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The Future of Interfaces—a Step Further towards a Complete Understanding of Surfaces

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".

Deadline for manuscript submissions: closed (31 March 2022) | Viewed by 4477

Special Issue Editors


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Guest Editor
Karlsruhe Institute of Technology, Campus North, 76344 Eggenstein-Leopoldshafen, Germany
Interests: surface science; surface spectroscopy; thin films, metallic and oxidic surfaces; novel interfaces; interface engineering; nanomaterials

E-Mail Website
Guest Editor
Karlsruhe Institute of Technology, Campus North, 76344 Eggenstein-Leopoldshafen, Germany
Interests: mineral interfaces; cement-bound materials; corrosion; semiconductors; doping; density functional theory

Special Issue Information

Dear Colleagues,

Surfaces and interfaces of many types play a critical role in modern technologies associated with catalysis, electronics, energy conversion and storage, as well as medicine and health.

The goal of modern surface chemistry is to improve the understanding of the mechanisms and reactions at interfaces down to a molecular level. This in-depth understanding can be achieved by either controlling surface properties using surface-engineering techniques or by revealing the secrets of known surfaces with new or innovative analysis techniques.

The field of surface-engineering has rapidly expanded in the last few decades as the demand for enhanced materials has drastically increased. The thirst for materials displaying favorable properties (catalytic activity, optical transparency, toughness, conductivity, etc.) as well as their interactions with their surroundings in a specific manner has driven this expansion. In addition, the constant need for downscaling makes advances in surface-engineering even more important.

Over the past few decades, various surface-science techniques have been developed, and a vast amount of knowledge about surface chemistry has been accumulated. As the features being analyzed constantly decrease in size, the bulk analysis of small objects and surface analysis will be indistinguishable in the future, and any tool that can provide detailed information (compositional or structural) at the smallest spatial scale will be of interest.

The aim of this Special Issue is to present novel and interesting results for a better grasp of interface chemistry. The topics of interest include but are not limited to:

  • Surface materials and surface-engineering;
  • Interfaces and their applications;
  • Spectroscopic insights in surface chemistry.

It is my pleasure to invite you to submit a manuscript for this Special Issue. Full papers, communications, and reviews are all welcome.

Dr. Eric Sauter
Dr. Peter Thissen
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • surface materials
  • interface engineering
  • thin films
  • nanomaterials
  • lithography
  • surface spectroscopy
  • novel interface applications

Published Papers (2 papers)

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Research

9 pages, 2152 KiB  
Article
Interfacial Polarization of Thin Alq3, Gaq3, and Erq3 Films on GaN(0001)
by Miłosz Grodzicki, Jakub Sito, Rafał Lewandków, Piotr Mazur and Antoni Ciszewski
Materials 2022, 15(5), 1671; https://doi.org/10.3390/ma15051671 - 23 Feb 2022
Cited by 3 | Viewed by 1664
Abstract
This report presents results of research on electronic structure of three interfaces composed of organic layers of Alq3, Gaq3, or Erq3 deposited on GaN semiconductor. The formation of the interfaces and their characterization have been performed in situ [...] Read more.
This report presents results of research on electronic structure of three interfaces composed of organic layers of Alq3, Gaq3, or Erq3 deposited on GaN semiconductor. The formation of the interfaces and their characterization have been performed in situ under ultrahigh vacuum conditions. Thin layers have been vapor-deposited onto p-type GaN(0001) surfaces. Ultraviolet photoelectron spectroscopy (UPS) assisted by X-ray photoelectron spectroscopy (XPS) has been employed to construct the band energy diagrams of the substrate and interfaces. The highest occupied molecular orbitals (HOMOs) are found to be at 1.2, 1.7, and 2.2 eV for Alq3, Gaq3, and Erq3 layers, respectively. Alq3 layer does not change the position of the vacuum level of the substrate, in contrast to the other layers, which lower it by 0.8 eV (Gaq3) and 1.3 eV (Erq3). Interface dipoles at the phase boundaries are found to be −0.2, −0.9, −1.2 eV, respectively, for Alq3, Gaq3, Erq3 layers on GaN(0001) surfaces. Full article
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9 pages, 2963 KiB  
Article
Influence of Graphite Layer on Electronic Properties of MgO/6H-SiC(0001) Interface
by Rafał Lewandków, Piotr Mazur, Artur Trembułowicz, Agata Sabik, Radosław Wasielewski and Miłosz Grodzicki
Materials 2021, 14(15), 4189; https://doi.org/10.3390/ma14154189 - 27 Jul 2021
Cited by 7 | Viewed by 2165
Abstract
This paper concerns research on magnesium oxide layers in terms of their potential use as a gate material for SiC MOSFET structures. The two basic systems of MgO/SiC(0001) and MgO/graphite/SiC(0001) were deeply investigated in situ under ultrahigh vacuum (UHV). In both cases, the [...] Read more.
This paper concerns research on magnesium oxide layers in terms of their potential use as a gate material for SiC MOSFET structures. The two basic systems of MgO/SiC(0001) and MgO/graphite/SiC(0001) were deeply investigated in situ under ultrahigh vacuum (UHV). In both cases, the MgO layers were obtained by a reactive evaporation method. Graphite layers terminating the SiC(0001) surface were formed by thermal annealing in UHV. The physicochemical properties of the deposited MgO layers and the systems formed with their participation were determined using X-ray and UV photoelectron spectroscopy (XPS, UPS). The results confirmed the formation of MgO compounds. Energy level diagrams were constructed for both systems. The valence band maximum of MgO layers was embedded deeper on the graphitized surface than on the SiC(0001). Full article
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