Wide and Ultrawide Bandgap Semiconductors: Materials, Devices, and Applications
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D：Materials and Processing".
Deadline for manuscript submissions: 31 May 2026 | Viewed by 33
Special Issue Editors
2. The Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
Interests: semiconductor device physics; multimodal sensors; sensing systems and integrated circuits; flexible sensing devices and systems
Special Issues, Collections and Topics in MDPI journals
2. The Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
Interests: piezo-phototronics; pyro-phototronics; nanogenerators; tribotronics; contact electrification
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Semiconductors with wide or ultrawide bandgap own unique properties, including but not limited to the following: high breakdown voltage, strong critical electric field, high electron mobility, resistance to high temperature and chemicals. Some wide or ultrawide bandgap semiconductors also possess other special characteristics, for instance, piezoelectricity, flexoelectricity, ferroelectricity, and so on. Because of these tremendous excellent properties and their potential applications, wide and ultrawide bandgap semiconductors, for example, ZnO, SiC, Ga2O3, and AlN, have attracted lots of attention in recent years. However, since most of them are compound semiconductors, their growth and quality control still face many challenges that remain to be resolved. More importantly, the functional devices based on wide and ultrawide bandgap semiconductors still need to be explored further. In addition, the underlying working mechanism and device physics are also not clear and need more theoretical and numerical demonstrations. Finally, potential applications based on wide and ultrawide bandgap semiconductor devices are required to be demonstrated. Accordingly, this Special Issue titled “Wide and Ultrawide Bandgap Semiconductors: Materials, Devices, and Applications” seeks to showcase research papers and review articles that focus on (1) the fundamentals of growth, characterization, quality control of wide and ultrawide bandgap semiconductor materials; (2) the investigations of functional devices based on wide and ultrawide bandgap semiconductors, including but not limited to power semiconductor devices and sensors; (3) the potential applications of functional devices based on wide and ultrawide bandgap semiconductors. In addition, studies and reviews focusing on the coupling between wide/ultrawide bandgap semiconductors and other materials (e.g., Si, perovskite, 2D materials, MXene, etc.) are also welcome.
Dr. Fangpei Li
Dr. Wenbo Peng
Guest Editors
Manuscript Submission Information
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Keywords
- wide/ultrawide bandgap
- power semiconductor device
- Schottky barrier diode
- VDMOSFET
- physical sensors
- chemical sensors
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