Broadband Terahertz Devices and Communication Technologies, 2nd Edition

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A:Physics".

Deadline for manuscript submissions: 30 June 2025 | Viewed by 1752

Special Issue Editors


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Guest Editor
Purple Mountain Laboratories, Southeast University, Nanjing 210096, China
Interests: broadband fiber-wireless integration; photonics-aided millimeter-wave/THz-wave communication; next-generation optical access networks
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College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Interests: broadband THz communications; ultra-fast fiber-optical communications; advanced signal processing; THz sensing
Special Issues, Collections and Topics in MDPI journals

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Guest Editor
School of Information Science and Technology, Fudan University, Shanghai 200433, China
Interests: 6G terahertz technology; p-bit/s optical fiber transmission technology; low-complexity integrated circuit design

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Guest Editor
Pengcheng Laboratory, Shenzhen 518000, China
Interests: THz semiconductor devices; THz photonics; THz communications and sensing

Special Issue Information

Dear Colleagues,

The Recommendation Framework for IMT-2030 (Global 6G Vision) was completed by the International Telecommunication Union (ITU-R) radio communication division in 2023. Multiple frequency ranges will be needed to meet the capacity and coverage requirements and to serve emerging services and bandwidth-consuming Internet applications. The wireless traffic volume is foreseen to be sufficient to match or even surpass wired services by 2030, and the high-precision wireless services will need to be guaranteed with a peak data rate of well beyond 100 Gbit/s, eventually 1 Tbit/s. There has been ongoing academic and industry research and development related to the suitability of mobile broadband systems in frequency bands above 100 GHz. The terahertz band (0.1 THz-10 THz), sandwiched between microwave and optical frequencies, is considered the next breakthrough point to revolutionize communication technology due to its rich spectrum resources. It is recognized as a promising candidate for future rate-greedy applications, such as 6G communications. In the World Radio Communication Conferences 2019, identifying frequency bands in the frequency range 275 GHz–450 GHz was permitted for land-mobile and fixed services applications, with a total spectrum bandwidth of 137 GHz. In May 2024, the ITU-R approved a new Report about the “Technical feasibility of IMT in bands above 100 GHz”, which provides information in bands between 100 GHz and 400 GHz.

Motivated by the potential of terahertz wireless communications, this Special Issue seeks critical technology breakthroughs in terahertz communications. The Special Issue topics include but are not limited to, broadband terahertz devices, terahertz frontend and antenna design, baseband processing for THz links, terahertz propagation and channel modeling, system-level demonstration of terahertz communications, integrated sensing, and communication.

Dr. Jiao Zhang
Dr. Lu Zhang
Dr. Kaihui Wang
Dr. Xiongbin Yu
Guest Editors

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Keywords

  • THz source (electrical, photonic)
  • THz mixer (electrical, photonic)
  • THz modulator (electrical, photonic)
  • THz beam steering (electrical, photonic)
  • THz topological photonics
  • THz amplifier (low-noise, power, traveling wave tube, etc.)
  • passive THz devices (filter, polarizer, antenna, etc.)
  • baseband processing for THz links (transmitter, receiver)
  • THz propagation and channel modeling
  • system-level demonstration of electrical THz communications
  • system-level demonstration of photonic THz communications
  • THz-orbital angular momentum (OAM) communications
  • THz integrated sensing and communication (ISAC)

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Published Papers (2 papers)

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Research

12 pages, 5641 KiB  
Article
A Compact V-Band Temperature Compensation Low-Noise Amplifier in a 130 nm SiGe BiCMOS Process
by Yi Shen, Jiang Luo, Wei Zhao, Jun-Yan Dai and Qiang Cheng
Micromachines 2024, 15(10), 1248; https://doi.org/10.3390/mi15101248 - 11 Oct 2024
Viewed by 739
Abstract
This paper presents a compact V-band low-noise amplifier (LNA) featuring temperature compensation, implemented in a 130 nm SiGe BiCMOS process. A negative temperature coefficient bias circuit generates an adaptive current for temperature compensation, enhancing the LNA’s temperature robustness. A T-type inductive network is [...] Read more.
This paper presents a compact V-band low-noise amplifier (LNA) featuring temperature compensation, implemented in a 130 nm SiGe BiCMOS process. A negative temperature coefficient bias circuit generates an adaptive current for temperature compensation, enhancing the LNA’s temperature robustness. A T-type inductive network is employed to establish two dominant poles at different frequencies, significantly broadening the amplifier’s bandwidth. Over the wide temperature range of −55 °C to 85 °C, the LNA prototype exhibits a gain variation of less than 1.5 dB at test frequencies from 40 GHz to 65 GHz, corresponding to a temperature coefficient of 0.01 dB/°C. At −55 °C, 25 °C, and 85 °C, the measured peak gains are 25.5 dB, 25 dB, and 24.4 dB, respectively, with minimum noise figures (NF) of 3.0 dB, 3.5 dB, and 4.2 dB, and DC power consumptions of 22.3 mW, 27.6 mW, and 34.4 mW. Moreover, the total silicon area of the LNA chip is 0.37 mm2, including all test pads, while the core area is only 0.09 mm2. Full article
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11 pages, 3608 KiB  
Article
A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS Process
by Jianing Hu, Jialong Wan, Yi Shen, Wei Zhao and Jiang Luo
Micromachines 2024, 15(9), 1077; https://doi.org/10.3390/mi15091077 - 26 Aug 2024
Viewed by 745
Abstract
This paper introduces a high-gain wideband power amplifier (PA) designed for V-band applications, operating across 52 to 65 GHz. The proposed PA design employs a combination of techniques, including pole-gain distribution, base-capacitive peaking, and the parallel configuration of multiple small-sized transistors. These strategies [...] Read more.
This paper introduces a high-gain wideband power amplifier (PA) designed for V-band applications, operating across 52 to 65 GHz. The proposed PA design employs a combination of techniques, including pole-gain distribution, base-capacitive peaking, and the parallel configuration of multiple small-sized transistors. These strategies enable significant bandwidth extension while maintaining high gain, substantial output power, and a compact footprint. A two-stage PA using the combination technique was developed and fabricated in a 130 nm SiGe BiCMOS process. The PA prototype achieved a peak gain of 27.3 dB at 64 GHz, with a 3 dB bandwidth exceeding 13 GHz and a fractional bandwidth greater than 22.2%. It delivered a maximum saturated output power of 19.7 dBm and an output 1 dB compression point of 18 dBm. Moreover, the PA chip occupied a total silicon area of 0.57 mm2, including all testing pads with a compact core size of 0.198 mm2. Full article
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