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Micromachines
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Advanced Packaging for Microsystem Applications, 2nd Edition
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Advanced Packaging for Microsystem Applications, 2nd Edition

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A：Physics".

Deadline for manuscript submissions: closed (31 January 2024) | Viewed by 11806

Special Issue Editors

Prof. Dr. Wenchao Tian

E-Mail Website
Guest Editor
School of Electro-Mechanical Engineering, Xidian University, Xi’an 710000, China
Interests: MEMS technology; electronic packaging and microassembly technology
Special Issues, Collections and Topics in MDPI journals
Dr. Yongkun Wang

E-Mail Website
Guest Editor
School of Electro-Mechanical Engineering, Xidian University, Xi’an 710000, China
Interests: MEMS technology; electronic packaging and microassembly technology; smart materials
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

In line with the fast-moving trends of microelectronic technology, recent years have seen the optimization of microsystems and their different electronic components towards reduced size, high performance, high frequency, and high reliability. However, significant challenges have arisen in the application of advanced packaging materials and techniques in MEMS/NEMS. For example, complex operating environments can significantly affect mechanical and electrical properties, greatly influencing the reliability of these devices and systems. Consequently, the physical properties, design, and preparation of novel packaging materials and techniques need further study to optimize micro-/nanodevices. The design and manufacturing process can directly affect the reliability, cost, and performance of these products. However, the modeling and simulation of electronic packaging, in lieu of experimentation, can overcome many of these problems.

Accordingly, this Special Issue seeks to showcase research papers and review articles that focus on advanced packaging, materials, microsystems, the reliability of devices and systems, and micro-/nanodevices. Topics of interest might include but are not limited to:

  • Advanced packaging technology;
  • The reliability of devices and systems;
  • Advanced packaging materials;
  • MEMS/NEMS;
  • Microsystems.

Prof. Dr. Wenchao Tian
Dr. Yongkun Wang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • advanced packaging technology
  • MEMS
  • reliability
  • NEMS
  • packaging materials
  • modeling and simulation
  • design and manufacturing process
  • microsystems

Related Special Issues

Published Papers (6 papers)

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Research

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16 pages, 9100 KiB  
Article
Study on the Effect of Cold Deformation and Heat Treatment on the Properties of Cu-Ag Alloy Wire
by Xuefeng Wu, Hewei Jia, Junling Fan, Jun Cao and Chenghao Su
Micromachines 2023, 14(8), 1635; https://doi.org/10.3390/mi14081635 - 19 Aug 2023
Viewed by 1059
Abstract
The effects of various drawing parameters and annealing processes on the structure and properties of Cu-Ag wires, containing 1 wt% silver, were investigated using specialized equipment including fine wire-drawing machines, very fine wire-drawing machines, heat treatment equipment, tensile testing machines, microcomputer-controlled electronic universal [...] Read more.
The effects of various drawing parameters and annealing processes on the structure and properties of Cu-Ag wires, containing 1 wt% silver, were investigated using specialized equipment including fine wire-drawing machines, very fine wire-drawing machines, heat treatment equipment, tensile testing machines, microcomputer-controlled electronic universal testers, resistance testers, and scanning electron microscopes. The results revealed that continuous drawing of Cu-1%Ag alloy wires led to elongation of the grains, resulting in a uniform and tightly fibrous microstructure. Moreover, the tensile strength of the alloy wire increased from 670 MPa to 783.9 MPa after a single pass with a deformation of 14%. Subsequently, when the wire was drawn at a speed of 500 m/min, the tensile strength further increased to 820.1 MPa. After annealing the Փ0.08 mm Cu-1% Ag alloy wire, an increase in annealing temperature up to 500 °C resulted in the wire’s tensile strength decreasing from 820.1 MPa to 377.5 MPa. Simultaneously, the elongation increased from 1.94% to 15.21%, and the resistivity decreased from 1.931 × 10−8 Ω·m to 1.723 × 10−8 Ω·m. Additionally, when annealing was conducted at a rate of 80 m/min, the wire resistivity dropped to 1.635 × 10−8 Ω·m. Full article
(This article belongs to the Special Issue Advanced Packaging for Microsystem Applications, 2nd Edition)
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24 pages, 15728 KiB  
Article
Analysis of the Thermally Induced Packaging Effects on the Frequency Drift of Micro-Electromechanical System Resonant Accelerometer
by Xiaorui Bie, Xingyin Xiong, Zheng Wang, Wuhao Yang, Zhitian Li and Xudong Zou
Micromachines 2023, 14(8), 1556; https://doi.org/10.3390/mi14081556 - 3 Aug 2023
Cited by 1 | Viewed by 1185
Abstract
Due to the working principle of MEMS resonant accelerometers, their thermally induced frequency drift is an inevitable practical issue for their extensive application. This paper is focused on reducing the thermally induced packaging effects on the frequency drift. A leadless ceramic chip carrier [...] Read more.
Due to the working principle of MEMS resonant accelerometers, their thermally induced frequency drift is an inevitable practical issue for their extensive application. This paper is focused on reducing the thermally induced packaging effects on the frequency drift. A leadless ceramic chip carrier package with a stress-buffering layer was proposed for a MEMS resonant accelerometer, and the influences of packaging structure parameters on the frequency drift were investigated through finite element simulations and verified experimentally. Because of the thermal mismatch between dissimilar materials, the thermo-mechanical stress within the resonant beam leads to a change in the effective stiffness and causes the frequency drift to decrease linearly with increasing temperature. Furthermore, our investigations reveal that increasing the stress-buffering layer thickness and reducing the solder layer thickness can significantly minimize the thermo-mechanical stress within the resonant beam. As the neutral plane approaches the horizontal symmetry plane of the resonant beam when optimizing the packaging structure, the effects of the compressive and tensile stresses on the effective stiffness of the resonant beam will cancel each other out, which can dramatically reduce the frequency drift. These findings provide guidelines for packaging design through which to improve the temperature stability of MEMS resonant accelerometers. Full article
(This article belongs to the Special Issue Advanced Packaging for Microsystem Applications, 2nd Edition)
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13 pages, 4196 KiB  
Article
Waveform Design Method for Piezoelectric Print-Head Based on Iterative Learning and Equivalent Circuit Model
by Jianjun Wang, Chuqing Xiong, Jin Huang, Ju Peng, Jie Zhang and Pengbing Zhao
Micromachines 2023, 14(4), 768; https://doi.org/10.3390/mi14040768 - 30 Mar 2023
Cited by 4 | Viewed by 1429
Abstract
Piezoelectric print-heads (PPHs) are used with a variety of fluid materials with specific functions. Thus, the volume flow rate of the fluid at the nozzle determines the formation process of droplets, which is used to design the drive waveform of the PPH, control [...] Read more.
Piezoelectric print-heads (PPHs) are used with a variety of fluid materials with specific functions. Thus, the volume flow rate of the fluid at the nozzle determines the formation process of droplets, which is used to design the drive waveform of the PPH, control the volume flow rate at the nozzle, and effectively improve droplet deposition quality. In this study, based on the iterative learning and the equivalent circuit model of the PPHs, we proposed a waveform design method to control the volume flow rate at the nozzle. Experimental results show that the proposed method can accurately control the volume flow of the fluid at the nozzle. To verify the practical application value of the proposed method, we designed two drive waveforms to suppress residual vibration and produce smaller droplets. The results are exceptional, indicating that the proposed method has good practical application value. Full article
(This article belongs to the Special Issue Advanced Packaging for Microsystem Applications, 2nd Edition)
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13 pages, 32349 KiB  
Article
The Study of the Reliability of Complex Components during the Electromigration Process
by Hao Cui, Wenchao Tian, Yiming Zhang and Zhiqiang Chen
Micromachines 2023, 14(3), 499; https://doi.org/10.3390/mi14030499 - 21 Feb 2023
Cited by 3 | Viewed by 1697
Abstract
With the increasing number of inputs and outputs, and the decreasing interconnection spacing, electrical interconnection failures caused by electromigration (EM) have attracted more and more attention. The electromigration reliability and failure mechanism of complex components were studied in this paper. The failure mechanism [...] Read more.
With the increasing number of inputs and outputs, and the decreasing interconnection spacing, electrical interconnection failures caused by electromigration (EM) have attracted more and more attention. The electromigration reliability and failure mechanism of complex components were studied in this paper. The failure mechanism and reliability of complex components during the electromigration process were studied through the simulation and the experiment, which can overcome the limitation of experimental measurement at a micro-scale. The simulation results indicated that the solder joint has obvious current crowding at the current inlet, which will significantly enhance the electromigration effect. Based on the atomic flux divergence method, the void formation of solder joints can be effectively predicted, and life prediction can be more accurate than Black’s equation. Experimental results indicated that the resistance of the daisy chain could be significantly increased with the process of void formation in the solder and corrosion of the leads. Moreover, the growth of intermetallic compounds can be obviously promoted under current stress. The main composition of the intermetallic compounds changes from almost entirely Cu5Sn6 to Cu5Sn6 and Cu3Sn; the cracks can be detected at the Cu3Sn layer. Specifically, the mean time to failure is 1065 h under 1.4 A current and 125 °C based on IPC-9701A guidelines. Full article
(This article belongs to the Special Issue Advanced Packaging for Microsystem Applications, 2nd Edition)
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Review

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17 pages, 6173 KiB  
Review
Copper Wire Bonding: A Review
by Hongliang Zhou, Andong Chang, Junling Fan, Jun Cao, Bin An, Jie Xia, Jingguang Yao, Xiaobin Cui and Yingchong Zhang
Micromachines 2023, 14(8), 1612; https://doi.org/10.3390/mi14081612 - 16 Aug 2023
Cited by 4 | Viewed by 2397
Abstract
This paper provides a comprehensive review on copper (Cu) wire bonding. Firstly, it introduces the common types of Cu wire available in the market, including bare Cu wire, coated Cu wire, insulated Cu wire, and alloyed Cu wire. For each type, their characteristics [...] Read more.
This paper provides a comprehensive review on copper (Cu) wire bonding. Firstly, it introduces the common types of Cu wire available in the market, including bare Cu wire, coated Cu wire, insulated Cu wire, and alloyed Cu wire. For each type, their characteristics and application areas are discussed. Additionally, we provide detailed insights into the impact of Free Air Ball (FAB) morphology on bonding reliability, including its effect on bond strength and formation mechanisms. Next, the reliability of Cu wire bonding is analyzed, with a focus on the impact of intermetallic compounds and corrosion on bonding reliability. Specifically, the formation, growth, and stability of intermetallic compounds at bonding interfaces are discussed, and their effects on bonding strength and reliability are evaluated. The detrimental mechanisms of corrosion on Cu wire bonding and corrosion inhibition methods are also analyzed. Subsequently, the applications of simulation in Cu wire bonding are presented, including finite element analysis and molecular dynamics simulations, which provide important tools for a deeper understanding of the bonding process and failure mechanisms. Finally, the current development status of Cu wire bonding is summarized, and future research directions are discussed. Full article
(This article belongs to the Special Issue Advanced Packaging for Microsystem Applications, 2nd Edition)
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34 pages, 12463 KiB  
Review
Research of Vertical via Based on Silicon, Ceramic and Glass
by Wenchao Tian, Sixian Wu and Wenhua Li
Micromachines 2023, 14(7), 1391; https://doi.org/10.3390/mi14071391 - 8 Jul 2023
Cited by 2 | Viewed by 3264
Abstract
With the increasing demand for high-density integration, low power consumption and high bandwidth, creating more sophisticated interconnection technologies is becoming increasingly crucial. Three-dimensional (3D) integration technology is known as the fourth-generation packaging technology beyond Moore’s Law because of its advantages of low energy [...] Read more.
With the increasing demand for high-density integration, low power consumption and high bandwidth, creating more sophisticated interconnection technologies is becoming increasingly crucial. Three-dimensional (3D) integration technology is known as the fourth-generation packaging technology beyond Moore’s Law because of its advantages of low energy consumption, lightweight and high performance. Through-silicon via (TSV) is considered to be at the core of 3D integration because of its excellent electrical performance, lower power consumption, wider bandwidth, higher density, smaller overall size and lighter weight. Therefore, the particular emphasis of this review is the process flow of TSV technology. Among them, the research status of TSV hole etching, deep hole electroplating filling and chemical mechanical planarization (CMP) in TSV preparation process are introduced in detail. There are a multitude of inevitable defects in the process of TSV processing; thus, the stress problems and electrical characteristics that affect the reliability of TSV are summarized in this review. In addition, the process flow and process optimization status of through ceramic via (TCV) and through glass via (TGV) are discussed. Full article
(This article belongs to the Special Issue Advanced Packaging for Microsystem Applications, 2nd Edition)
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