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Thermal Management of Power Electronic Devices, Circuits, and Systems: Innovative Solutions for the WBG Era

A special issue of Energies (ISSN 1996-1073). This special issue belongs to the section "J: Thermal Management".

Deadline for manuscript submissions: closed (18 March 2022) | Viewed by 13511

Special Issue Editor

Prof. Dr. Alberto Castellazzi

E-Mail Website
Guest Editor
Solid-State Power Processing (SP2) Lab, Department of Mechanical and Electrical Systems Engineering, Faculty of Engineering, Kyoto University of Advanced Science, Kyoto 615-8577, Japan
Interests: power electronics; power semiconductor devices; packaging; thermal management
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Wide-band-gap semiconductor-based power electronic conversion has become an industrial reality. To fully exploit the superior semiconductor characteristics, dedicated developments in their thermal management are required, which can help to optimize volumetric and gravimetric power density, efficiency, and reliability.

This Special Issue aims to gather innovative ideas and solutions in both the design and deployment of heat extraction and handling techniques in the presence of very high heat-generation rates. Within such a context, the production of high-temperature compatible models, technologies, and assemblies is a particularly relevant niche topic, as it underprops significant innovation in system functionality and performance in some pivotal application domains of our society, such as, for instance, transportation.

The focus is not only on the semiconductor device or module, but also on passive components and auxiliary circuitry (gate-drivers, analogue and digital control boards, sensors) in high switching frequency, high power density or high-temperature circuits.

Original contributions are solicited, which can contribute to broaden and deepen specialist knowledge and understanding in this highly important area of solid-state power conversion and at the same time promote cross-boundary approaches among traditionally standalone disciplines, such as electrical and thermomechanical engineering.

Prof. Alberto Castellazzi
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Energies is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • power electronic devices
  • thermal management
  • cooling
  • wide-band-gap semiconductors
  • silicon carbide
  • gallium nitride
  • high power density
  • integration
  • thermal design

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Published Papers (3 papers)

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Research

15 pages, 5162 KiB  
Article
Degradation Mechanism of Pressure-Assisted Sintered Silver by Thermal Shock Test
by Keisuke Wakamoto, Takukazu Otsuka, Ken Nakahara and Takahiro Namazu
Energies 2021, 14(17), 5532; https://doi.org/10.3390/en14175532 - 4 Sep 2021
Cited by 19 | Viewed by 4745
Abstract
This paper investigates the degradation mechanism of pressure-sintered silver (s-Ag) film for silicon carbide (SiC) chip assembly with a 2-millimeter-thick copper substrate by means of thermal shock test (TST). Two different types of silver paste, nano-sized silver paste (NP) and nano-micron-sized paste (NMP), [...] Read more.
This paper investigates the degradation mechanism of pressure-sintered silver (s-Ag) film for silicon carbide (SiC) chip assembly with a 2-millimeter-thick copper substrate by means of thermal shock test (TST). Two different types of silver paste, nano-sized silver paste (NP) and nano-micron-sized paste (NMP), were used to sinter the silver film at 300 °C under a pressure of 60 MPa. The mean porosity (p) of the NP and MNP s-Ag films was 2.4% and 8%, respectively. The pore shape of the NP s-Ag was almost spherical, whereas the NMP s-Ag had an irregular shape resembling a peanut shell. After performing the TST at temperatures ranging from −40 to 150 °C, the scanning acoustic tomography (SAT) results suggested that delamination occurs from the edge of the assembly, and the delamination of the NMP s-Ag assembly was faster than that of the NM s-Ag assembly. The NMP s-Ag assembly showed a random delamination, indicating that the delamination speed varies from place to place. The difference in fracture mechanism is discussed based on cross-sectional scanning electron microscope (SEM) observation results after TST and plastic strain distribution results estimated by finite element analysis (FEA) considering pore configuration. Full article
(This article belongs to the Special Issue Thermal Management of Power Electronic Devices, Circuits, and Systems: Innovative Solutions for the WBG Era)
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17 pages, 34499 KiB  
Article
Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics
by Ciro Scognamillo, Antonio Pio Catalano, Michele Riccio, Vincenzo d’Alessandro, Lorenzo Codecasa, Alessandro Borghese, Ravi Nath Tripathi, Alberto Castellazzi, Giovanni Breglio and Andrea Irace
Energies 2021, 14(15), 4683; https://doi.org/10.3390/en14154683 - 2 Aug 2021
Cited by 25 | Viewed by 4510
Abstract
In this paper, an advanced electrothermal simulation strategy is applied to a 3.3 kV silicon carbide MOSFET power module. The approach is based on a full circuital representation of the module, where use is made of the thermal equivalent of the Ohm’s law. [...] Read more.
In this paper, an advanced electrothermal simulation strategy is applied to a 3.3 kV silicon carbide MOSFET power module. The approach is based on a full circuital representation of the module, where use is made of the thermal equivalent of the Ohm’s law. The individual transistors are described with subcircuits, while the dynamic power-temperature feedback is accounted for through an equivalent thermal network enriched with controlled sources enabling nonlinear thermal effects. A synchronous step-up DC-DC converter and a single-phase inverter, both incorporating the aforementioned power module, are simulated. Good accuracy was ensured by considering electromagnetic effects due to parasitics, which were experimentally extracted in a preliminary stage. Low CPU times are needed, and no convergence issues are encountered in spite of the high switching frequencies. The impact of some key parameters is effortlessly quantified. The analysis witnesses the efficiency and versatility of the approach, and suggests its adoption for design, analysis, and synthesis of high-frequency power converters in wide-band-gap semiconductor technology. Full article
(This article belongs to the Special Issue Thermal Management of Power Electronic Devices, Circuits, and Systems: Innovative Solutions for the WBG Era)
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14 pages, 909 KiB  
Article
Thermodynamic Analysis of the Dryout Limit of Oscillating Heat Pipes
by Florian Schwarz, Vladimir Danov, Alexander Lodermeyer, Alexander Hensler and Stefan Becker
Energies 2020, 13(23), 6346; https://doi.org/10.3390/en13236346 - 1 Dec 2020
Cited by 10 | Viewed by 2917
Abstract
The operating limits of oscillating heat pipes (OHP) are crucial for the optimal design of cooling systems. In particular, the dryout limit is a key factor in optimizing the functionality of an OHP. As shown in previous studies, experimental approaches to determine the [...] Read more.
The operating limits of oscillating heat pipes (OHP) are crucial for the optimal design of cooling systems. In particular, the dryout limit is a key factor in optimizing the functionality of an OHP. As shown in previous studies, experimental approaches to determine the dryout limit lead to contradictory results. This work proposes a compact theory to predict a dryout threshold that unifies the experimental and analytical data. The theory is based on the influence of vapor quality on the flow pattern. When the vapor quality exceeds a certain limit (x = 0.006), the flow pattern changes from slug flow to annular flow and the heat transfer decreases abruptly. The results indicate a uniform threshold value, which has been validated experimentally and by the literature. With that approach, it becomes possible to design an OHP with an optimized filling ratio and, hence, substantially improve its cooling abilities. Full article
(This article belongs to the Special Issue Thermal Management of Power Electronic Devices, Circuits, and Systems: Innovative Solutions for the WBG Era)
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