New Advances in Memristors: Design and Applications

A special issue of Chips (ISSN 2674-0729).

Deadline for manuscript submissions: 31 December 2024 | Viewed by 1375

Special Issue Editor


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Guest Editor
Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
Interests: 2D materials; MOCVD; memristor; nanoelectronics; flexible electronics

Special Issue Information

Dear Colleagues,

Advances in memory technology, covering materials, device structures, and applications, signify a crucial shift in the landscape of modern computing. Material breakthroughs, including the development of innovative compounds and structures, have paved the way for next-generation memory devices. From NAND flash to emerging technologies such as resistive random-access memory (RRAM) and phase-change memory (PCM), these materials offer improved performance, increased densities, and enhanced reliability.

Simultaneously, improvements in memristor device architectures, such as crossbar arrays and 3D stacking, have expanded storage capacities and processing speeds. By vertically integrating multiple memory layers and emulating neural connections, these architectures optimize spatial efficiency, enhancing not only storage but also computation paradigms. These advancements have wide-ranging applications across industries, revolutionizing data storage and processing. From enabling edge computing for real-time analytics to stimulating advancements in artificial intelligence and autonomous systems, the impact of these memory technologies is immense. As research continues to push the boundaries of possibilities, the future promises even more transformative innovations, reshaping the technological landscape and unlocking the frontiers of computing.

This Special Issue aims to collect submissions related to the design and applications of memristors. Both research articles and reviews are welcome.

Dr. Arindam Bala
Guest Editor

Manuscript Submission Information

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Keywords

  • memristor
  • neuromorphic computing
  • circuit integration
  • scaling
  • resistive switching
  • crossbar array
  • multilevel switching
  • energy efficiency
  • novel materials

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Published Papers (1 paper)

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Review

23 pages, 8739 KiB  
Review
Oxygen Vacancy Engineering and Its Impact on Resistive Switching of Oxide Thin Films for Memory and Neuromorphic Applications
by Biswajit Jana and Ayan Roy Chaudhuri
Chips 2024, 3(3), 235-257; https://doi.org/10.3390/chips3030012 - 6 Sep 2024
Viewed by 993
Abstract
Oxygen vacancy engineering in metal oxides is a propitious route to modulate their resistive switching properties for memory and neuromorphic applications. This review provides an account of the research works on tailoring RS behavior in oxide thin-film-based memristor devices by oxygen vacancy engineering. [...] Read more.
Oxygen vacancy engineering in metal oxides is a propitious route to modulate their resistive switching properties for memory and neuromorphic applications. This review provides an account of the research works on tailoring RS behavior in oxide thin-film-based memristor devices by oxygen vacancy engineering. We discuss the recent research progress on controlling oxygen vacancy concentration in metal oxide thin films and its impact on their resistive switching properties for application in electronic memory and neuromorphic computing devices. Full article
(This article belongs to the Special Issue New Advances in Memristors: Design and Applications)
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