively.
Keywords: oxide thin films; spray pyrolysis; Hall Effect; Seebeck coefficient oxide thin films; spray pyrolysis; Hall Effect; Seebeck coefficient

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MDPI and ACS Style

Deva Arun Kumar, K.; Valanarasu, S.; Capelle, A.; Nar, S.; Karim, W.; Stolz, A.; Aspe, B.; Semmar, N. Nanostructured Oxide (SnO2, FTO) Thin Films for Energy Harvesting: A Significant Increase in Thermoelectric Power at Low Temperature. Micromachines 2024, 15, 188. https://doi.org/10.3390/mi15020188

AMA Style

Deva Arun Kumar K, Valanarasu S, Capelle A, Nar S, Karim W, Stolz A, Aspe B, Semmar N. Nanostructured Oxide (SnO2, FTO) Thin Films for Energy Harvesting: A Significant Increase in Thermoelectric Power at Low Temperature. Micromachines. 2024; 15(2):188. https://doi.org/10.3390/mi15020188

Chicago/Turabian Style

Deva Arun Kumar, Karuppiah, S. Valanarasu, Alex Capelle, Sibel Nar, Wael Karim, Arnaud Stolz, Barthélemy Aspe, and Nadjib Semmar. 2024. "Nanostructured Oxide (SnO2, FTO) Thin Films for Energy Harvesting: A Significant Increase in Thermoelectric Power at Low Temperature" Micromachines 15, no. 2: 188. https://doi.org/10.3390/mi15020188

APA Style

Deva Arun Kumar, K., Valanarasu, S., Capelle, A., Nar, S., Karim, W., Stolz, A., Aspe, B., & Semmar, N. (2024). Nanostructured Oxide (SnO2, FTO) Thin Films for Energy Harvesting: A Significant Increase in Thermoelectric Power at Low Temperature. Micromachines, 15(2), 188. https://doi.org/10.3390/mi15020188

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