Recent Advances in Thin-Film Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D:Materials and Processing".

Deadline for manuscript submissions: closed (15 September 2025) | Viewed by 497

Special Issue Editors


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Guest Editor
Department of Semiconductor Engineering, LungHwa University of Science and Technology, Taoyuan, Taiwan
Interests: electronic thin-film device; wide energy gap semiconductor materials; solar cell materials

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Guest Editor
Department of Electronic Engineering, National Changhua University of Education, 2, Shih-Da Rd., Changhua City, Taiwan
Interests: nano-structured materials; optoelectronic materials and devices; surface and material analysis techniques and their novel applications
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Special Issue Information

Dear Colleagues,

Thin-film materials are essential for the future of electronics. The thin-film material process is an environmentally benign technology. A thin film is defined as a low-dimensional material, which is a condensed one-by-one atomic/ molecular/ ionic species of matter. The thickness is typically less than several microns. The functional properties of thin films are governed by both chemical composition and microstructure. Thin-film materials are based on micro/nano structures and its devices have various applications. The classes of materials include silicon, carbon, glasses, polymers (plastics), metals, ceramics, composites, liquid crystals, colloids, semiconductors, and superconductors, as well as magnetic, optical, photonic, optoelectronic, and nanoscale materials. The goal of this Special Issue is to provide a platform for scientists and academicians all over the world to promote, share, and discuss various new issues and developments in the area of thin-film materials and their applications. In this Special Issue, we intend to invite authors to submit original research on thin-film materials and their applications. Potential topics include, but are not limited to, the following:

  • Thin-film materials and devices;
  • Functional properties of thin films on devices;
  • Micro/nano-scaled microstructures of thin films;
  • Thin-film processes.

Dr. Sean Wu
Dr. Tsung-Shine Ko
Guest Editors

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Keywords

  • thin-film materials and devices
  • functional properties of thin films on devices
  • micro/nano-scaled microstructures of thin films
  • thin-film processes

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Published Papers (1 paper)

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Research

11 pages, 600 KB  
Article
Effect of Hafnium-Based Thin Film Thickness on Microstructure and Electrical of Yttrium-Doped Hafnium Oxide Ferroelectric Devices Prepared by Magnetron Sputtering
by Bei Ma, Ke Ma, Xinhui Qin, Yingxue Xi, Jin Zhang, Xinyu Yang, Pengfei Yang and Weiguo Liu
Micromachines 2025, 16(9), 1066; https://doi.org/10.3390/mi16091066 - 21 Sep 2025
Abstract
This study employs reactive magnetron sputtering technology to fabricate TiN/Y-HfO2/TiN multilayer thin film devices using titanium targets and yttrium-doped high-purity hafnium targets. A systematic investigation was conducted to explore the influence of hafnium-based thin film thickness on the structural and electrical [...] Read more.
This study employs reactive magnetron sputtering technology to fabricate TiN/Y-HfO2/TiN multilayer thin film devices using titanium targets and yttrium-doped high-purity hafnium targets. A systematic investigation was conducted to explore the influence of hafnium-based thin film thickness on the structural and electrical properties of TiN/Y-HfO2/TiN thin film devices. Radio frequency magnetron sputtering was utilized to deposit Y-HfO2 films of varying thicknesses on TiN electrodes by controlling deposition time, with a yttrium doping concentration of 8.24 mol.%. The surface morphology and crystal structure of the thin films were characterized using atomic force microscopy (AFM), Raman spectroscopy, X-ray diffraction (XRD). Results indicate that as film thickness increases, surface roughness and Raman peak intensity increase correspondingly, with the tetragonal phase (t) characteristic peak being most prominent at 65 nm. DC magnetron sputtering was employed to deposit TiN top electrodes, resulting in TiN/Y-HfO2/TiN thin film devices. Following rapid thermal annealing at 700 °C, electrical properties were evaluated using a ferroelectric tester. Leakage current density exhibited a decreasing trend with increasing film thickness, while the maximum polarization intensity gradually increased, reaching a maximum of 11.5 μC/cm2 at 120 nm. Full article
(This article belongs to the Special Issue Recent Advances in Thin-Film Devices)
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