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Applied Sciences
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Design and Study of Type-2 Superlattice Photodetectors
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Design and Study of Type-2 Superlattice Photodetectors

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Applied Physics General".

Deadline for manuscript submissions: closed (30 March 2023) | Viewed by 5897

Special Issue Editors

Dr. Arash Dehzangi

E-Mail Website
Guest Editor
Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208, USA
Interests: semiconductor device and processing; optoelectronic devices; nanoelectronics; quantum devices; infrared photodetectors; type II superlattice
Dr. Yiyun Zhang

E-Mail Website
Guest Editor
Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Interests: light-emitting diodes (LEDs); laser diodes (LDs); GaN; quantum wells (QWs)

Special Issue Information

Dear Colleagues,

In the last two decades, there has been a drastic change in research and applications of strain-layer type-II superlattice (T2SL) infrared photodetectors. Given the unique flexibility of the T2SL material in covering all infrared spectrums, along with the capability of precise bandgap engineering and availability of lattice-matched substrate, this trend is expected to continue at an even faster rate. Already, novel devices have been proposed based on T2SL material exploring different applications in military, industry, health and medicine. This trend seems to be moving forward at a faster pace toward the third generation of infrared detectors (multispectral imaging, multicolor functionality and other on-chip functions).

In this framework, we are glad to edit this Special Issue on “Design and Study of Type-2 Superlattice Photodetectors”. This Special Issue aims to provide an overview of the newest and most innovative research work in all aspects of type-2 superlattice photodetectors, including (but not limited to) material design, growth, fabrication, passivation, device design, testing, as well as prospects for future development and applications.

Dr. Arash Dehzangi
Dr. Yiyun Zhang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Applied Sciences is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • type II superlattice
  • infrared photodetectors
  • epitaxial growth
  • dark current
  • quantum efficiency
  • bandgap engineering
  • strained-layer superlattice
  • passivation

Published Papers (3 papers)

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Research

12 pages, 1819 KiB  
Article
Complementary Barrier Infrared Detector Architecture for Long-Wavelength Infrared InAs/InAsSb Type-II Superlattice
by David Z. Ting, Alexander Soibel, Arezou Khoshakhlagh, Anita M. Fisher, Brian J. Pepper, Sam A. Keo, Cory J. Hill, Sir B. Rafol and Sarath D. Gunapala
Appl. Sci. 2022, 12(24), 12508; https://doi.org/10.3390/app122412508 - 7 Dec 2022
Cited by 1 | Viewed by 1844
Abstract
We describe the challenges for long- and very long-wavelength InAs/InAsSb type-II strained-layer superlattice infrared detectors, and provide an overview of progress in device architecture development for addressing them. Specifically, we have explored the complementary barrier infrared detector (CBIRD) that contains p-type InAs/InAsSb [...] Read more.
We describe the challenges for long- and very long-wavelength InAs/InAsSb type-II strained-layer superlattice infrared detectors, and provide an overview of progress in device architecture development for addressing them. Specifically, we have explored the complementary barrier infrared detector (CBIRD) that contains p-type InAs/InAsSb T2SLS absorbers for enhancing quantum efficiency, while also suppressing surface shunt current. We describe selected device results, and also provide references to additional results and more in-depth discussions. Full article
(This article belongs to the Special Issue Design and Study of Type-2 Superlattice Photodetectors)
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12 pages, 2467 KiB  
Article
Temperature Dependence Study of Electrical and Electro-Optical Performances of Midwave Infrared Ga-Free T2SL Barrier Photodetector
by Maxime Bouschet, Vignesh Arounassalame, Anthony Ramiandrasoa, Isabelle Ribet-Mohamed, Jean-Philippe Perez, Nicolas Péré-Laperne and Philippe Christol
Appl. Sci. 2022, 12(20), 10358; https://doi.org/10.3390/app122010358 - 14 Oct 2022
Cited by 2 | Viewed by 1826
Abstract
In this paper, we report on temperature dependence performances of a midwave infrared (MWIR) Ga-free InAs/InAsSb type-II superlattice (T2SL) barrier (XBn) photodetector grown by molecular beam epitaxy on n-type GaSb substrate. The T2SL structure, with a 3 µm thick active region, was processed [...] Read more.
In this paper, we report on temperature dependence performances of a midwave infrared (MWIR) Ga-free InAs/InAsSb type-II superlattice (T2SL) barrier (XBn) photodetector grown by molecular beam epitaxy on n-type GaSb substrate. The T2SL structure, with a 3 µm thick active region, was processed in a mesa device in order to perform dark current measurements and spectral photoresponse as a function of temperature. Analyses of these temperature dependence characterizations help us to improve the design of Ga-free T2SL MWIR XBn detectors. Full article
(This article belongs to the Special Issue Design and Study of Type-2 Superlattice Photodetectors)
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10 pages, 3466 KiB  
Article
Comparative Study on Planar Type-II Strained-Layer Superlattice Infrared Photodetectors Fabricated by Ion-Implantation
by Arash Dehzangi
Appl. Sci. 2022, 12(12), 6114; https://doi.org/10.3390/app12126114 - 16 Jun 2022
Viewed by 1587
Abstract
Recent progress in Type-II strained layer superlattice (SLS) material systems has offered viable alternatives towards achieving large format, small-pitch, and low-cost focal plane arrays for different military and commercial applications. For focal plane array fabrication, in order to address difficulties associated with mesa-isolation [...] Read more.
Recent progress in Type-II strained layer superlattice (SLS) material systems has offered viable alternatives towards achieving large format, small-pitch, and low-cost focal plane arrays for different military and commercial applications. For focal plane array fabrication, in order to address difficulties associated with mesa-isolation etching or the complex surface treatment/ passivation process, planar structures have been considered. In this work, a comparative study on the recent progress on the planar SLS photodetector using ion-implantation for device isolation is presented. The devices presented here are nBn and pBn heterostructure InAs/InAsSb SLS photodetectors, where Zn and Si were chosen as the ion implants, respectively. The electrical and optical performance of the planar devices were compared to each other and with associated mesa-etched fabricated devices, to give a deeper view of the device performance. Full article
(This article belongs to the Special Issue Design and Study of Type-2 Superlattice Photodetectors)
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