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Micromachines
Special Issues
New Trends in Semiconductor and Nanophotonic Devices and Their Applications
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New Trends in Semiconductor and Nanophotonic Devices and Their Applications

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: closed (31 January 2024) | Viewed by 5087

Special Issue Editors

Dr. Yitian Bao

E-Mail Website
Guest Editor
Department of Physics, The University of Hong Kong, Pokfulam 99907, Hong Kong
Interests: photoluminescence; Raman spectroscopy; lasers and LEDs
Dr. Zhicheng Su

E-Mail Website
Guest Editor
School of Electronic Science & Engineering, Southeast University, 2 Sipailou Road, Nanjing 210096, China
Interests: quantum optics and sensors; ultrafast optics; light emitting materials and displays
Dr. Xiangzhou Lao

E-Mail Website
Guest Editor
Department of Cell Biology, Yale School of Medicine, New Haven, CT 06520-8002, USA
Interests: perovskite; photophysics; nanomaterials; LED; solar cells; super-resolution microscopy; single-molecule localization microscopy

Special Issue Information

Dear Colleagues,

Semiconductor and nanophotonic devices are attracting growing attention from academia and industry. Their applications have started several trends in different fields including physics, engineering and materials. Some topics such as 2D material devices and perovskites are already carefully discussed and are about to be applied in industries but may still have more surprising new trends to be discovered. Some topics such as metamaterial and quantum optics are new topics to be explored. There are many methods to research devices or material properties such as Raman spectroscopy and photoluminescence. Temperature, excitation laser power, and excitation laser wavelength may all have an impact on the spectra.

This Special Issue focuses on the new trends in semiconductor and nanophotonic devices and their applications. Any research paper that involves the processing of the nanophotonic device, analysis of material, and modeling of phenomena is welcomed. The novelty of the idea is a crucial characteristic that we are looking for.

Dr. Yitian Bao
Dr. Zhicheng Su
Dr. Xiangzhou Lao
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • 2D material devices
  • metamaterial
  • topological materials
  • perovskite
  • lasers and LEDs
  • Raman spectroscopy
  • photoluminescence
  • quantum optics

Published Papers (4 papers)

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Research

11 pages, 3643 KiB  
Article
Wide Field of View Under-Panel Optical Lens Design for Fingerprint Recognition of Smartphone
by Cheng-Mu Tsai, Sung-Jr Wu, Yi-Chin Fang and Pin Han
Micromachines 2024, 15(3), 386; https://doi.org/10.3390/mi15030386 - 13 Mar 2024
Viewed by 822
Abstract
Fingerprint recognition is a widely used biometric authentication method in LED-backlight smartphones. Due to the increasing demand for full-screen smartphones, under-display fingerprint recognition has become a popular trend. In this paper, we propose a design of an optical fingerprint recognition lens for under-display [...] Read more.
Fingerprint recognition is a widely used biometric authentication method in LED-backlight smartphones. Due to the increasing demand for full-screen smartphones, under-display fingerprint recognition has become a popular trend. In this paper, we propose a design of an optical fingerprint recognition lens for under-display smartphones. The lens is composed of three plastic aspheric lenses, with an effective focal length (EFL) of 0.61 mm, a field of view (FOV) of 126°, and a total track length (TTL) of 2.54 mm. The image quality of the lens meets the target specifications, with MTF over 80% in the center FOV and over 70% in the 0.7 FOV, distortion less than 8% at an image height of 1.0 mm, and relative illumination (RI) greater than 25% at an image height of 1.0 mm. The lens also meets the current industry standards in terms of tolerance sensitivity and Monte Carlo analysis. Full article
(This article belongs to the Special Issue New Trends in Semiconductor and Nanophotonic Devices and Their Applications)
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13 pages, 6945 KiB  
Article
Design and Simulation of InGaN-Based Red Vertical-Cavity Surface-Emitting Lasers
by Tai-Cheng Yu, Wei-Ta Huang, Hsiang-Chen Wang, An-Ping Chiu, Chih-Hsiang Kou, Kuo-Bin Hong, Shu-Wei Chang, Chi-Wai Chow and Hao-Chung Kuo
Micromachines 2024, 15(1), 87; https://doi.org/10.3390/mi15010087 - 30 Dec 2023
Viewed by 1533
Abstract
We propose a highly polarized vertical-cavity surface-emitting laser (VCSEL) consisting of staggered InGaN multiple quantum wells (MQWs), with the resonance cavity and polarization enabled by a bottom nanoporous (NP) n-GaN distributed Bragg reflectors (DBRs), and top TiO2 high-index contrast gratings (HCGs). Optoelectronic [...] Read more.
We propose a highly polarized vertical-cavity surface-emitting laser (VCSEL) consisting of staggered InGaN multiple quantum wells (MQWs), with the resonance cavity and polarization enabled by a bottom nanoporous (NP) n-GaN distributed Bragg reflectors (DBRs), and top TiO2 high-index contrast gratings (HCGs). Optoelectronic simulations of the 612 nm VCSEL were systematically and numerically investigated. First, we investigated the influences of the NP DBR and HCG geometries on the optical reflectivity. Our results indicate that when there are more than 17 pairs of NP GaN DBRs with 60% air voids, the reflectance can be higher than 99.7%. Furthermore, the zeroth-order reflectivity decreases rapidly when the HCG’s period exceeds 518 nm. The optimal ratios of width-to-period (52.86 ± 1.5%) and height-to-period (35.35 ± 0.14%) were identified. The staggered MQW design also resulted in a relatively small blue shift of 5.44 nm in the emission wavelength under a high driving current. Lastly, we investigated the cavity mode wavelength and optical threshold gain of the VCSEL with a finite size of HCG. A large threshold gain difference of approximately 67.4–74% between the 0th and 1st order transverse modes can be obtained. The simulation results in this work provide a guideline for designing red VCSELs with high brightness and efficiency. Full article
(This article belongs to the Special Issue New Trends in Semiconductor and Nanophotonic Devices and Their Applications)
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13 pages, 3149 KiB  
Article
Highly Uniform Spherical MoO2-MoO3/Polypyrrole Core-Shell Nanocomposite as an Optoelectronic Photodetector in UV, Vis, and IR Domains
by Asmaa M. Elsayed, Fatemah H. Alkallas, Amira Ben Gouider Trabelsi and Mohamed Rabia
Micromachines 2023, 14(9), 1694; https://doi.org/10.3390/mi14091694 - 30 Aug 2023
Cited by 6 | Viewed by 1118
Abstract
A highly uniform spherical MoO2-MoO3/polypyrrole core-shell nanocomposite has been successfully synthesized as an optoelectronic photon sensing material, capable of detecting light in the UV, Vis, and IR domains. The nanocomposite is prepared through the oxidation of pyrrole using Na [...] Read more.
A highly uniform spherical MoO2-MoO3/polypyrrole core-shell nanocomposite has been successfully synthesized as an optoelectronic photon sensing material, capable of detecting light in the UV, Vis, and IR domains. The nanocomposite is prepared through the oxidation of pyrrole using Na2MoO4, resulting in a uniform spherical morphology that has been confirmed by TEM, theoretical modeling, and SEM analyses. This morphology contributes to its promising optical behavior, characterized by a small bandgap of 1.36 eV. The optoelectronic photosensing capability of the nanocomposite has been evaluated across the UV, Vis, and IR spectra, demonstrating high efficiency. The photoresponsivity R values indicate the ability of the nanocomposite to generate hot electrons in response to incident photons. With an R value of 4.15 mA·W−1 at 440 nm, this optoelectronic device exhibits considerable promise for integration into an advanced technological apparatus. The detection (D) value of 9.30 × 108 Jones at 440 nm further confirms the high sensitivity in the Vis region. The excellent stability of the device can be attributed to the inherent MoO2-MoO3 oxide and Ppy polymer materials. This stability has been demonstrated through reproducibility studies and current-voltage measurements under various optical conditions. The combination of stability, efficiency, and sensitivity makes this optoelectronic device well suited for light sensing applications in both industrial and commercial settings. Its promising performance opens up opportunities for advancements in various fields requiring accurate and reliable light detection. Full article
(This article belongs to the Special Issue New Trends in Semiconductor and Nanophotonic Devices and Their Applications)
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13 pages, 5921 KiB  
Article
A Novel Method to Analyze the Relationship between Thermoelectric Coefficient and Energy Disorder of Any Density of States in an Organic Semiconductor
by Dong Qin, Jiezhi Chen and Nianduan Lu
Micromachines 2023, 14(8), 1509; https://doi.org/10.3390/mi14081509 - 27 Jul 2023
Viewed by 972
Abstract
In this work, a unified method is proposed for analyzing the relationship between the Seebeck coefficient and the energy disorder of organic semiconductors at any multi-parameter density of states (DOS) to study carrier transport in disordered thermoelectric organic semiconductors and the physical meaning [...] Read more.
In this work, a unified method is proposed for analyzing the relationship between the Seebeck coefficient and the energy disorder of organic semiconductors at any multi-parameter density of states (DOS) to study carrier transport in disordered thermoelectric organic semiconductors and the physical meaning of improved DOS parameters. By introducing the Gibbs entropy, a new multi-parameter DOS and traditional Gaussian DOS are used to verify this method, and the simulated result of this method can well fit the experiment data obtained on three organic devices. In particular, the impact of DOS parameters on the Gibbs entropy can also influence the impact of the energy disorder on the Seebeck coefficient. Full article
(This article belongs to the Special Issue New Trends in Semiconductor and Nanophotonic Devices and Their Applications)
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