- Article
Investigation of Electron Transport Layer Influence on Asymmetric Bipolar Switching in Transparent BST-Based RRAM Devices
- Kai-Huang Chen,
- Ming-Cheng Kao,
- Hsin-Chin Chen,
- Yao-Chin Wang,
- Chien-Min Cheng and
- Wei-Min Xu
Ba0.6Sr0.4TiO3 (BST) thin films were deposited on ITO substrates via rf magnetron sputtering, followed by structural and morphological characterization using XRD and FE-SEM. Metal–insulator–metal (MIM) RRAM devices were fabricated by depo...

