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Opto/Electronics Materials and Devices Applied for Telecommunications
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Opto/Electronics Materials and Devices Applied for Telecommunications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Optical and Photonic Materials".

Deadline for manuscript submissions: closed (31 July 2024) | Viewed by 4904

Special Issue Editor

Prof. Dr. Yeong-Her Wang

E-Mail Website
Guest Editor
Institute of Microelectronics, National Cheng Kung University, Tainan 70101, Taiwan
Interests: semiconductor devices and physics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Based on the three major challenges outlined by the international semiconductor technology blueprint (ITRS) for the development of the semiconductor industry in the future, compound semiconductors are extremely suitable for use in high-efficiency power electronics in emerging communications standards beyond 5G/6G. The operation frequency of the telecommunication system is increasing and may be up to sub-THz/THz. Compound semiconductors, e.g., GaN and InP-based materials and devices, may have a key role in high-frequency, high-power, and high-temperature applications suitable for B5G/6G and satellite communication. There are, however, a lot of issues that need to be solved, such as those regarding materials, reliability, and device performance. Emerging materials and devices are upcoming ways in which applications could be enhanced.

This Special Issue will focus on materials and devices that can be used for B5G/6G system applications. The scope will cover, but will not be limited to, semiconductor material preparations (e.g., strain engineering, low defectivity and low cost), high-speed devices, power devices, lasers, photodetectors, modeling, simulation, and reliability.

It is my pleasure to invite you to submit papers to this Special Issue. Full papers, communications, and reviews are welcome.

Prof. Dr. Yeong-Her Wang
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • B5G/6G
  • III-V compounds
  • microwave device
  • power device
  • photonic device
  • materials growth

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Published Papers (2 papers)

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Research

15 pages, 5714 KiB  
Article
Guard Ring Design to Prevent Edge Breakdown in Double-Diffused Planar InGaAs/InP Avalanche Photodiodes
by Yu-Chun Chen, Ruei-Hong Yan, Hsu-Chia Huang, Liang-Hsuan Nieh and Hao-Hsiung Lin
Materials 2023, 16(4), 1667; https://doi.org/10.3390/ma16041667 - 16 Feb 2023
Viewed by 2494
Abstract
We report on the design of an attached guard ring (AGR) and a floating guard ring (FGR) in a planar separate absorption, grading, charge, and multiplication In0.53Ga0.47As/InP avalanche photodiode to prevent premature edge breakdowns. The depths of the two [...] Read more.
We report on the design of an attached guard ring (AGR) and a floating guard ring (FGR) in a planar separate absorption, grading, charge, and multiplication In0.53Ga0.47As/InP avalanche photodiode to prevent premature edge breakdowns. The depths of the two Zn diffusions were utilized to manipulate the guard ring structures. Results from TCAD simulation indicate that the optimal AGR diffusion depth is right at the turning point where the breakdown current shifts from the edge of active region to the AGR region. The devices with optimal AGR depth contain significantly higher breakdown voltages than those of devices either with shallower—or without any— AGR. For the FGR design, a series of devices with different spacings between AGR and FGR and different FGR opening widths for diffusion were fabricated and characterized. We show that when the spacing is longer than the critical value, the breakdown voltage can increase ~1.5 V higher than those of the APD devices without FGR. In addition, the wider the FGR opening width, the higher the breakdown voltage. TCAD simulations were also performed to study the effect of FGR, but showed less pronounced improvements, which could be due the discrepancy between the calculated and experimental diffusion profile. Full article
(This article belongs to the Special Issue Opto/Electronics Materials and Devices Applied for Telecommunications)
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10 pages, 2573 KiB  
Article
GaN Vertical Transistors with Staircase Channels for High-Voltage Applications
by Kuntal Barman, Dai-Jie Lin, Rohit Gupta, Chih-Kang Chang and Jian-Jang Huang
Materials 2023, 16(2), 582; https://doi.org/10.3390/ma16020582 - 6 Jan 2023
Viewed by 1626
Abstract
In this study, we propose and simulate the design of a non-regrowth staircase channel GaN vertical trench transistor, demonstrating an exceptional threshold and breakdown characteristic for high power and high frequency applications. The unique staircase design provides a variable capacitance through the gate-dielectric-semiconductor [...] Read more.
In this study, we propose and simulate the design of a non-regrowth staircase channel GaN vertical trench transistor, demonstrating an exceptional threshold and breakdown characteristic for high power and high frequency applications. The unique staircase design provides a variable capacitance through the gate-dielectric-semiconductor interface, which results in a high breakdown voltage of 1.52 kV and maintains a channel on-resistance of 2.61 mΩ∙cm2. Because of the variable length and doping profile in the channel region, this model offers greater flexibility to meet a wide range of device application requirements. Full article
(This article belongs to the Special Issue Opto/Electronics Materials and Devices Applied for Telecommunications)
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