The Effect of Deposition Temperature on TiN Thin Films for the Electrode Layer of 3D Capacitors Prepared by Atomic Layer Deposition
, Faqiang Zhang 2, Mingsheng Ma 2,3 and Zhifu Liu 1,2,3,*
Round 1
Reviewer 1 Report
Comments and Suggestions for Authors
Comments on the paper: The Effect of Deposition Temperature on TiN Thin Films for 3D Capacitors Electrode Layer Prepared by Atomic Layer Deposition
The work “The Effect of Deposition Temperature on TiN Thin Films for 3D Capacitors Electrode Layer Prepared by Atomic Layer Deposition” is novel in its comprehensive analysis of the effect of deposition temperature on the microstructural and conductive properties of TiN thin films specifically for use in 3D capacitor applications. In this study, TiN thin films were prepared on Si substrates using atomic layer deposition (ALD) from 375 °C to 475 °C.
Comments on the Quality of English Language
The work is well written, although a detailed review of the English language is recommended (e.g. TiN is an versatile… line 37 )
Author Response
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Author Response File: 
Author Response.pdf
Reviewer 2 Report
Comments and Suggestions for Authorsplease, improve following points:
+1+ page 2, experimental part, the substrates are cleaned with HF and acetone, how this is done? please mention the process and the concentration of the HF
+2+ page 5, Fig.4; please, provide SEM images of higher magnification
+3+ also show a SEM image of the freshly HF treated wafer
+4+ page 7, the AFM image should be also shown in better quality
+5+ also show AFM image of freshly HF treated wafer
+6+ please, describe exactly how the roughness shown in Fig.7 is calculated
+7+ Fig.8 and Fig.11 the unit in y-axis is wrong
Comments on the Quality of English Languageplease, make general check and improve
Author Response
Please see the attachment.
Author Response File: Author Response.pdf
Reviewer 3 Report
Comments and Suggestions for AuthorsReview The Effect of Deposition Temperature on TiN Thin Films for 3D Capacitors Electrode Layer Prepared by Atomic Layer Deposition
Overall evaluation:
Very interesting work, worthwhile publishing. In some points (crystallinity) over interpretation of the experimental results. Well written, some minor comments regarding English usage.
Line 34: chemical reaction
Line 54: were also presented
Line 92: and the thickness
Fig.2a: after 1000 cycles the expected thickness is about 32….36 nm. The thickness measurements by ellipsometry get clearly to their detection limit. The authors should explain what is the measurement error.
Line 131: The SEM characterization of the morphology of the samples also verified the phenomenon of the preferred crystal orientation, as shown in Fig. 4(a)~(f): The XRD data should allow to estimate crystal size. Most likely the crystal size is much smaller than the film thickness and the diameter of the pyramids seen. It is very difficult to conclude from the form to crystal orientation. I would suggest to suppress this affirmation.
Line 159: were not obtained.
Line 192: “In addition, considering that the roughness may affect the adhesion strength between films and substrates, the tape tearing test was also performed in advance to demonstrate the reliability for the deposited TiN thin films.” If the test is mentioned, the test result should be added. Nevertheless, in my experience the tape test will almost never show any result on a 34 nm thick film with medium adherence.
Line 158 ff: The oxygen content in the thin film films should be explained in terms of residual gas pressure, purity of the precursers used etc.
line 221 ff: is there any indication of OH groups in the XPS data?
Fig13: The variance, as used, has a unit ( nm2)
Line 288: “The resistivity of TiN films deposited on Si wafers can reach as low as 128 μΩ” English could be revised.
4. Conclusions: very short (too short)
Comments on the Quality of English Languagesee text above
Author Response
Please see the attachment.
Author Response File: Author Response.pdf
Round 2
Reviewer 2 Report
Comments and Suggestions for Authorsthe improvements requested are considered well, so publication should be possible
Comments on the Quality of English Languagethe improvements requested are considered well, so publication should be possible
