Gallium Nitride-Based Devices

Dear Colleagues,

The escalating demand for high-frequency and high-power operations in power conversion systems is leading the way towards a material that should be able to out-perform conventional Si-based components. Gallium Nitride (GaN) is an III-V group compound that is being merged with pre-existing silicon-based semiconductor technology to speed up its accessibility to large-scale users. GaN-based devices have been growing rapidly and have already shown marked importance in solid-state lighting applications, making them high-power and high-speed, especially in the ultraviolet (UV) range due to their wide and direct bandgap properties. With the increasing need to save energy, GaN is an important semiconductor material that possesses the capability to increase technological requirements quite efficiently. The different polarity/orientations of GaN have resulted in a debate regarding its device applicability. Presently, non-polar GaN-based structures are demonstrating higher efficiencies and a faster switching response in UV optoelectronic devices. However, in polar GaN, N-polar portrays the key characteristics of an efficient photodetection device over Ga-polar devices. More recently, atomically thin GaN has emerged and is potentially suitable for ultracompact electronics and optics. This freshly synthesized two-dimensional (2D) GaN allows for control over light-emitting properties guided by strong quantum confinement. Moreover, 2D GaN materials can also act as possible electrode materials for batteries since they have a very low mass density and are definitely an environmentally friendly alternative that can provide high-storage capacities. This Special Issue creates an opportunity for researchers who are willing to contribute to all of these latest material developments and process advancements in GaN technology in the form of research papers, short communications, and perspectives as well as review articles.

We are looking forward to receiving your submissions!

Regards,
Dr. Neha Aggarwal
Guest Editor

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