Latest Advancements in Semiconductor Materials, Devices, and Systems, 2nd Edition

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: 31 August 2025 | Viewed by 722

Special Issue Editors


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Guest Editor
The Commonwealth Scientific and Industrial Research Organisation (CSIRO), Building 101, Clunies Ross Street, Black Mountain, ACT 2601, Australia
Interests: semiconductor devices; quantum computing; nanofabrication; machine learning
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Guest Editor
1. School of Materials Science, The City University of Hong Kong, Road to Kowloon, Hong Kong 999077, China
2. School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, Australia
Interests: 2D materials; nanotechnology; semiconductor devices
Special Issues, Collections and Topics in MDPI journals

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Guest Editor Assistant
Neuroscience Research Australia, Sydney, NSW 2031, Australia
Interests: brain electrical property; MRI-based electrical property analysis; imaging signal processing

Special Issue Information

Dear Colleagues,

The domain of semiconductors is experiencing a paradigm shift as the boundaries of Moore’s Law are being approached. While the exploration of next-generation semiconductors, such as 2D materials and wide bandgap semiconductors, continues to reveal new horizons for electronic devices, advancements in traditional semiconductors such as silicon (Si) and germanium (Ge) remain crucial for current and emerging technologies. These advancements, in conjunction with sophisticated modeling, simulation, and fabrication techniques, are paving the way for remarkable innovations, not only in materials and devices, but also in circuits and systems, thus enriching the landscape of semiconductor research.

This Special Issue, titled “Latest Advancements in Semiconductor Materials, Devices, and Systems, 2nd Edition”, aims to create a comprehensive platform for researchers to share their state-of-the-art results. We welcome contributions in the form of research papers, communications, and review articles that shed light on contemporary developments in both traditional and next-generation semiconductors and their integration into innovative devices, circuits, and systems.

We cordially invite submissions on a wide array of topics, including, but not limited to, the following:

  1. Novel device structures, processes, and models;
  2. Material synthesis, characterizations, and heterojunctions involving Si, Ge, GaAs, layered transition metal chalcogenides, graphene, black phosphorus, III-V, SiC, ZnO, Ga2O3, diamond, and others;
  3. Numerical studies and simulations exploring the behavior and application of both traditional and advanced semiconductors;
  4. Innovative circuit designs and system-level integrations;
  5. Machine learning applications in optimizing semiconductor functionalities;
  6. Advanced computing paradigms (neural computing, in-memory computing, and quantum computing) enabled by modern semiconductor technologies.

This Special Issue will serve as an exciting springboard for disseminating pioneering work and fostering discussions that will guide future directions of study in the field of semiconductors. We eagerly anticipate your valuable submissions and look forward to an enlightening discourse on the latest advancements encompassing semiconductor materials, devices, circuits, and systems.

Dr. Zeheng Wang
Dr. Jing-Kai Huang
Dr. Jun Cao
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • semiconductors
  • fabrication
  • simulation
  • circuits
  • systems
  • machine learning

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Published Papers (1 paper)

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Research

10 pages, 4829 KiB  
Article
X-Ray Performance of SiC NPN Radiation Detector
by Jing Wang, Leidang Zhou, Liang Chen, Silong Zhang, Fangbao Wang, Tingting Fan, Zhuo Chen, Song Bai and Xiaoping Ouyang
Micromachines 2025, 16(1), 2; https://doi.org/10.3390/mi16010002 - 24 Dec 2024
Viewed by 232
Abstract
In this paper, a silicon carbide (SiC) phototransistor based on an open-base structure was fabricated and used as a radiation detector. In contrast to the exposed and thin sensitive region of traditional photo detectors, the sensitive region of the radiation detector was much [...] Read more.
In this paper, a silicon carbide (SiC) phototransistor based on an open-base structure was fabricated and used as a radiation detector. In contrast to the exposed and thin sensitive region of traditional photo detectors, the sensitive region of the radiation detector was much thicker (30 μm), ensuring the high energy deposition of radiation particles. The response properties of the fabricated SiC npn radiation detector were characterized by high-energy X-ray illumination with a maximum X-ray photon energy of 30 keV. The SiC npn detector featured stable and clear response to the X-ray within 0.0766 Gy∙s−1 to 0.766 Gy∙s−1 below 300 V. Due to to the low leakage current of less than 1 nA and the fully depleted sensitive region, the bipolar-transistor-modeled SiC npn detector exhibited a clear common-emitter current gain of 5.85 at 200 V (under 0.383 Gy∙s−1), where the gain increased with bias voltage due to the Early effect and reached 7.55 at 300 V. In addition, the transient response of the SiC npn detector revealed a longer delay time than the SiC diode of the same size, which was associated with the larger effective capacitance of the npn structure. The npn detector with internal gain showed great potential in radiation detection. Full article
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