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Applied Sciences
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Organic-Inorganic Functional Materials for Energy and Display Applications
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Organic-Inorganic Functional Materials for Energy and Display Applications

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Materials Science and Engineering".

Deadline for manuscript submissions: closed (30 June 2020) | Viewed by 9945

Special Issue Editor

Prof. Dr. Byoungnam Park

E-Mail Website
Guest Editor
Department of Materials Science and Engineering, Hongik University 72-1, Sangsu-dong, Mapo-gu, Seoul 04066, Korea
Interests: Li-ion battery; photovoltaics; organic–inorganic perovskite; organic semiconductors; transition metal oxides; colloidal quantum dots; photodetectors; light-emitting-diodes
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Organic–inorganic hybrid functional materials are potential platforms for applied science for new physical phenomena, as well as highly efficient device applications in multidisciplinary research fields. In designing and optimizing material properties using the hybrid system, importantly, tuning the activity of organic and inorganic components remains elusive even if the combinations have greatly extended structural and functional flexibility over single component materials demonstrating much success in the energy and display research fields. Here, we will center on organic–inorganic hybrid materials in energy conversion and storage, and light-emitting display applications, emphasizing their challenges and opportunities to achieve structural and functional connectivity for better device performance at the nanoscale through controlling the activity of the individual materials. This Special Issue is devoted to interdisciplinary efforts to realize new physical phenomenon as well as highly efficient energy and display devices, focusing on materials processing, fabrication, and characterizations with various strategies.

Prof. Byoungnam Park
Guest Editor

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Keywords

  • Li-ion battery
  • solution process
  • organic-inorganic perovskite
  • photovoltaic
  • quantum sots
  • LEDs
  • nanostructure
  • sensors

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Published Papers (4 papers)

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Research

11 pages, 2039 KiB  
Article
Understanding Temporal Evolution of Electroluminescence Intensity in Lead Sulfide (PbS) Colloidal Quantum Dot Infrared Light-Emitting Diodes
by Minkyoung Kim and Byoungnam Park
Appl. Sci. 2020, 10(21), 7440; https://doi.org/10.3390/app10217440 - 23 Oct 2020
Cited by 7 | Viewed by 2921
Abstract
We, for the first time, report a temporal evolution of the electroluminescence (EL) intensity in lead sulfide (PbS) colloidal quantum dot (CQD) infrared light-emitting diodes. The EL intensity was varied during infrared light emission, and its origin is attributed to competition between the [...] Read more.
We, for the first time, report a temporal evolution of the electroluminescence (EL) intensity in lead sulfide (PbS) colloidal quantum dot (CQD) infrared light-emitting diodes. The EL intensity was varied during infrared light emission, and its origin is attributed to competition between the achievement of charge balance associated with interfacial charging at the PbS/ZnO CQD interface and the electric-field induced luminescence quenching. The effect of multi-carrier emission on the enhanced EL intensity is discussed relating to shifting in the wavelength at the peak EL intensity. Full article
(This article belongs to the Special Issue Organic-Inorganic Functional Materials for Energy and Display Applications)
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10 pages, 1735 KiB  
Article
Electrical Signature of Ultrasound-Induced Anisotropic Self-Assembly of Poly(3-Hexylthiophene) (P3HT) during Channel Formation
by Youngjun Kim and Byoung Nam Park
Appl. Sci. 2020, 10(19), 6886; https://doi.org/10.3390/app10196886 - 1 Oct 2020
Cited by 6 | Viewed by 2333
Abstract
We probed ultrasound irradiation-induced structural ordering of poly(3-hexylthiophene) (P3HT) chains during solidification of a sonicated P3HT solution by monitoring the temporal evolution of the electrical and spectroscopic signals. We observed a peak source-drain current in the test devices during the electrical channel formation, [...] Read more.
We probed ultrasound irradiation-induced structural ordering of poly(3-hexylthiophene) (P3HT) chains during solidification of a sonicated P3HT solution by monitoring the temporal evolution of the electrical and spectroscopic signals. We observed a peak source-drain current in the test devices during the electrical channel formation, followed by a significant decrease, which has not been observed in the pristine P3HT solution as the solvent evaporates. Through P3HT concentration-dependent gated-sheet conductance and in-situ Raman spectroscopy measurements during channel formation, we found that the competition between aggregation of the disentangled P3HT chains in solution by sonication and the concentration-dependent chain interactions with solvent evaporation led to a distinct electrical signature in the channel formation of the sonicated P3HT film compared to that of the pristine P3HT. The finding provides insights into new opportunities through optimization between the thermodynamic and kinetic considerations in designing pre-deposition treatments for enhanced charge transport. Full article
(This article belongs to the Special Issue Organic-Inorganic Functional Materials for Energy and Display Applications)
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7 pages, 2062 KiB  
Article
Thermoelectric Transport Properties of n-Type Sb-doped (Hf,Zr,Ti)NiSn Half-Heusler Alloys Prepared by Temperature-Regulated Melt Spinning and Spark Plasma Sintering
by Ki Wook Bae, Jeong Yun Hwang, Sang-il Kim, Hyung Mo Jeong, Sunuk Kim, Jae-Hong Lim, Hyun-Sik Kim and Kyu Hyoung Lee
Appl. Sci. 2020, 10(14), 4963; https://doi.org/10.3390/app10144963 - 19 Jul 2020
Cited by 15 | Viewed by 2390
Abstract
Herein we report a significantly reduced lattice thermal conductivity of Sb-doped Hf0.35Zr0.35Ti0.3NiSn half-Heusler alloys with sub-micron grains (grain size of ~300 nm). Polycrystalline bulks of Hf0.35Zr0.35Ti0.3NiSn1−xSbx ( [...] Read more.
Herein we report a significantly reduced lattice thermal conductivity of Sb-doped Hf0.35Zr0.35Ti0.3NiSn half-Heusler alloys with sub-micron grains (grain size of ~300 nm). Polycrystalline bulks of Hf0.35Zr0.35Ti0.3NiSn1−xSbx (x = 0.01, 0.02, 0.03) with a complete single half-Heusler phase are prepared using temperature-regulated melt spinning and subsequent spark plasma sintering without a long annealing process. In these submicron-grained bulks, a very low lattice thermal conductivity value of ~2.4 W m−1 K−1 is obtained at 300 K due to the intensified phonon scatterings by highly dense grain boundaries and point-defects (Zr and Ti substituted at Hf-sites). A maximum thermoelectric figure of merit, zT, of 0.5 at 800 K is obtained in Hf0.35Zr0.35Ti0.3NiSn0.99Sb0.01. Full article
(This article belongs to the Special Issue Organic-Inorganic Functional Materials for Energy and Display Applications)
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7 pages, 1691 KiB  
Article
Hf-Doping Effect on the Thermoelectric Transport Properties of n-Type Cu0.01Bi2Te2.7Se0.3
by Jeong Yun Hwang, Sura Choi, Sang-il Kim, Jae-Hong Lim, Soon-Mok Choi, Heesun Yang, Hyun-Sik Kim and Kyu Hyoung Lee
Appl. Sci. 2020, 10(14), 4875; https://doi.org/10.3390/app10144875 - 16 Jul 2020
Cited by 4 | Viewed by 1978
Abstract
Polycrystalline bulks of Hf-doped Cu0.01Bi2Te2.7Se0.3 are prepared via a conventional melt-solidification process and subsequent spark plasma sintering technology, and their thermoelectric performances are evaluated. To elucidate the effect of Hf-doping on the thermoelectric properties of n [...] Read more.
Polycrystalline bulks of Hf-doped Cu0.01Bi2Te2.7Se0.3 are prepared via a conventional melt-solidification process and subsequent spark plasma sintering technology, and their thermoelectric performances are evaluated. To elucidate the effect of Hf-doping on the thermoelectric properties of n-type Cu0.01Bi2Te2.7Se0.3, electronic and thermal transport parameters are estimated from the measured data. An enlarged density-of-states effective mass (from ~0.92 m0 to ~1.24 m0) is obtained due to the band modification, and the power factor is improved by Hf-doping benefitting from the increase in carrier concentration while retaining carrier mobility. Additionally, lattice thermal conductivity is reduced due to the intensified point defect phonon scattering that originated from the mass difference between Bi and Hf. Resultantly, a peak thermoelectric figure of merit zT of 0.83 is obtained at 320 K for Cu0.01Bi1.925Hf0.075Te2.7Se0.3, which is a ~12% enhancement compared to that of the pristine Cu0.01Bi2Te2.7Se0.3. Full article
(This article belongs to the Special Issue Organic-Inorganic Functional Materials for Energy and Display Applications)
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