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Design and Implementation of RF Front-Ends for Next Generation Communication...
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Design and Implementation of RF Front-Ends for Next Generation Communication Systems

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Microwave and Wireless Communications".

Deadline for manuscript submissions: closed (31 October 2022) | Viewed by 3336

Special Issue Editors

Prof. Dr. Heng-Tung Hsu

E-Mail Website
Guest Editor
International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Interests: RFIC; active and passive microwave components; antennas; antenna arrays
Prof. Dr. Jeng-Han Tsai

E-Mail Website
Guest Editor
RF Integrated Circuits Laboratory, Department of Electrical Engineering, National Taiwan Normal University, Taipei 11677, Taiwan
Interests: RFIC; MMIC; RF power amplifier
Dr. Kuniyuki Kakushima

E-Mail Website
Guest Editor
Iwai Laboratory, Frontier Research Center, Tokyo Institute of Technology, Tokyo 152-8550, Japan
Interests: ferroelectric memory; power devices; high energy sensors; dielectrics

Special Issue Information

Dear Colleagues,

The rapid increase in the demands of data transmission rates driven by emerging applications has imposed stringent requirements in the operation frequency and bandwidth for next-generation wireless communication systems. To accommodate the requirements of modern communication systems, new design and implementation technologies for front-end subsystems are necessary. New technologies that lead to compact size, ease of integration, and performance improvement are critical at microwave/millimeter-wave frequencies. This Special Issue is thus devoted to the presentation of the latest developments in passive and active components and circuits in the front ends for the next generation of communication systems. All researchers in the field are invited to contribute their original unpublished works. Both research and review papers are welcome.

Topics of interest include but are not limited to:

  • Device technologies for microwave/millimeter-wave applications;
  • Power-combining techniques;
  • Low-noise amplifier circuits;
  • Power amplifier circuits;
  • Switches;
  • Antennas;
  • Antenna arrays;
  • Filters;
  • Passive components;
  • Materials for microwave/millimeter-wave applications.

Prof. Dr. Heng-Tung Hsu
Prof. Dr. Jeng-Han Tsai
Dr. Kuniyuki Kakushima
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • power combiners
  • low-noise amplifier
  • power amplifier
  • switch, antenna
  • antenna array
  • filter
  • passive components
  • front-end subsystems

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Published Papers (1 paper)

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Research

21 pages, 7334 KiB  
Article
Predicting the Performance of a 26 GHz Transconductance Modulated Downconversion Mixer as a Function of LO Drive and DC Bias
by Edward A. Ball
Electronics 2022, 11(16), 2516; https://doi.org/10.3390/electronics11162516 - 11 Aug 2022
Cited by 1 | Viewed by 1921
Abstract
The dependency of RF performance on the local oscillator (LO) drive amplitude and DC bias is an important topic for RF mixers, especially as carrier frequency increases and generation of RF power thus becomes more complex. The prediction of mixer performance, without initial [...] Read more.
The dependency of RF performance on the local oscillator (LO) drive amplitude and DC bias is an important topic for RF mixers, especially as carrier frequency increases and generation of RF power thus becomes more complex. The prediction of mixer performance, without initial reliance on full circuit simulations, can provide important insights. In this work, mathematical models without the prior use of circuit simulation are developed, leading to a strategy to predict the conversion gain (Gc), DC current, 1 dB input compression point (IP1dB) and third order input intercept point (IIP3) for a SiGe bipolar transistor transconductance mixer. The models show the possibility to trade-off LO RF power and DC bias to achieve a desired performance. The concepts allow a prediction of the necessary DC bias required to support a chosen LO level and desired conversion transconductance or linearity. The mathematical model results, circuit simulation results, and measured hardware results from a 26 GHz prototype of a single-ended mixer are presented and compared, showing good agreement. In a lab-measured example, LO power reduction from +10 dBm to +3 dBm resulted in only a 1 dB reduction in conversion gain, by modifying the DC bias as predicted. The peak conversion gain predicted by the models is within 2.0 dB of circuit simulation and 2.5 dB of measured PCB results. The RMS error for predicted DC current, compared to circuit simulation, is 1.9 mA or better. Full article
(This article belongs to the Special Issue Design and Implementation of RF Front-Ends for Next Generation Communication Systems)
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