energies-logo

Journal Browser

Journal Browser

Power Semiconductor Devices: Optimization, Characterization and Applications

A special issue of Energies (ISSN 1996-1073). This special issue belongs to the section "F: Electrical Engineering".

Deadline for manuscript submissions: closed (31 August 2024) | Viewed by 3085

Special Issue Editor


E-Mail Website
Guest Editor
School of Automation Science and Electrical Engineering, Beihang University, Beijing 100191, China
Interests: power electronics; power semiconductor device; wide-bandgap semiconductor device, package and power modules

Special Issue Information

Dear Colleagues,

The Guest Editor is currently inviting submissions for a Special Issue of Energies focused on the subject area of “Power Semiconductor Devices: Optimization, Characterization, and Applications”. Power semiconductor devices are fundamental to modern power converters, and their high performance enables power systems to achieve greater efficiency. In recent years, there have been numerous emerging techniques for power semiconductor devices, as well as related application issues. Additionally, package & module design and power integration circuits are also intriguing topics of interest for researchers in this field.

This Special Issue will deal with optimization, characterization, and related application issues of power semiconductor devices. Topics of interest for publication include, but are not limited to:

  • High Voltage Silicon Power Devices;
  • Medium and Low Voltage Silicon Power Devices;
  • Lateral GaN Devices and Reliability Issues;
  • Vertical GaN Devices;
  • Novel Structure of SiC Devices;
  • Ultra-High Voltage WBG Power Devices;
  • Powe Module Design & Development;
  • Reliability and Health Monitoring for Power Device and Modules;
  • Circuits and ICs for Drivers & Device Protection

Dr. Gang Lyu
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Energies is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • power semiconductor devices
  • silicon power devices
  • wide bandgap package and modules
  • device reliability
  • power integration circuits

Benefits of Publishing in a Special Issue

  • Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
  • Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
  • Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
  • External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
  • e-Book format: Special Issues with more than 10 articles can be published as dedicated e-books, ensuring wide and rapid dissemination.

Further information on MDPI's Special Issue policies can be found here.

Published Papers (1 paper)

Order results
Result details
Select all
Export citation of selected articles as:

Review

22 pages, 5569 KiB  
Review
Review on Short-Circuit Protection Methods for SiC MOSFETs
by Gang Lyu, Hamid Ali, Hongrui Tan, Lyuzhang Peng and Xiaofeng Ding
Energies 2024, 17(17), 4523; https://doi.org/10.3390/en17174523 - 9 Sep 2024
Cited by 2 | Viewed by 2652
Abstract
SiC MOSFETs have been a game-changer in the domain of power electronics, thanks to their exceptional electrical traits. They are endowed with a high breakdown voltage, reduced on-resistance, and superior thermal conductivity, which make them supremely suitable for high-power and resilient applications across [...] Read more.
SiC MOSFETs have been a game-changer in the domain of power electronics, thanks to their exceptional electrical traits. They are endowed with a high breakdown voltage, reduced on-resistance, and superior thermal conductivity, which make them supremely suitable for high-power and resilient applications across aviation, automotive, and renewable energy sectors. Despite their intrinsic advantages, SiC MOSFETs also necessitate advanced safeguarding mechanisms to counteract the vulnerability to short-circuit conditions due to their lower short-circuit robustness. This review paper offers an in-depth analysis of the array of short-circuit protection (SCP) methods applied to SiC MOSFETs. This paper scrutinizes techniques such as desaturation detection, di/dt detection, gate charge characteristics monitoring, two-dimensional monitoring, Rogowski coil-based detection, and two-stage turn-off strategies. The paper meticulously explores the operational principles, merits, and limitations of each method, with an emphasis on their adaptability to various fault types, including hard switching faults and load-induced faults. This review acts as a thorough compendium, guiding the choice of pertinent SCP strategies, ensuring the secure and efficient functioning of SiC MOSFETs in demanding applications. Full article
Show Figures

Figure 1

Back to TopTop