Power Semiconductor Devices: Optimization, Characterization and Applications
A special issue of Energies (ISSN 1996-1073). This special issue belongs to the section "F: Electrical Engineering".
Deadline for manuscript submissions: closed (31 August 2024) | Viewed by 3085
Special Issue Editor
Special Issue Information
Dear Colleagues,
The Guest Editor is currently inviting submissions for a Special Issue of Energies focused on the subject area of “Power Semiconductor Devices: Optimization, Characterization, and Applications”. Power semiconductor devices are fundamental to modern power converters, and their high performance enables power systems to achieve greater efficiency. In recent years, there have been numerous emerging techniques for power semiconductor devices, as well as related application issues. Additionally, package & module design and power integration circuits are also intriguing topics of interest for researchers in this field.
This Special Issue will deal with optimization, characterization, and related application issues of power semiconductor devices. Topics of interest for publication include, but are not limited to:
- High Voltage Silicon Power Devices;
- Medium and Low Voltage Silicon Power Devices;
- Lateral GaN Devices and Reliability Issues;
- Vertical GaN Devices;
- Novel Structure of SiC Devices;
- Ultra-High Voltage WBG Power Devices;
- Powe Module Design & Development;
- Reliability and Health Monitoring for Power Device and Modules;
- Circuits and ICs for Drivers & Device Protection
Dr. Gang Lyu
Guest Editor
Manuscript Submission Information
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Keywords
- power semiconductor devices
- silicon power devices
- wide bandgap package and modules
- device reliability
- power integration circuits
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