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A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Optical and Photonic Materials".

Deadline for manuscript submissions: closed (10 January 2024) | Viewed by 10731

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Dr. Dina V. Deyneko

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Faculty of Chemistry, Lomonosov Moscow State University, 119991 Moscow, Russia
Interests: inorganic materials; LED; tricalcium phosphate; luminescence; vanadates
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Dear Colleagues,

Light-emitting materials open up a range of infinite possibilities for illumination, visualization and sensing technology, etc. LEDs are used in solid-state lighting, and the current global trend is personalized lighting. The management of the luminescent material spectra can be used for indoor lighting, horticulture and industrial and medical applications. The trends of recent years have shown the particular importance of purification with UV-C light to prevent the spread of different viruses. Today, people demand more from technology each and every day, so the development of this Special Issue entitled Advanced Materials for Optical and Luminescence Applications is of great importance.

It is important to create new materials for the LED industry with improved properties, such as high efficiency, stability, including operation and thermal stability, environment-friendly, low synthesis cost, etc. Of particular importance is the production and complex characterization of candidates for such advanced materials.

The topics covered in this Special Issue include light-emitting materials for different areas of LED technologies, such as inorganic and organic hosts, activated with rare-earth and transition elements or self-emitting compounds, and the study of their properties, demonstrating the properties in demand.

Dr. Dina V. Deyneko
Guest Editor

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Keywords

luminescence
photoluminescence
up-conversion
NIR luminescence
WLED
rare-earth elements
transition metal
OLED
bioimaging
crystal structure

Published Papers (7 papers)

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Research

13 pages, 7106 KiB

Open AccessArticle

A Photoluminescence Study of Eu³⁺, Tb³⁺, Ce³⁺ Emission in Doped Crystals of Strontium-Barium Fluoride Borate Solid Solution Ba_4−xSr_3+x(BO₃)_4−yF_2+3y (BSBF)

by Tatyana B. Bekker, Alexey A. Ryadun, Sergey V. Rashchenko, Alexey V. Davydov, Elena B. Baykalova and Vladimir P. Solntsev

Materials 2023, 16(15), 5344; https://doi.org/10.3390/ma16155344 - 29 Jul 2023

Viewed by 978

Abstract

The present study is aimed at unveiling the luminescence potential of Ba_4−xSr_3+x(BO₃)_4−yF_2+3y (BSBF) crystals doped with Eu³⁺, Tb³⁺, and Ce³⁺. Owing to the incongruent [...] Read more.

The present study is aimed at unveiling the luminescence potential of Ba_4−xSr_3+x(BO₃)_4−yF_2+3y (BSBF) crystals doped with Eu³⁺, Tb³⁺, and Ce³⁺. Owing to the incongruent melting character of the phase, the NaF compound was used as a solvent for BSBF crystal growth. The structure of BSBF: Eu³⁺ with Eu₂O₃ concentration of about 0.7(3) wt% was solved in the non-centrosymmetric point group P6₃mc. The presence of Eu₂O₃ in BSBF: Eu³⁺ leads to a shift of the absorption edge from 225 nm to 320 nm. The photoluminescence properties of the BSBF: Ce³⁺, BSBF: Tb³⁺, BSBF: Eu³⁺, and BSBF: Eu³⁺, Tb³⁺, Ce³⁺ crystals have been studied. The unusual feature of europium emission in BSBF is the intensively manifested ⁵D₀→⁷F₀ transition at about 574 nm, which is the strongest for BSBF: Eu³⁺ at 370 nm excitation and for BSBF: Eu³⁺, Tb³⁺, Ce³⁺ at 300 nm and 370 nm excitations. No evidence of Tb³⁺→Eu³⁺ energy transfer was found for BSBF: Eu³⁺, Tb³⁺, Ce³⁺. The PL spectra of BSBF: Eu³⁺ at 77 and 300 K are similar with CIE chromaticity coordinates of (0.617; 0.378) at 300 nm excitation and (0.634; 0.359) at 395 nm excitation and low correlated color temperature which implies application prospects in the field of lightning. Due to the high intensity of ⁵D₀→⁷F₀ Eu³⁺ transition at 370 nm excitation, the BSBF: Eu³⁺ emission is yellow-shifted. Full article

(This article belongs to the Special Issue Advanced Materials for Optical and Luminescence Applications)

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30 pages, 6866 KiB

Open AccessArticle

Structure, Optical Properties and Physicochemical Features of LiNbO₃:Mg,B Crystals Grown in a Single Technological Cycle: An Optical Material for Converting Laser Radiation

by Mikhail Palatnikov, Olga Makarova, Alexandra Kadetova, Nikolay Sidorov, Natalya Teplyakova, Irina Biryukova and Olga Tokko

Materials 2023, 16(13), 4541; https://doi.org/10.3390/ma16134541 - 23 Jun 2023

Cited by 3 | Viewed by 1262

Abstract

Two series of LiNbO₃:Mg:B crystals have been grown and studied. Two doping methods—have been used. The crystals—have been co-doped with Mg and a non-metallic dopant, B. The physicochemical features of the growth—have been considered for LiNbO₃:Mg:B crystals obtained from a boron-doped melt. The charge—has been prepared using different technologies: homogeneous (HG) and solid-phase (SP) doping. The same two methods have been used to grow single-doped LiNbO₃:Mg crystals. A control near-stoichiometric (NSLN) crystal—has been grown via the HTTSSG (high-temperature top-seeded solution growth) method from a congruent melt (Li/Nb ≈ 0.946) with 5.5 wt% K₂O. The characteristics of the LiNbO₃:Mg:B crystals—have been compared with those of the LiNbO₃:Mg and NSLN crystals. Physicochemical and structural reasons have been established for the differences in the distribution coefficients of magnesium (K_D) during the growth of the HG- and SP-doped LiNbO₃:B:Mg and LiNbO₃:Mg crystals. The optical characteristics of the LiNbO₃:B:Mg crystals—have been studied via optical spectroscopy, laser conoscopy and photoinduced light scattering (PILS). The influence of boron on the microstructure, compositional and optical uniformities and optical damage resistance of the LiNbO₃:Mg:B crystals—has been estimated. Optimal technological approaches to growing optically uniform LiNbO₃:B:Mg crystals have been determined. LiNbO₃:Mg:B crystals have been shown to have a significant advantage over the commercially used LiNbO₃:Mg crystals since large LiNbO₃:Mg:B crystals can be grown without stripes. Such stripes usually appear perpendicular to the growth axis. In addition, the photorefractive effect is suppressed in LiNbO₃:Mg:B crystals at lower magnesium concentrations ([Mg] ≈ 2.5 mol%) than in LiNbO₃:Mg ([Mg] ≈ 5.5 mol%). Full article

(This article belongs to the Special Issue Advanced Materials for Optical and Luminescence Applications)

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11 pages, 2199 KiB

Open AccessArticle

Mn²⁺ Luminescence in Ca₉Zn_1–xMn_xNa(PO₄)₇ Solid Solution, 0 ≤ x ≤ 1

by Eldar M. Gallyamov, Vladimir V. Titkov, Vladimir N. Lebedev, Sergey Y. Stefanovich, Bogdan I. Lazoryak and Dina V. Deyneko

Materials 2023, 16(12), 4392; https://doi.org/10.3390/ma16124392 - 14 Jun 2023

Viewed by 1034

Abstract

The solid solution Ca₉Zn_1–xMn_xNa(PO₄)₇ (0 ≤ x ≤ 1.0) was obtained by solid-phase reactions under the control of a reducing atmosphere. It was demonstrated that Mn²⁺-doped phosphors can be obtained using activated carbon in a closed chamber, which is a simple and robust method. The crystal structure of Ca₉Zn_1–xMn_xNa(PO₄)₇ corresponds to the non-centrosymmetric β-Ca₃(PO₄)₂ type (space group R3c), as confirmed by powder X-ray diffraction (PXRD) and optical second-harmonic generation methods. The luminescence spectra in visible area consist of a broad red emission peak centered at 650 nm under 406 nm of excitation. This band is attributed to the ⁴T₁ → ⁶A₁ electron transition of Mn²⁺ ions in the β-Ca₃(PO₄)₂-type host. The absence of transitions corresponding to Mn⁴⁺ ions confirms the success of the reduction synthesis. The intensity of the Mn²⁺ emission band in Ca₉Zn_1–xMn_xNa(PO₄)₇ rising linearly with increasing of x at 0.05 ≤ x ≤ 0.5. However, a negative deviation of the luminescence intensity was observed at x = 0.7. This trend is associated with the beginning of a concentration quenching. At higher x values, the intensity of luminescence continues to increase but at a slower rate. PXRD analysis of the samples with x = 0.2 and x = 0.5 showed that Mn²⁺ and Zn²⁺ ions replace calcium in the M5 (octahedral) sites in the β-Ca₃(PO₄)₂ crystal structure. According to Rietveld refinement, Mn²⁺ and Zn²⁺ ions jointly occupy the M5 site, which remains the only one for all manganese atoms within the range of 0.05 ≤ x ≤ 0.5. The deviation of the mean interatomic distance (∆l) was calculated and the strongest bond length asymmetry, ∆l = 0.393 Å, corresponds to x = 1.0. The large average interatomic distances between Mn²⁺ ions in the neighboring M5 sites are responsible for the lack of concentration quenching of luminescence below x = 0.5. Full article

(This article belongs to the Special Issue Advanced Materials for Optical and Luminescence Applications)

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13 pages, 8165 KiB

Open AccessArticle

Novel Red Phosphor of Gd³⁺, Sm³⁺ co-Activated Ag_xGd_{((2−x)/3)−0.3−y}Sm_yEu³⁺_0.30☐_{(1−2x−2y)/3}WO₄ Scheelites for LED Lighting

by Vladimir A. Morozov, Bogdan I. Lazoryak, Aleksandra A. Savina, Elena G. Khaikina, Ivan I. Leonidov, Alexey V. Ishchenko and Dina V. Deyneko

Materials 2023, 16(12), 4350; https://doi.org/10.3390/ma16124350 - 13 Jun 2023

Viewed by 1335

Abstract

Gd³⁺ and Sm³⁺ co-activation, the effect of cation substitutions and the creation of cation vacancies in the scheelite-type framework are investigated as factors influencing luminescence properties. Ag_xGd_{((2−x)/3)−0.3−y}Sm_yEu³⁺_0.3☐_(1−2x)/3WO₄ (x = 0.50, 0.286, 0.20; y = 0.01, 0.02, 0.03, 0.3) scheelite-type phases (A_xGS_yE) have been synthesized by a solid-state method. A powder X-ray diffraction study of A_xGS_yE (x = 0.286, 0.2; y = 0.01, 0.02, 0.03) shows that the crystal structures have an incommensurately modulated character similar to other cation-deficient scheelite-related phases. Luminescence properties have been evaluated under near-ultraviolet (n–UV) light. The photoluminescence excitation spectra of A_xGS_yE demonstrate the strongest absorption at 395 nm, which matches well with commercially available UV-emitting GaN-based LED chips. Gd³⁺ and Sm³⁺ co-activation leads to a notable decreasing intensity of the charge transfer band in comparison with Gd³⁺ single-doped phases. The main absorption is the ⁷F₀ → ⁵L₆ transition of Eu³⁺ at 395 nm and the ⁶H_5/2 → ⁴F_7/2 transition of Sm³⁺ at 405 nm. The photoluminescence emission spectra of all the samples indicate intense red emission due to the ⁵D₀ → ⁷F₂ transition of Eu³⁺. The intensity of the ⁵D₀ → ⁷F₂ emission increases from ~2 times (x = 0.2, y = 0.01 and x = 0.286, y = 0.02) to ~4 times (x = 0.5, y = 0.01) in the Gd³⁺ and Sm³⁺ co-doped samples. The integral emission intensity of Ag_0.20Gd_0.29Sm_0.01Eu_0.30WO₄ in the red visible spectral range (the ⁵D₀ → ⁷F₂ transition) is higher by ~20% than that of the commercially used red phosphor of Gd₂O₂S:Eu³⁺. A thermal quenching study of the luminescence of the Eu³⁺ emission reveals the influence of the structure of compounds and the Sm³⁺ concentration on the temperature dependence and behavior of the synthesized crystals. Ag_0.286Gd_0.252Sm_0.02Eu_0.30WO₄ and Ag_0.20Gd_0.29Sm_0.01Eu_0.30WO₄, with the incommensurately modulated (3 + 1)D monoclinic structure, are very attractive as near-UV converting phosphors applied as red-emitting phosphors for LEDs. Full article

(This article belongs to the Special Issue Advanced Materials for Optical and Luminescence Applications)

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11 pages, 3992 KiB

Open AccessArticle

Role of Boron in Assisting the Super-Enhancement of Emissions from Carbon-Implanted Silicon

by Nurul Ellena Abdul Razak, Chang Fu Dee, Morgan Madhuku, Ishaq Ahmad, Edward Yi Chang, Hung Wei Yu, Burhanuddin Yeop Majlis and Dilla Duryha Berhanuddin

Materials 2023, 16(5), 2070; https://doi.org/10.3390/ma16052070 - 2 Mar 2023

Viewed by 1743

Abstract

The super enhancement of silicon band edge luminescence when co-implanted with boron and carbon is reported. The role of boron in the band edge emissions in silicon was investigated by deliberately introducing defects into the lattice structures. We aimed to increase the light emission intensity from silicon by boron implantation, leading to the formation of dislocation loops between the lattice structures. The silicon samples were doped with a high concentration of carbon before boron implantation and then annealed at a high temperature to activate the dopants into substitutional lattice sites. Photoluminescence (PL) measurements were performed to observe the emissions at the near-infrared region. The temperatures were varied from 10 K to 100 K to study the effect of temperature on the peak luminescence intensity. Two main peaks could be seen at ~1112 and 1170 nm by observing the PL spectra. The intensities shown by both peaks in the samples incorporated with boron are significantly higher than those in pristine silicon samples, and the highest intensity in the former was 600 times greater than that in the latter. Transmission electron microscopy (TEM) was used to study the structure of post-implant and post-anneal silicon sample. The dislocation loops were observed in the sample. Through a technique compatible with mature silicon processing technology, the results of this study will greatly contribute to the development of all Si-based photonic systems and quantum technologies. Full article

(This article belongs to the Special Issue Advanced Materials for Optical and Luminescence Applications)

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22 pages, 8744 KiB

Open AccessEditor’s ChoiceArticle

Abnormal Eu³⁺ → Eu²⁺ Reduction in Ca_9−xMn_xEu(PO₄)₇ Phosphors: Structure and Luminescent Properties

by Elena V. Sipina, Dmitry A. Spassky, Nataliya R. Krutyak, Vladimir A. Morozov, Evgenia S. Zhukovskaya, Alexei A. Belik, Mikhail S. Manylov, Bogdan I. Lazoryak and Dina V. Deyneko

Materials 2023, 16(4), 1383; https://doi.org/10.3390/ma16041383 - 7 Feb 2023

Cited by 7 | Viewed by 2071

Abstract

β-Ca₃(PO₄)₂-type phosphors Ca_9−xMn_xEu(PO₄)₇ have been synthesized by high-temperature solid-phase reactions. The crystal structure of Ca₈MnEu(PO₄)₇ was characterized by synchrotron X-ray diffraction. The phase transitions, magnetic and photoluminescence (PL) properties were studied. The abnormal reduction Eu³⁺ → Eu²⁺ in air was observed in Ca_9−xMn_xEu(PO₄)₇ according to PL spectra study and confirmed by X-ray photoelectron spectroscopy (XPS). Eu³⁺ shows partial reduction and coexistence of Eu²⁺/³⁺ states. It reflects in combination of a broad band from the Eu²⁺ 4f⁶5d¹ → 4f⁷ transition and a series of sharp lines attributed to ⁵D₀ → ⁷F_J transitions of Eu³⁺. Eu²⁺/Eu³⁺ ions are redistributed among two crystal sites, M1 and M3, while Mn²⁺ fully occupies octahedral site M5 in Ca₈MnEu(PO₄)₇. The main emission band was attributed to the ⁵D₀ → ⁷F₂ electric dipole transition of Eu³⁺ at 395 nm excitation. The abnormal quenching of Eu³⁺ emission was observed in Ca_9−xMn_xEu(PO₄)₇ phosphors with doping of the host by Mn²⁺ ions. The phenomena of abnormal reduction and quenching were discussed in detail. Full article

(This article belongs to the Special Issue Advanced Materials for Optical and Luminescence Applications)

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13 pages, 2466 KiB

Open AccessEditor’s ChoiceArticle

Decay Kinetics of Gd₃Al₂Ga₃O₁₂:Ce³⁺ Luminescence under Dense Laser Irradiation

by Dmitry Spassky, Andrey Vasil’ev, Nataliya Krutyak, Oleg Buzanov, Vladimir Morozov, Alexei Belik, Nikita Fedorov, Patrick Martin and Andrei Belsky

Materials 2023, 16(3), 971; https://doi.org/10.3390/ma16030971 - 20 Jan 2023

Cited by 2 | Viewed by 1462

Abstract

The decay kinetics of Gd₃Al₂Ga₃O₁₂:Ce³⁺ single crystal luminescence were studied under dense laser excitation. It was shown that the decay times as well as the intensity of Ce³⁺ luminescence depend on the excitation density. The observed effects were ascribed to the interaction between excitons as well as to the features of energy transfer from the excitons to Ce³⁺. The numerical simulation of the experimental results was performed for justification of the proposed model. Full article

(This article belongs to the Special Issue Advanced Materials for Optical and Luminescence Applications)

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