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Electronic, Optical and Magnetic Properties of Low-Dimensional Materials
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Electronic, Optical and Magnetic Properties of Low-Dimensional Materials

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".

Deadline for manuscript submissions: closed (10 September 2024) | Viewed by 6652

Special Issue Editors

Dr. Chao-Yao Yang

E-Mail Website
Guest Editor
Dept. Material Science and Engineering, National Yang Ming Chiao Tung University, Taipei City 112304, Taiwan
Interests: spintronics; topological insulator; two-dimensional materials; valleytronics; magnetics; antiferromagnet; X-ray spectroscopy
Dr. Sidong Lei

E-Mail Website
Guest Editor
Dept. Physics and Astronomy, Georgia State University, Atlanta, GA 30302, USA
Interests: 2D materials; interfacial physics and chemistry; quantum heterostructures; functional low-dimensional systems

Special Issue Information

Dear Colleagues,

Two-dimensional physics has attracted wide scientific interest because of the structural conifnement leading to peculiar properties on many aspects such as transport, magnetism, optics, and valleytronics. Benefitted by the breakthroughs with regards to material processing and structural engineering, an increasing number of materials and their combinations have sparked new ideas on how to expand the scope of exploring more physics in low dimensionality and open new horizons in this research area. This Special Issue aims to improve understanding around two-dimensional materials with several perspectives covering physical properties, processing and engineering, and the ways of characterization. Metallic to insulative phase transition in two-dimensional materials is electrically critical and enables the tuning of conducitivity for transport. The phase transition, along with the changes in electronic structure, can be resolved by using spectroscopy, so the associated optical properties will be concerned. The magnetism of two-dimensional materials, especially in the form of heterostructure, may be more non-trivial, which promotes the potential spintronic applicaions. Furthermore, the valleytronic properties, as a result of the combined inversion symmetry breaking and strong spin-orbital coupling, are considered a contender for memory technology beyond Moore's Law. All the physical properties are correlated with the crystallographic growth and the microstructural engineering. Therefore, a new strategy of fabricating two-dimensional materials should accelerate exploration into novel physical properties and applications. Finally, newly developed characterization is required to bridge materials and properties. This Special Issue will also report and review the current development in the characterization.

Dr. Chao-Yao Yang
Dr. Sidong Lei
Guest Editors

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Keywords

  • two-dimensional physics
  • phase transition
  • transport
  • magnetism
  • optics
  • valleytronics
  • spintronics
  • crystallog-raphy
  • microstructure

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Published Papers (5 papers)

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Research

13 pages, 946 KiB  
Article
Supercurrent and Superconducting Diode Effect in Parallel Double Quantum Dots with Rashba Spin–Orbit Interaction
by Feng Chi, Yaohong Shen, Yumei Gao, Jia Liu, Zhenguo Fu, Zichuan Yi and Liming Liu
Materials 2024, 17(18), 4497; https://doi.org/10.3390/ma17184497 - 13 Sep 2024
Viewed by 220
Abstract
We study theoretically the supercurrent and the superconducting diode effect (SDE) in a structure comprising parallel-coupled double quantum dots (DQDs) sandwiched between two superconductor leads in the presence of a magnetic flux. The influence of the Rashba spin–orbit interaction (RSOI), which induces a [...] Read more.
We study theoretically the supercurrent and the superconducting diode effect (SDE) in a structure comprising parallel-coupled double quantum dots (DQDs) sandwiched between two superconductor leads in the presence of a magnetic flux. The influence of the Rashba spin–orbit interaction (RSOI), which induces a spin-dependent phase factor in the dot–superconductor coupling strength, is taken into account by adopting the nonequilibrium Green’s function technique. This RSOI-induced phase factor serves as a driving force for the supercurrent in addition to the usual superconducting phase difference, and it leads to the system’s left/right asymmetry. Correspondingly, the magnitude of the positive and negative critical currents become different from each other: the so-called SDE. Our results show that the period, magnitude, and direction of the supercurrents depend strongly on the RSOI-induced phase factor, dots’ energy levels, interdot coupling strengths, and the magnetic flux. In the absence of magnetic flux, the diode efficiency is negative and may approach −2, which indicates the perfect diode effect with only negative flowing supercurrent in the absence of a positive one. Interestingly enough, both the sign and magnitude of the diode efficiency can be efficiently adjusted with the help of magnetic flux, the dots’ energy levels and the interdot coupling strength and thus provide a controllable SDE by rich means, such as gate voltage or host materials of the system. Full article
(This article belongs to the Special Issue Electronic, Optical and Magnetic Properties of Low-Dimensional Materials)
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9 pages, 1253 KiB  
Article
TaF4: A Novel Two-Dimensional Antiferromagnetic Material with a High Néel Temperature Investigated Using First-Principles Calculations
by Jia Luo, Qingkai Zhang, Jindong Lin, Yuxiang Ni, Hongyan Wang, Yongliang Tang and Mu Lan
Materials 2024, 17(11), 2780; https://doi.org/10.3390/ma17112780 - 6 Jun 2024
Viewed by 778
Abstract
The structural, electronic, and magnetic properties of a novel two-dimensional monolayer material, TaF4, are investigated using first-principles calculations. The dynamical and thermal stabilities of two-dimensional monolayer TaF4 were confirmed using its phonon dispersion spectrum and molecular dynamics calculations. The band [...] Read more.
The structural, electronic, and magnetic properties of a novel two-dimensional monolayer material, TaF4, are investigated using first-principles calculations. The dynamical and thermal stabilities of two-dimensional monolayer TaF4 were confirmed using its phonon dispersion spectrum and molecular dynamics calculations. The band structure obtained via the high-accuracy HSE06 (Heyd–Scuseria–Ernzerhof 2006) functional theory revealed that monolayer two-dimensional TaF4 is an indirect bandgap semiconductor with a bandgap width of 2.58 eV. By extracting the exchange interaction intensities and magnetocrystalline anisotropy energy in a J1-J2-J3-K Heisenberg model, it was found that two-dimensional monolayer TaF4 possesses a Néel-type antiferromagnetic ground state and has a relatively high Néel temperature (208 K) and strong magnetocrystalline anisotropy energy (2.06 meV). These results are verified via the magnon spectrum. Full article
(This article belongs to the Special Issue Electronic, Optical and Magnetic Properties of Low-Dimensional Materials)
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12 pages, 2245 KiB  
Article
Reduction-Induced Magnetic Behavior in LaFeO3−δ Thin Films
by Nathan D. Arndt, Eitan Hershkovitz, Labdhi Shah, Kristoffer Kjærnes, Chao-Yao Yang, Purnima P. Balakrishnan, Mohammed S. Shariff, Shaun Tauro, Daniel B. Gopman, Brian J. Kirby, Alexander J. Grutter, Thomas Tybell, Honggyu Kim and Ryan F. Need
Materials 2024, 17(5), 1188; https://doi.org/10.3390/ma17051188 - 4 Mar 2024
Viewed by 1417
Abstract
The effect of oxygen reduction on the magnetic properties of LaFeO3−δ (LFO) thin films was studied to better understand the viability of LFO as a candidate for magnetoionic memory. Differences in the amount of oxygen lost by LFO and its magnetic behavior [...] Read more.
The effect of oxygen reduction on the magnetic properties of LaFeO3−δ (LFO) thin films was studied to better understand the viability of LFO as a candidate for magnetoionic memory. Differences in the amount of oxygen lost by LFO and its magnetic behavior were observed in nominally identical LFO films grown on substrates prepared using different common methods. In an LFO film grown on as-received SrTiO3 (STO) substrate, the original perovskite film structure was preserved following reduction, and remnant magnetization was only seen at low temperatures. In a LFO film grown on annealed STO, the LFO lost significantly more oxygen and the microstructure decomposed into La- and Fe-rich regions with remnant magnetization that persisted up to room temperature. These results demonstrate an ability to access multiple, distinct magnetic states via oxygen reduction in the same starting material and suggest LFO may be a suitable materials platform for nonvolatile multistate memory. Full article
(This article belongs to the Special Issue Electronic, Optical and Magnetic Properties of Low-Dimensional Materials)
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12 pages, 3246 KiB  
Article
Paramagnetism in Microwave-Synthesized Metal-Free Nitrogen-Doped Graphene Quantum Dots
by Flavia P. N. Inbanathan, Katherine Leslee A. Cimatu, David C. Ingram, Uriel Joseph Erasquin, Kiran Dasari, Muhammad Shehzad Sultan, Muhammad Sajjad, Vladimir Makarov, Brad R. Weiner, Gerardo Morell, Payman Sharifi Abdar and Wojciech M. Jadwisienczak
Materials 2023, 16(9), 3410; https://doi.org/10.3390/ma16093410 - 27 Apr 2023
Cited by 2 | Viewed by 2240
Abstract
Nitrogen-doped graphene quantum dots (NGQDs) have gained significant attention due to their various physical and chemical properties; however, there is a gap in the study of NGQDs’ magnetic properties. This work adds to the efforts of bridging the gap by demonstrating the room [...] Read more.
Nitrogen-doped graphene quantum dots (NGQDs) have gained significant attention due to their various physical and chemical properties; however, there is a gap in the study of NGQDs’ magnetic properties. This work adds to the efforts of bridging the gap by demonstrating the room temperature paramagnetism in GQDs doped with Nitrogen up to 3.26 at.%. The focus of this experimental work was to confirm the paramagnetic behavior of metal free NGQDs resulting from the pyridinic N configuration in the GQDs host. Metal-free nitrogen-doped NGQDs were synthesized using glucose and liquid ammonia as precursors by microwave-assisted synthesis. This was followed by dialysis filtration. The morphology, optical, and magnetic properties of the synthesized NGQDs were characterized carefully through atomic force microscopy (AFM), transmission electron microscopy (TEM)), UV-VIS spectroscopy, fluorescence, X-ray photon spectroscopy (XPS), and vibrating sample magnetometer (VSM). The high-resolution TEM analysis of NGQDs showed that the NGQDs have a hexagonal crystalline structure with a lattice fringe of ~0.24 nm of (1120) graphene plane. The N1s peak using XPS was assigned to pyridinic, pyrrolic, graphitic, and oxygenated NGQDs. The magnetic study showed the room-temperature paramagnetic behavior of NGQDs with pyridinic N configuration, which was found to have a magnetization of 20.8 emu/g. Full article
(This article belongs to the Special Issue Electronic, Optical and Magnetic Properties of Low-Dimensional Materials)
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Graphical abstract

14 pages, 6099 KiB  
Article
Characterization of the Nano-Rod Arrays of Pyrite Thin Films Prepared by Aqueous Chemical Growth and a Subsequent Sulfurization
by Mohammad Talaeizadeh, Seyyed Ali Seyyed Ebrahimi, Payam Khosravi and Bejan Hamawandi
Materials 2022, 15(19), 6946; https://doi.org/10.3390/ma15196946 - 6 Oct 2022
Cited by 1 | Viewed by 1333
Abstract
Pyrite is an earth-abundant and low-cost material with a specific collection of properties including a low band gap and high absorption coefficient of solar light. These properties make pyrite a good choice in a wide variety of applications such as catalysts, batteries, and [...] Read more.
Pyrite is an earth-abundant and low-cost material with a specific collection of properties including a low band gap and high absorption coefficient of solar light. These properties make pyrite a good choice in a wide variety of applications such as catalysts, batteries, and photovoltaic devices. A thin film composed of vertically aligned pyrite nano-rods was processed via a hydration-condensation method followed by subsequent aging and sulfurization. In this process, no ionic salt was used which resulted in a lower cost process with a lower level of impurities. Field emission scanning electron microscopy, X-ray diffraction, and Raman spectroscopy analyses were used to characterize the thin films in different steps of the process. The major impurity of the final thin films was the marcasite phase according to the Raman analysis which could be minimized by lowering sulfurizing time to about 60 min. In addition, after structural, electrical, and optical characterization of thin films, these layers’ performances in a photovoltaic device were also examined. After deposition of a thin aluminum layer, Schottky-type solar cells of pyrite formed which were then illuminated to measure their current-voltage characteristics. The results show that a combination of low-cost materials and a low-cost preparation method is applicable for building future solar cells. Full article
(This article belongs to the Special Issue Electronic, Optical and Magnetic Properties of Low-Dimensional Materials)
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