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Applications of 2D Semiconductors
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Applications of 2D Semiconductors

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Applied Physics General".

Deadline for manuscript submissions: closed (10 November 2021) | Viewed by 25722

Special Issue Editors

Dr. Zakhar Kudrynskyi

E-Mail Website
Guest Editor
Department of Mechanical, Materials and Manufacturing Engineering, Faculty of Engineering, The University of Nottingham, Nottingham, UK
Interests: thin-film coatings; 2D materials; van der Waals crystals; semiconductors; dielectrics; electrical insulation; dielectric breakdown; physical vapor deposition
Special Issues, Collections and Topics in MDPI journals
Dr. Mark Greenaway

E-Mail Website
Guest Editor
Department of Physics, Loughborough University, Loughborough LE11 3TT, UK
Interests: condensed matter theory; quantum transport; Van der Waals heterostructures; graphene; optical lattices; electronics; semiconductor superlattices; THz sources

Special Issue Information

Dear Colleagues,

Following the discovery of graphene in 2004, a wide class of novel two-dimensional (2D) materials with semiconducting properties have emerged, attracting unprecedented interest in the scientific community. Many of these materials have already been extensively studied from the perspectives of materials science, physics, and chemistry. This includes such crystals as phosphorene, transition metal dichalcogenides (MoS2, MoSe2, WS2, WSe2, etc.), post-transition metal chalcogenides (InSe, GaSe, GaTe, InTe, In2Se3, etc.), and so on. Though relatively young, the field of 2D semiconductors has rapidly expanded, discovering rich and exciting science in atomically thin layers of these compounds with finite bandgaps in the range from far infrared to deep ultraviolet. These materials exhibit outstanding electrical and optical properties originating from their unique thickness-dependent band structures, which make them highly desirable for applications in future electronics and optoelectronics. The large family of 2D semiconductors is continuously expanding, with new members bringing novel functionalities. This large and ever-growing library of materials enables the selection of optimal 2D semiconductors for specific applications, as well as the development of new device concepts. Furthermore, even greater advantages come from the possibility to engineer new artificial materials by combining their 2D layers together with different stacking sequence and rotational alignment, thus assembling the so-called van der Waals heterostructures with tailored properties.

This Special Issue aims to report on recent advances and emerging applications of novel 2D semiconductors in flexible and ultra-thin electronics, optoelectronics, catalysis, etc.

Dr. Zakhar Kudrynskyi
Dr. Mark Greenaway
Guest Editors

Manuscript Submission Information

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Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • 2D semiconductors
  • van der Waals heterostructures
  • photosensors
  • flexible electronics
  • optoelectronics
  • catalysis

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Published Papers (4 papers)

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Research

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12 pages, 8715 KiB  
Article
Charge Carrier Transport in Van Der Waals Semiconductor InSe Intercalated with RbNO3 Probed by Direct Current Methods
by Zakhar R. Kudrynskyi, Illya V. Mintyanskii, Petro I. Savitskii and Zakhar D. Kovalyuk
Appl. Sci. 2021, 11(11), 5181; https://doi.org/10.3390/app11115181 - 2 Jun 2021
Cited by 1 | Viewed by 2075
Abstract
Layered van der Waals (vdW) semiconductors show great promise to overcome limitations imposed by traditional semiconductor materials. The synergistic combination of vdW semiconductors with other functional materials can offer novel working principles and device concepts for future nano- and optoelectronics. Herein, we investigate [...] Read more.
Layered van der Waals (vdW) semiconductors show great promise to overcome limitations imposed by traditional semiconductor materials. The synergistic combination of vdW semiconductors with other functional materials can offer novel working principles and device concepts for future nano- and optoelectronics. Herein, we investigate the influence of the intercalation of semiconducting n-type InSe vdW crystals with ferroelectric rubidium nitrate (RbNO3) on the transport of charge carriers along and across the layers. The apparent maxima in the temperature dependences of the Hall coefficient are explained in the framework of a model that predicts, along with three-dimensional carriers, the existence of two-dimensional ones contributing only to the conductivity along the layers. The revealed increase of the conductivity anisotropy and its activation variation with temperature, which is mainly due to a decrease of the conductivity across the layers, confirm a two-dimensionalization of electron gas in n-InSe after insertion of the ferroelectric. From the numerical analysis, we determined the densities of carriers of both types, concentrations of donors and acceptors, as well as the value of the interlayer barrier. Full article
(This article belongs to the Special Issue Applications of 2D Semiconductors)
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12 pages, 5336 KiB  
Article
Raman Analysis of E2 (High) and A1 (LO) Phonon to the Stress-Free GaN Grown on Sputtered AlN/Graphene Buffer Layer
by Yu Zeng, Jing Ning, Jincheng Zhang, Yanqing Jia, Chaochao Yan, Boyu Wang and Dong Wang
Appl. Sci. 2020, 10(24), 8814; https://doi.org/10.3390/app10248814 - 9 Dec 2020
Cited by 38 | Viewed by 6140
Abstract
The realization of high-speed and high-power gallium nitride (GaN)-based devices using high-quality GaN/Aluminum nitride (AlN) materials has become a hot topic. Raman spectroscopy has proven to be very useful in analyzing the characteristics of wide band gap materials, which reveals the information interaction [...] Read more.
The realization of high-speed and high-power gallium nitride (GaN)-based devices using high-quality GaN/Aluminum nitride (AlN) materials has become a hot topic. Raman spectroscopy has proven to be very useful in analyzing the characteristics of wide band gap materials, which reveals the information interaction of sample and phonon dynamics. Four GaN samples grown on different types of buffer layers were fabricated and the influence of graphene and sputtered AlN on GaN epitaxial layers were analyzed through the E2 (high) and A1 (LO) phonon. The relationship between the frequency shift of E2 (high) phonons and the biaxial stress indicated that the GaN grown on the graphene/sputtered AlN buffer layer was stress-free. Furthermore, the phonon lifetimes of A1 (LO) mode in GaN grown on graphene/sputtered AlN buffer layer suggested that carrier migration of GaN received minimal interference. Finally, the Raman spectra of graphene with the sputtered AlN interlayer has more disorder and the monolayer graphene was also more conducive to nucleation of GaN films. These results will have significant impact on the heteroepitaxy of high-quality thin GaN films embedded with a graphene/sputtered AlN buffer, and will facilitate the preparation of high-speed GaN-based optoelectronic devices. Full article
(This article belongs to the Special Issue Applications of 2D Semiconductors)
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9 pages, 2500 KiB  
Article
Post-synthesis Tellurium Doping Induced Mirror Twin Boundaries in Monolayer Molybdenum Disulfide
by Xujing Ji, Manjunath Nallappagari Krishnamurthy, Danhui Lv, Jixue Li and Chuanhong Jin
Appl. Sci. 2020, 10(14), 4758; https://doi.org/10.3390/app10144758 - 10 Jul 2020
Cited by 3 | Viewed by 2404
Abstract
Mirror twin boundaries (MTBs) have brought intriguing one-dimensional physics into the host 2D crystal. In this letter, we reported a chalcogen atom exchange route to induce MTBs into as-formed MoS2 monolayers via post-synthesis tellurium doping. Results from annular dark-field scanning transition electron [...] Read more.
Mirror twin boundaries (MTBs) have brought intriguing one-dimensional physics into the host 2D crystal. In this letter, we reported a chalcogen atom exchange route to induce MTBs into as-formed MoS2 monolayers via post-synthesis tellurium doping. Results from annular dark-field scanning transition electron microscope (ADF-STEM) characterizations revealed that tellurium substituted the sulfur sublattices of MoS2 preferentially around the edge areas. A large number of MTBs in a configuration of 4|4P-Te was induced therein. Analysis of the lattice structures around MTBs revealed that such a tellurium-substitution-induced MTB formation is an energy-favored process to reduce the strain upon a high ratio of tellurium doping. Full article
(This article belongs to the Special Issue Applications of 2D Semiconductors)
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Review

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36 pages, 46351 KiB  
Review
A Review of the Synthesis, Properties, and Applications of Bulk and Two-Dimensional Tin (II) Sulfide (SnS)
by Kane J. Norton, Firoz Alam and David J. Lewis
Appl. Sci. 2021, 11(5), 2062; https://doi.org/10.3390/app11052062 - 26 Feb 2021
Cited by 48 | Viewed by 14244
Abstract
Tin(II) sulfide (SnS) is an attractive semiconductor for solar energy conversion in thin film devices due to its bandgap of around 1.3 eV in its orthorhombic polymorph, and a band gap energy of 1.5–1.7 eV for the cubic polymorph—both of which are commensurate [...] Read more.
Tin(II) sulfide (SnS) is an attractive semiconductor for solar energy conversion in thin film devices due to its bandgap of around 1.3 eV in its orthorhombic polymorph, and a band gap energy of 1.5–1.7 eV for the cubic polymorph—both of which are commensurate with efficient light harvesting, combined with a high absorption coefficient (10−4 cm−1) across the NIR–visible region of the electromagnetic spectrum, leading to theoretical power conversion efficiencies >30%. The high natural abundance and a relative lack of toxicity of its constituent elements means that such devices could potentially be inexpensive, sustainable, and accessible to most nations. SnS exists in its orthorhombic form as a layer structure similar to black phosphorus; therefore, the bandgap energy can be tuned by thinning the material to nanoscale dimensions. These and other properties enable SnS applications in optoelectronic devices (photovoltaics, photodetectors), lithium- and sodium-ion batteries, and sensors among others with a significant potential for a variety of future applications. The synthetic routes, structural, optical and electronic properties as well as their applications (in particular photonic applications and energy storage) of bulk and 2D tin(II) sulfide are reviewed herein. Full article
(This article belongs to the Special Issue Applications of 2D Semiconductors)
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