An S/C/X-Band 4-Bit Digital Step Attenuator MMIC with 0.25 μm GaN HEMT Technology
Round 1
Reviewer 1 Report
This paper presents a 4-bit digital step attenuator based on 0.25 um GaN HEMT Technology. The demonstration of the work is generally clear, however, the novelty of the design method and technique is not clearly presented. Several comments on the work is listed below.
- The broadband digital attenuator is only 4-bit, however, the state-of-the-art attenuator is commonly 6-bit and even more. I didn't see any advantages of the one in this manuscript.
- Several relevant work should be included in the introduction part. For example, the work listed below should be included and compared.
[1] CGY2171XBUH/C1 6-bit 1-15 GHz Attenuator from OMMIC
3. There are quite some English writing issues, such as the abbreviation DSA is used directly in the manuscript without given the full name.
Author Response
Please see the attachment.
Author Response File: 
Author Response.docx
Reviewer 2 Report
- Refer to the comparison table, what's the advantage in this work
- The phase error at high frequency looks not good, which part dominates this degradation
- In Fig4(b), the parasitic of DPDT should be clarified
- The impedance seen from ATT stages should be capacitive. With the SPDTs and DPDTs, please give more analysis about the inductors L1 and L2
Author Response
Please see the attachment.
Author Response File: Author Response.docx
Round 2
Reviewer 1 Report
I have no further comments. I suggest to accept this manuscript for publication.
Reviewer 2 Report
Thanks for the revision. I have no more questions
