Oxide Thin Film Transistors
A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Materials Science and Engineering".
Deadline for manuscript submissions: closed (30 April 2019) | Viewed by 7038
Special Issue Editor
Interests: oxide thin-film transistors; solution process; advanced memory; biosensors; phototransistors; CMOS image sensors
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Thin-film transistors (TFTs) have been in extensive use as on/off switches and current-driving devices for various applications since the concept of TFTs was first reported. TFTs are considered one of the most important devices that controls each pixel in active-matrix flat panel displays (AMFPD). TFTs are widely used, not only in liquid crystals (LCs), but also in organic light-emitting diode (OLED) displays, from mobile displays to wide-sized displays. In particular, oxide TFTs have gained significant attention due to their superior performance compared to conventional amorphous Si (a–Si) TFTs, with high mobility, low off-current, and high transparency. Furthermore, oxide TFTs are very attractive for various sensor applications (bio, photo, gas, pressure, etc.) due to their merits, including high sensitivity and compatibility for large-area deposition. This Special Issue of the Applied Sciences, "Oxide Thin-Film Transistors", will cover recent advances in oxide TFT technology. The main topics are as follows: 1) device performance and stability, covering research into improving device performance and stability through material engineering, structural engineering, and post-/pre-treatment engineering of oxide TFTs. 2) Flexible and wearable oxide TFTs. This research deals with wavy, stiff, and neutralizing structures that can improve mechanical stability. 3) Various oxide TFT-based sensors and memory devices. This research includes advanced structures and materials that react to external energy sources such as light, bias, atmosphere, etc. 4) Various oxide materials. This research includes oxide materials such as hafnium oxide (HfOx), zirconium oxide (ZrOx), indium-zinc-oxide (IZO), indium-gallium-zinc-oxide (IGZO), indium-tin-zinc-oxide (ITZO), indium-tin-oxide (ITO), etc. for gate insulators, channels and electrodes.
Prof. Hyun Jae Kim
Guest Editor
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Keywords
- Thin-film transistors
- Oxide semiconductor materials
- Transparent electrodes
- Solution process (sol-gel, ink jet printing, etc.)
- Reliability (positive/negative voltage bias, light illumination, temperature, etc.)
- Flexibility and wearability
- Stretchability
- Oxide-based application (biosensors, photo sensors, gas sensors, pressure sensors, and memory etc.)
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