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Functional Materials for Memristors, Metal-Insulator-Metal (MIM) Tunneling Diodes and Field Effect Transistors (FET)

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: 20 December 2025 | Viewed by 4198

Special Issue Editor


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Guest Editor
Mechanical and Mechatronics Engineering Department, University of Waterloo, Waterloo, ON N2L 3G1, Canada
Interests: terahertz quantum tunneling metal-insulator-metal (MIM) diodes for quantum electronics; memristors; opto-nano- and micro-electro-mechanical systems (O-N/MEMS); photo-electro-chemical systems; nano-biosensors
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Special Issue Information

Dear Colleagues,

This Special Issue focuses on the functionalization, via emerging materials, fabrication, and testing of THz tunnelling MIM diodes, memristors, and FETs. Applications ranging from telecommunication, to sensing and 3D imaging (such as that using neuromorphic chips), to non-volatile information storage and processing are also highlighted.

Recently, memristors made from 2D materials have gained enormous attention. These materials offer advantages such as a low switching voltage, reduced power consumption due to an ultrathin body, and an absence of dangling bonds that can cause scalability issues with ultrathin oxides. The choice of insulating material is crucial for MIM tunneling diodes and FETs. Recently, 2D insulating and semiconducting materials, respectively, have been used for designing and simulating MIM tunneling diodes and FETs. Thus, functional materials play a crucial role in the performance and behavior of these electronic components, impacting their applications and scalability.

Prof. Dr. Mustafa Yavuz
Guest Editor

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Keywords

  • tunneling MIM diodes
  • memristors
  • FET
  • emerging materials
  • neuromorphic chips
  • volatile memory and information processing
  • 3D imaging via neuromorphic chips

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Published Papers (1 paper)

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Research

13 pages, 1122 KiB  
Article
Rapid, Selective, and Ultra-Sensitive Field Effect Transistor-Based Detection of Escherichia coli
by Liena Zaidan, Inna Novodchuk, Alexander H.Xu, Alexandru Nica, Saeed Takaloo, Christopher Lloyd, Reza Karimi, Joe Sanderson, Michal Bajcsy and Mustafa Yavuz
Materials 2024, 17(15), 3648; https://doi.org/10.3390/ma17153648 - 24 Jul 2024
Viewed by 2395
Abstract
Escherichia coli (E. coli) was among the first organisms to have its complete genome published (Genome Sequence of E. coli 1997 Science). It is used as a model system in microbiology research. E. coli can cause life-threatening illnesses, particularly in children [...] Read more.
Escherichia coli (E. coli) was among the first organisms to have its complete genome published (Genome Sequence of E. coli 1997 Science). It is used as a model system in microbiology research. E. coli can cause life-threatening illnesses, particularly in children and the elderly. Possible contamination by the bacteria also results in product recalls, which, alongside the potential danger posed to individuals, can have significant financial consequences. We report the detection of live Escherichia coli (E. coli) in liquid samples using a biosensor based on a field-effect transistor (FET) biosensor with B/N co-coped reduced graphene oxide (rGO) gel (BN-rGO) as the transducer material. The FET was functionalized with antibodies to detect E. coli K12 O-antigens in phosphate-buffered saline (PBS). The biosensor detected the presence of planktonic E. coli bacterial cells within a mere 2 min. The biosensor exhibited a limit of detection (LOD) of 10 cells per sample, which can be extrapolated to a limit of detection at the level of a single cell per sample and a detection range of at least 10–108 CFU/mL. The selectivity of the biosensor for E. coli was demonstrated using Bacillus thuringiensis (B. thuringiensis) as a sample contaminant. We also present a comparison of our functionalized BN-rGO FET biosensor with established detection methods of E. coli k12 bacteria, as well as with state-of-the-art detection mechanisms. Full article
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