Ternary chalcogenide-based sulfide materials with distorted morphologies such as BaZrS
3, CaZrS
3, and SrZrS
3, have recently gained much attention in optoelectronics and photovoltaics due to their high structural and thermal stability and compatibility with low-cost, earth-abundant synthesis routes.
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Ternary chalcogenide-based sulfide materials with distorted morphologies such as BaZrS
3, CaZrS
3, and SrZrS
3, have recently gained much attention in optoelectronics and photovoltaics due to their high structural and thermal stability and compatibility with low-cost, earth-abundant synthesis routes. However, their relatively large bandgaps often limit their suitability for near-infrared (NIR) photodetectors. Here, we conducted a comprehensive investigation of SrHfSe
3, a ternary chalcogenide with an orthorhombic crystal structure and distinctive needle-like morphology, as a promising candidate for NIR photodetection. SrHfSe
3 exhibits a direct bandgap of 1.02 eV, placing it well within the NIR range. Its robust structure, high temperature stability, phase stability and natural abundance make it a compelling material for next-generation, self-powered NIR photodetectors. An in-depth analysis of the SrHfSe
3-based photodetector was performed using SCAPS-1D simulations, focusing on key performance metrics such as J–V behavior, photoresponsivity, and specific detectivity. Device optimization was achieved by thoroughly altering each layer thickness, doping concentrations, and defect densities. Additionally, the influence of interface defects, absorber bandgap, and operating temperature was assessed to enhance the photoresponse. Under optimal conditions, the device achieved a short-circuit current density (Jsc) of 45.88 mA/cm
2, an open-circuit voltage (Voc) of 0.7152 V, a peak photoresponsivity of 0.85 AW
−1, and a detectivity of 2.26 × 10
14 Jones at 1100 nm. A broad spectral response spanning 700–1200 nm confirms its efficacy in the NIR region. These results position SrHfSe
3 as a strong contender for future NIR photodetectors and provide a foundation for experimental validation in advanced optoelectronic applications.
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