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Metals
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Metal Oxides Characterization for Emerging Memory Device Applications
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Metal Oxides Characterization for Emerging Memory Device Applications

A special issue of Metals (ISSN 2075-4701). This special issue belongs to the section "Metallic Functional Materials".

Deadline for manuscript submissions: closed (30 April 2022) | Viewed by 12947

Special Issue Editor

Prof. Dr. Sungjun Kim

E-Mail Website
Guest Editor
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea
Interests: emerging memory; memristor; resistive switching; synaptic devices; neuromorphic; metal oxides
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Emerging memories such as RRAM, PRAM, MRAM, and FRAM are actively being studied for many applications such as high-density storage memory, neuromorphic systems, and logic-in-memory. For new memory applications, various materials such as nanoparticles, organic molecules, inorganic–organic hybrids and composites, ferroelectricity, alloy materials, quantum dots, graphene, and 2D materials have been explored.  Among them, metal oxide and metal nitride show stable memory properties that can be varied by deposition methods such as CVD, PVD, spin-coating, and synthesis. This Special Issue includes conventional new memories such as RRAM, PRAM, and MRAM. Moreover, transistor-type three-terminal memories using light element such as Li, oxides, FTJ (Ferroelectricity tunnel junction), and other magnetic type memory devices are investigated.

Prof. Sungjun Kim
Guest Editor

Manuscript Submission Information

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Keywords

  • Emerging memory
  • Memristor
  • Resistive switching
  • Synaptic devices
  • Neuromorphic system
  • Processing in memory (PIM)
  • Metal oxides
  • Metal nitrides

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Published Papers (5 papers)

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Research

6 pages, 5234 KiB  
Article
Atomic Layer Deposited SiOX-Based Resistive Switching Memory for Multi-Level Cell Storage
by Yewon Lee, Jiwoong Shin, Giyeong Nam, Daewon Chung, Sungjoon Kim, Joonhyeon Jeon and Sungjun Kim
Metals 2022, 12(8), 1370; https://doi.org/10.3390/met12081370 - 18 Aug 2022
Cited by 3 | Viewed by 1969
Abstract
Herein, stable resistive switching characteristics are demonstrated in an atomic-layer-deposited SiOX-based resistive memory device. The thickness and chemical properties of the Pt/SiOX/TaN stack are verified by transmission electron microscopy (TEM) and X-ray photoemission spectroscopy (XPS). It is demonstrated that [...] Read more.
Herein, stable resistive switching characteristics are demonstrated in an atomic-layer-deposited SiOX-based resistive memory device. The thickness and chemical properties of the Pt/SiOX/TaN stack are verified by transmission electron microscopy (TEM) and X-ray photoemission spectroscopy (XPS). It is demonstrated that much better resistive switching is obtained using a negative set and positive reset compared to the opposite polarity. In addition, multi-level switching is demonstrated by changing the compliance current (CC) and the reset stop voltage, and potentiation and depression are emulated by applying pulses to achieve a synaptic device. Finally, a pulse endurance of 10,000 cycles and a retention time of 5000 s are confirmed by modulating the pulse input and reading voltage, respectively. Full article
(This article belongs to the Special Issue Metal Oxides Characterization for Emerging Memory Device Applications)
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8 pages, 1519 KiB  
Article
Conductance Quantization Behavior in Pt/SiN/TaN RRAM Device for Multilevel Cell
by Jongmin Park, Seungwook Lee, Kisong Lee and Sungjun Kim
Metals 2021, 11(12), 1918; https://doi.org/10.3390/met11121918 - 27 Nov 2021
Cited by 7 | Viewed by 2427
Abstract
In this work, we fabricated a Pt/SiN/TaN memristor device and characterized its resistive switching by controlling the compliance current and switching polarity. The chemical and material properties of SiN and TaN were investigated by X-ray photoelectron spectroscopy. Compared with the case of a [...] Read more.
In this work, we fabricated a Pt/SiN/TaN memristor device and characterized its resistive switching by controlling the compliance current and switching polarity. The chemical and material properties of SiN and TaN were investigated by X-ray photoelectron spectroscopy. Compared with the case of a high compliance current (5 mA), the resistive switching was more gradual in the set and reset processes when a low compliance current (1 mA) was applied by DC sweep and pulse train. In particular, low-power resistive switching was demonstrated in the first reset process, and was achieved by employing the negative differential resistance effect. Furthermore, conductance quantization was observed in the reset process upon decreasing the DC sweep speed. These results have the potential for multilevel cell (MLC) operation. Additionally, the conduction mechanism of the memristor device was investigated by I-V fitting. Full article
(This article belongs to the Special Issue Metal Oxides Characterization for Emerging Memory Device Applications)
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7 pages, 1478 KiB  
Article
Demonstration of Threshold Switching and Bipolar Resistive Switching in Ag/SnOx/TiN Memory Device
by Juyeong Pyo, Seung-Jin Woo, Kisong Lee and Sungjun Kim
Metals 2021, 11(10), 1605; https://doi.org/10.3390/met11101605 - 9 Oct 2021
Cited by 6 | Viewed by 2355
Abstract
In this work, we observed the duality of threshold switching and non-volatile memory switching of Ag/SnOx/TiN memory devices by controlling the compliance current (CC) or pulse amplitude. The insulator thickness and chemical analysis of the device stack were confirmed by transmission [...] Read more.
In this work, we observed the duality of threshold switching and non-volatile memory switching of Ag/SnOx/TiN memory devices by controlling the compliance current (CC) or pulse amplitude. The insulator thickness and chemical analysis of the device stack were confirmed by transmission electron microscope (TEM) images of the Ag/SnOx/TiN stack and X-ray photoelectron spectroscopy (XPS) of the SnOx film. The threshold switching was achieved at low CC (50 μA), showing volatile resistive switching. Optimal CC (5 mA) for bipolar resistive switching conditions with a gradual transition was also found. An unstable low-resistance state (LRS) and negative-set behavior were observed at CCs of 1 mA and 30 mA, respectively. We also demonstrated the pulse operation for volatile switching, set, reset processes, and negative-set behaviors by controlling pulse amplitude and polarity. Finally, the potentiation and depression characteristics were mimicked by multiple pulses, and MNIST pattern recognition was calculated using a neural network, including the conductance update for a hardware-based neuromorphic system. Full article
(This article belongs to the Special Issue Metal Oxides Characterization for Emerging Memory Device Applications)
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8 pages, 3659 KiB  
Article
Resistive Switching Characteristics of ZnO-Based RRAM on Silicon Substrate
by Dahye Kim, Jiwoong Shin and Sungjun Kim
Metals 2021, 11(10), 1572; https://doi.org/10.3390/met11101572 - 1 Oct 2021
Cited by 12 | Viewed by 3367
Abstract
In this work, we conducted the following analysis of Ni/ZnO (20 nm)/n-type Si RRAM device with three different compliance currents (CCs). We compared I–V curves, including set, reset voltages, and resistance of LRS, HRS states for each CCs. For an accurate comparison of [...] Read more.
In this work, we conducted the following analysis of Ni/ZnO (20 nm)/n-type Si RRAM device with three different compliance currents (CCs). We compared I–V curves, including set, reset voltages, and resistance of LRS, HRS states for each CCs. For an accurate comparison of each case, statistical analysis is presented. In each case, the average value and the relative standard deviation (RSD) of resistance are calculated to analyze the characteristics of the distribution. The best variability is observed at higher CC (5 mA). In addition, we validated the non-volatile properties of the device using the retention data for each of the CCs. Based on this comparison, we proposed the most appropriate CC of the device operation. Also, a pulse was applied to measure the current waveform and demonstrate the regular operation of the device. Finally, the resistance of LRS and HRS states was measured by pulse. We statistically compared the measured pulse data with the DC data. Full article
(This article belongs to the Special Issue Metal Oxides Characterization for Emerging Memory Device Applications)
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7 pages, 1585 KiB  
Article
Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaOx/ITO Device
by Hojeong Ryu, Beomjun Park and Sungjun Kim
Metals 2021, 11(10), 1531; https://doi.org/10.3390/met11101531 - 26 Sep 2021
Viewed by 2184
Abstract
In this work, we demonstrate the threshold switching and bipolar resistive switching with non-volatile property of TiN/TaOx/indium tin oxide (ITO) memristor device. The intrinsic switching of TaOx is preferred when a positive bias is applied to the TiN electrode in [...] Read more.
In this work, we demonstrate the threshold switching and bipolar resistive switching with non-volatile property of TiN/TaOx/indium tin oxide (ITO) memristor device. The intrinsic switching of TaOx is preferred when a positive bias is applied to the TiN electrode in which the threshold switching with volatile property is observed. On the other hand, indium diffusion could cause resistive switching by formation and rupture of metallic conducting filament when a positive bias and a negative bias are applied to the ITO electrode for set and reset processes. The bipolar resistive switching occurs both with the compliance current and without the compliance current. The conduction mechanism of low-resistance state (LRS) and high-resistance state (HRS) are dominated by Ohmic conduction and Schottky emission, respectively. Finally, threshold switching and bipolar resistive switching are verified by pulse operation. Full article
(This article belongs to the Special Issue Metal Oxides Characterization for Emerging Memory Device Applications)
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